• The "Global CVD Silicon Carbide Market" size was valued at US$ 892.4 million in 2024 and is projected to reach US$ 1.67 billion by 2030, at a CAGR of 11.0% during the forecast period 2024-2030.
• The "United States CVD Silicon Carbide Market" size was valued at US$ 234.5 million in 2024 and is projected to reach US$ 423.4 million by 2030, at a CAGR of 10.4% during the forecast period 2024-2030.
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• Chemical Vapor Deposition (CVD) of Silicon Carbide (SiC) is a process used to create high-quality SiC coatings or thin films on various substrates. It involves the chemical reaction of gaseous precursors, typically silane (SiH₄) and methane (CH₄), under high temperature and low pressure, which results in the deposition of SiC onto a surface. This technique is widely used in semiconductor manufacturing, aerospace, and power electronics due to the material's exceptional thermal conductivity, hardness, and resistance to high temperatures and radiation.
• The global market is expanding rapidly, driven by power electronics and semiconductor demand. In 2023, production reached 1,200 metric tons, with power electronics accounting for 50% of consumption. The market saw a 35% increase in high-purity grade adoption in 2023. Semiconductor grade dominates with a 60% market share, while optical grade is growing at 15% annually. Asia Pacific leads with a 50% market share and is the fastest-growing region at 12.5% CAGR. The industry is focusing on developing larger wafer sizes, with a 45% growth in R&D investments for yield improvement.
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