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The Pearson Question Bank for Electronics and Communication Engineers (PSUs/GATE/IES)
The Pearson Question Bank for Electronics and Communication Engineers (PSUs/GATE/IES)
The Pearson Question Bank for Electronics and Communication Engineers (PSUs/GATE/IES)
The Pearson Question Bank for Electronics and Communication Engineers (PSUs/GATE/IES)
Satish K. Karna
The aim of this publication is to supply information taken from sources believed to be valid and reliable. This is not an attempt to render any type of professional advice or analysis, nor is it to be treated as such. While much care has been taken to ensure the veracity and currency of the informa-tion presented within, neither the publisher, nor its authors bear any responsibility for any damage arising from inadvertent omissions, negligence or inaccuracies (typographical or factual) that may have found their way into this book.
ment 6.21 Measurement of Pressure 6.22 Data Acquisition Systems
Question Bank
Preface
These days more and more objective type questions are being asked in various competitive examinations to test real knowledge of students. Thus, the present day trend of competitive examinations with objective type questions is aimed at evaluating the conceptual and mathematical skills of the examinees. Almost all leading public and private sector organizations are conducting such tests for the recruitment of engineer trainees as well as management trainees. With large number of candidates appearing in such tests every year, the competition has become tough. Therefore, for success in such tests, one must be familiar with the style of questions generally asked, and practice solving these questions and get the correct answer.
There are basically Three Levels of Multiple Choice Questions that are asked.
Level 1 that needs the concept, basic knowledge and implementation of technical skills very quickly. In such case, the number of ques-
Level 1 and 2 type questions need the concept, basic knowledge with the numerical skills to solve the problems in short time. The num-
Level 2 and 3 type questions need the concept, basic knowledge with the mathematical skills to solve the problems in short time. The
JTO and DRDO examinations fall.
To develop this book, we have consulted a number of students who different examinations previously. We have collected the memory based questions and analyzed the pattern. We have put full effort to make this book useful for students/engineers.
There are number of books available in markets which contain large number of questions and answers. We have developed a book which contains thousands of questions and answers with the detailed solutions. This will be help the students to correct the fundaments and apply to the similar problems that they may face in competitive examinations.
This book consists of thirteen chapters namely, Materials and Components, Physical Electronics, Electron Devices and ICs, Signals and System, Network Theory, Electromagnetic Theory, Electronic Measurements and Instrumentation, Analog Electronic Circuits, Digital Electronic Circuits, Control Systems, Communication Systems, Microwave Engineering and Computer Engineering. Bibliography given at the end of the text aims to stimulate the readers to go in for further reading to seek in-depth knowledge.
roll in selection.
appreciated.
Satish K. Karna
Acknowledgements
This book would be incomplete without expressing our gratitude to those wonderful people who provided real inspiraration, motiva-
We are grateful to these people for their support in solving the problems and developing the book:
Mrs. Manmeet Kaur, M.E (Electrical, Power System)
Mr. Pravin Kumar, M.E (Instrumentation and control)
Miss. Suman, M.E (Electrical, Power System)
Mr. Divesh Kumar, M.E (Electrical, Power System)
Mrs. Ritula Thakaur, M.E (Electrical, Power System)
Mr. Hitendar singh Pawar, M.E (Microelectronics)
Our students:
Mrs Rina, B.E (Electronics and Instrumentation)
Mr. Rajneesh Kumar, B.E (Electrical)
Mr.Prateek Srivastava, B.E (Electronics and Intrumentation)
Rohil Khanna, B.E (Electronics and Intrumentation)
Mr.Ravi Verma, B.E (Electronics and intimidation)
Mr. Gautam Khera, B.E (Electrical)
Mr. Inderpreet Singh, B.E (Electrical)
The Pearson Team
Karamjeet Singh Khosa, Assistant Editor, Pearson
Bhupesh Sharma, Associate Editor, Pearson
We owe a debt of gratitude to Mayank and Nilophar for their patience and understanding. I am thankful to Mr. Mukesh Kumar
Satish K. Karna
DRDO: Syllabus for Electronics and Communication Engineering
NETWORKS
Network graphs: matrices associated with graphs; incidence, fundamental cut set and fundamental circuit matrices. Solution methods: nodal and mesh analysis. Network theorems: superposition, Thevenin and Norton’s maximum power transfer, Wye-Delta transformation.
driving point and transfer functions. State equations for networks.
ELECTRONIC DEVICES
p-I-n and avalanche photo diode, Basics of LASERs. Device technology: integrated circuits fabrication process, oxidation, diffusion, ion
ANALOG CIRCUITS
DIGITAL CIRCUITS
programming, memory and I/O interfacing.
cascade structure, frequency response, group delay, phase delay. Signal transmission through LTI systems.
CONTROL SYSTEMS
Basic control system components; block diagrammatic description, reduction of block diagrams. Open loop and closed loop (feedback)
and steady state analysis of LTI control systems and frequency response. Tools and techniques for LTI control system analysis: root of Proportional-Integral-Derivative (PID) control. State variable representation and solution of state equation of LTI control systems.
COMMUNICATIONS
Random signals and noise: probability, random variables, probability density function, autocorrelation, power spectral density. Analog communication systems: amplitude and angle modulation and demodulation systems, spectral analysis of these operations, superheterodyne receivers; elements of hardware, realizations of analog communication systems; signal-to-noise ratio (SNR) calculations for
ELECTROMAGNETICS
Elements of vector calculus: divergence and curl; Gauss’ and Stokes’ theorems, Maxwell’s equations: differential and integral forms. skin depth. Transmission lines: characteristic impedance; impedance transformation; Smith chart; impedance matching; S parameters, pulse excitation. Waveguides: modes in rectangular waveguides; boundary conditions; cut-off frequencies; dispersion relations. Basics
Gate EC - Electronics and Communication Engineering
ENGINEERING MATHEMATICS
Linear Algebra: Matrix Algebra, Systems of linear equations, Eigen values and eigen vectors.
Calculus:
Stokes, Gauss and Green’s theorems.
Differential equations: and variable separable method.
Complex variables: solution integrals.
Probability and Statistics:regression analysis.
Numerical Methods: Solutions of non-linear algebraic equations, single and multi-step methods for differential equations.
Transform Theory:
ELECTRONICS AND COMMUNICATION ENGINEERING
Networks: Network graphs: matrices associated with graphs; incidence, fundamental cut set and fundamental circuit matrices. Solution methods: nodal and mesh analysis. Network theorems: superposition, Thevenin and Norton’s maximum power transfer, Wye-Delta
parameters: driving point and transfer functions. State equations for networks.
Electronic Devices:
Analog Circuits:
Digital circuits:
tecture, programming, memory and I/O interfacing.
Signals and Systems:
nitions and properties; causality, stability, impulse response, convolution, poles and zeros, parallel and cascade structure, frequency response, group delay, phase delay. Signal transmission through LTI systems.
Control Systems: Basic control system components; block diagrammatic description, reduction of block diagrams. Open loop andtions of systems; transient and steady state analysis of LTI control systems and frequency response. Tools and techniques for LTI control compensation, elements of Proportional-Integral-Derivative (PID) control. State variable representation and solution of state equation of LTI control systems.
Communications: Random signals and noise: probability, random variables, probability density function, autocorrelation, power spectral density. Analog communication systems: amplitude and angle modulation and demodulation systems, spectral analysis of these operations, superheterodyne receivers; elements of hardware, realizations of analog communication systems; signal-to-noise ratio (SNR)
Electromagnetics: Elements of vector calculus: divergence and curl; Gauss’ and Stokes’ theorems, Maxwell’s equations: differential and group velocity; skin depth. Transmission lines: characteristic impedance; impedance transformation; Smith chart; impedance matching; S parameters, pulse excitation. Waveguides: modes in rectangular waveguides; boundary conditions; cut-off frequencies; disperantenna gain.
Electronics and Telecommunication Engineering Paper-I
1. Materials and Components -
2. Physical Electronics, Electron Devices and ICs
3. Signals and Systems
4. Network Theory
Network analysis techniques; Network theorems, transient response, steady state sinusoidal response; Network graphs and their ports, analysis of common two ports. Network functions: parts of network functions, obtaining a network function from a given part.
5. Electromagnetic Theory
Maxwell’s equations; application to wave propagation in bounded and unbounded media; Transmission lines: basic theory, standing waves, matching applications, microstrip lines; Basics of wave guides and resonators; Elements of antenna theory.
6. Electronic Measurements and instrumentation
Basic concepts, standards and error analysis; Measurements of basic electrical quantities and parameters; Electronic measuring instruments and their principles of working: analog and digital, comparison, characteristics, application. Transducers; Electronic measurements of non electrical quantities like temperature, pressure, humidity etc; basics of telemetry for industrial use.
Electronics and Telecommunication Engineering Paper-II
(For Both Objective and Conventional Type Papers)
1. Analog Electronic Circuits Pulse shaping circuits and waveform generators.
2. Digital Electronic Circuits
3. Control Systems
4. Communication Systems
5. Microwave Engineering
6. Computer Engineering
processor Based system design: typical examples. Personal computers and their typical uses.
JTO: Syllabus: Telecommunication Engineering
SECTION–I
1. Materials and components
2. Physical Electronics, Electron Devices and Ics
3. Network theory
Network analysis techniques: Network theorem, transient and steady state sinusoidal response, and Transmission criteria: delay and rise
4. Electromagnetic Theory
Transmission lines: basic theory, standing waves, matching applications, micro strip lines; Basics of waveguides and resonators; Elements of antenna theory.
5. Electronic Measurements and Instrumentation
Basic concepts, standards and error analysis; Measurements of basic electrical quantities and parameters; Electronic measuring instruments and their principles of working: analog and digital, comparison, characteristics, and applications. Transducers; Electronic measurements of non-electrical quantities like temperature, pressure, humidity etc. Basics of telemetry for industrial use.
6. Power Electronics
Inverters: Single-phase and 3-phase. Pulse width modulation. Sinusoidal modulation with uniform sampling. Switched mode power supplies.
SECTION-II
1. Analog Electronic Circuits
plications. Pulse shaping circuits and waveform generators.
2. Digital Electronic Circuits
3. Control Systems
4. Communication Systems
5. Microwave Engineering
6. Computer Engineering
tion. Personal computers and their typical uses.
7. Microprocessors
Microprocessor architecture - Instruction set and simple assembly language programming. Interfacing for memory and I/O. Applications of Microprocessors in Telecommunications and power system.
SECTION-III
General Ability Test
be of a nature, which can be answered without special study by an educated person.
About the Author
He has already written many text and reference books for competitive examinations.
1. GATE: Electronics and Communication Engineering by Satish K. Karna
2. GATE: Electrical Engineering by Satish K. Karna and Suman
3. GATE: Instrumentation Engineering by Satish K. Karna and Ravi Verma
4. Communication Systems (Theory / probllems and solution / MCQs) by Satish K. Karna
5. Control Systems (Theory / probllems and solution / MCQs) by Satish K. Karna
6. BSNL JTO: Question Bank with Detailed Solutions by Satish K. Karna
7. MTNL JTO: Question Bank with Detailed Solutions by Satish K. Karna
8. Electronics and communication for competitions by Satish K.Karna
9. Electrical for competitions by Satish K.Karna
10. Instrumentation for competitions by Satish K. Karna and Ravi Verma (in Press)
11. MCQ in Electronics and communication by Satish K.Karna (in Press)
12. MCQ in Electrical Engineering by Satish K. Karna (in Press)
13. GATE: Computer Science and IT by Satish K. Karna and Deepak (in Press)
PROPOSED BOOKS
(Theory / probllems and solution / MCQs) by Satish K. Karna
2. Analog Electronics (Theory / probllems and solution / MCQs) by Satish K. Karna
3. Signal and Systems (Theory / probllems and solution / MCQs) by Satish K. Karna
4. Digital Electronics (Theory / probllems and solution / MCQs) by Satish K. Karna
MATERIALS AND COMPONENTS
1.1 STRUC TURE AND PROPERTIES OF ELECTRICAL ENGINEERING MATERIALS
Electronic Energies in an Atom of an Element
The electron bound to the nucleus of an atom can exist only in E n).
According to Bohr’s theory of the atom
As n n E
ber ,,1 nlm and s m
Principal quantum number n
1,2,3,0(); n ls 2(),3()...,(1). dfn
Azimuthal or Angular momentum quantum number l)
0,1,1ln Magnetic quantum number ml
0,1,2,; l ml … 2 s l m
Spin quantum number m s 11 , 22 s m
Crystal
form an array in space. This array of points is called a Crystal lattice crystalline solid and is called the lattice constant d of the crystal.
Principles of Electron Energy Bands
exclusion principle is not violated for electrons of the similar atoms in crystalline solid. These energy levels are situated together very closely and
Electron Energy Band Scheme and
Forbidden
Bands
trons across the crystal lattice.bands. band.
tance is less depending on the crystal lattice structure. enables us to account for three distinct groups of crystalline
3. Semiconductors
Fig. 1.1
Zone Model and Brillouin Zones
(Wave-Mechanics Model of Band Theory)
line solid come across crystal lattice of the ions. The travelling electrons across the crystal lattice undergo diffraction effects in positive ions of crystal atoms and valence-core electron cloud re(/) hmv can be diffracted 2sin.nd Wave number
The result indicates that there is at least one series of values of K corresponding to integer n and do not pass freely through the crystal. This statement should K correspond to the forbidden energies in the band structures. n-type
As or P of V group. The 5th electron of As or P in the host crystal process since effective energy gap [0.1/10]eV0.01eV D E 1eV g E n-type conductivity is [1/0.10]100 rapidly.
1 100 D EE ; 2
n
p-type or p-type) is 0.01eV g E just above the valence band.
But this is an extra charge carrier and hence A increases as compared to iA again depends on temperature as per the 0.01
Gallium Arsenide Versus Silicon
Gallium Arsenide and other compound semiconductors number of valence electrons per atom compared to silicon. the nearest neighbours is heteropolar compounds the bond is still more or less covalent. The compound semiconductors offer a variety of choices to
Gallium Arsenide technology is the most developed compound semiconductor technology till date. Silicon and germanium are indirect gap semiconductors. Gallium arsenide and related compounds have several other advantages compared to silicon. The effective mass of gamma) minimum point is smaller than in X or L. This leads to higher electrons velocity.
high speed application.
direct gap semiconductor can be used to generate and detect both incoherent and coher-
in opto-electronics. The Gallium arsenide and Aluminum electrons in a direct gap semiconductor such as Gallium radiation recombine faster as compared to electron-hole pair environment.
Temperature Dependence of Materials
Conductors (Metal) 2 *1 m Ne
The reciprocal of relaxation time 1 represents the probability of electron suffering a scatting per unit time. Thus if 104 collisions in one excitation. defects).
111 phimp
There are many free electrons in the crystal structure of a hence are free to move about.
Ohm’s Law IVR . 112 r RVSL
The thermal conductivity K is also high for metals. The ratio K metals for a given temperature T. K K TL the rise in temperature of the metallic-conductor.
01 t RRat ; 11 t R given later.
Thermoionic emission of electrons from metals and Photoelectric emission of electrons from metals give a practical good thermal and electrical conductivities for metal.
Thermistor
Thermistors are made from sintered mixtures of NO, i 23 MnO, 23COO temperature increase.dR dt] and are called sensistors. They are also used as circuit elements.
Semiconductor drift and can be described in terms of E vv e nev
But the conductivity
Insulators
1.2
CONDUCTORS
Ohm’s Law for Metals velocity of electrons and larger are the electrons crossing unit area per second IVR .
Collision Time
collisions of an electron in a conductor.
Relaxation Time
the electron gas can be explained through relaxation time. The collisions are caused by thermal or structure imperfection in the lattice. The relaxation time is introduced as the characteristic time 0. x v its ends.
t of electron for 0 t is given by ()(0). rr t dd vtve
Note: time.
Mean Free Path
velocity and mean free path at Fermi level
mean free path FFc v and the probability that an e moves ().
Note: the metal.
Factors Affecting the Resistivity of Metal
Temperature: The resistivity of conducting materials increases T and it is given by
2
Factors Affecting Conducting Property of the Conducting Materials
The resistivity of conducting materials according to Mathissen’s rule is given by thr
Note:
Alloying: The alloys have less regular structure than pure metals. So the electrical conductivity of alloys is lesser than pure metals.
S Atomic per cent of impurity
Cold working:
Age hardening: increases.
Materials
Semiconductor
16110mho m
2110mho m
8110mho m
Conductivity of Pure Metals
ne as temperature increases of electrons decreases conductivity.
Note: At high temperature
Increasing Order of Conductivity of Few Materials
The Conductivity of Alloys
becomes periodic and this leads to carrier scattering and increases the overall resistance of metal.
Nordheim’s rule
alloy1xx constant x fractional part of impurity in metal. When x 11 x alloy r x
Matheson’s Rule for Specific Resistivity is the sum T r caused by impurities and structural impurities therefore Tr 1. e r r exists even at absolute
THres TH Thermal component : res x increases as the nickel content of the alloy increases. is gener-
Relation Between Temperature Coefficient of Alloys and Pure Metals
metal
alloy1 TH ; alloymetal
Different Types of Electron Emission From Metals and Metallic Compounds
To cause direct emission of electrons from metals and metallic free electrons contained in solid metals.
Thermion Emission
2 bT x jATe
indirect heating of metallic oxide coating ring around the heated thermoionic 012 vv hheV 2 mv
Photoelectric Emission 2 0 1 2 r hvhveVmv
hvhc l 0V 0,vv ergy KE mv2 and v retarding reduce the KE
Secondary Emission
Secondary emission of electrons is caused by bombardment of metallic plate by high energy electrons that strike the metallic surface. The bombarding particles transfer their energy to the electrons contained in metallic state.
Field Emissionsion. There is appreciable increase in emission current from Schottky effect
0.44 E T s IIe
1.3
SEMICONDUCTORS
Intrinsic Semiconductors
Semiconducting materials are comparatively poor conductors of 1.5eV g E energy band theory in earlier section.
The thermal energy can promote electrons to conduction band after breaking covalent bonds as in the case of Germanium vacant electronic-state serve as charge carriers by drifting process caused by applied
Both conduction electrons and holes serve as charge carriers intrinsically in the case of pure semiconducting materials like Ge and Si.
The electrical resistivity p T according to the relation.
