LPKF Vitrion S 5000 Gen2

Micromachining of Glass by Laser Induced Deep Etching (LIDE) LPKF Vitrion S 5000 Gen2

Application Examples Generation of TGVs and Blind Vias LIDE enables the generation of TGVs and blind vias with an unknown precision and quality. The statistical accuracy of the via positioning by LIDE is 5 µm at a Cp > 1.33. Quality factors such as round­ ness, aspect ratio, and sidewall roughness, are unmatched and provide the perfect prerequisite for downstream processes such as metallization.

10 µm

Dicing before Grinding LIDE’s precise control in the position and depth of high aspect-ratio dice lines, precisely aligned to the substrate wafer, ensures a perfect align­ ment of the package. Smooth sidewalls and defect-free structures guarantee high yield rates in downstream pro­cesses. The combination with TGVs or other features in the same structure, enables electrical connection to the cavity of the package.

200 µm

1 mm

Cavity structures Both open and closed cavities can be precisely generated, in any shape and dimension, with LIDE. Maximum thickness for through cavities is approx.

1 mm, and a depth of 300 µm for closed cavities is possible without issues. Bonding of cavity and capping wafer is possible due to the clean and accurate edges without defects such as material pile up, stresses or microcracks. LIDE also enables the fabrication of TGVs very close to the cavity or even inside of it, for space efficient packaging design. The shape of the cavity can be designed freely with a minimum radius of 5 µm at the edges of the cavity. The high precision of the LIDE technology allows perfect alignment of the package and, therefore, previously impossible high yield during the packaging process.

Laser Induced Deep Etching (LIDE) The LIDE process (Laser Induced Deep Etching) enables fast, precise, and defect-free micro structuring of glass. LIDE represents a new basic technology for the areas of microsystems technology.

Glass as Engineering Material

Besides its unique material properties, the commercial availability of glass in a high variety and high quality for comparably low cost, make it a preferred candidate material for matching cost and supply line requirements of the industry.

10

Failure strength (MPa)

High temperature and chemical stability High strength/weight ratio Homogeneous isotropic material Tunable coefficient of thermal expansion (CTE) Excellent electrical insulator Excellent RF properties

Theoretical strength

10

4

Ins

3

En 102

Pristine, as-drawn

t an St a

du

t an

eou

ss

tic

r an

ce

lim

Pristine, annealed

tre

Fat

it

ng

ig u

th

e

Formed glass Used glass Eff

ect

Damaged glass

101 Inherent flaws 10 0

10 -9

10 -8

Structural flaws 10 -7

Fabri­ cation

Microscopic damage

10 -6

10 -5

Visible damage 10 -4

Flaw size (m) Steel: 500 MPa

Aluminum: 250 MPa

Glass: 10 000 MPa

Flawless structuring of glass with LIDE

10 9 8

CTE (ppm)

The material properties of glass make it an uniquely interesting material for various applications in semiconductor manufacturing such as interposer with various advantages over silicon-based ones, semiconductor packaging applications such as for MEMS, and many others:

7 6 5 4 3 2 1 0

Vendor A

Vendor B

Vendor C

Vendor D

Glasses with different CTE’s are available from different vendors

Glass Structuring with LIDE With LIDE, structures with aspect ratios in the range of 1:10 –1:50 can now be produced in thin glass at a previously unobtainable quality, processing speed and, therefore, cost, making it a highly economical solution for very high volume industries.

holes, cut-outs, cavities, grooves, and other features, can be introduced into the glass sub-strate within the same process step.

In the first step, the glass is patterned locally by elongated laser pulses capable of modifying the whole glass thickness in a single laser pulse. This is done in a direct-write manner without lithography and without removing any glass at this stage, according to the desired layout. In the second process step, while the whole glass surface is wet etched isotropically in a batch process, the laser-modified regions of the glass are removed at a much faster rate than the unmodified ones. In this way, microstructures are created with very high precision and accuracy, completely free of defects, in a highly cost-effective manner.

100 µm

Cross-section view of a glass sheet with a highly dense pattern

With LIDE, a wide variety of structures such as through-holes (or through glass vias, TGV) or blind

of TGVs. The typical hourglass shape is visible. The low sidewall roughness increases the adhesion between the metal and the glass.

After laser modification

After wet etching

After laser modification

After wet etching

Basic principle of LIDE micro structuring of glass. Step1: High frequency laser modification of the glass. Step 2: Accelerated wet-etching of the lasermodified regions. Cut-outs/cavities are formed by patterning modifications close to each other (pitch smaller than diameter) leading to a uniform cutting edge after etching.

Productivity

Thanks to the patented LIDE process, where no material is removed in the laser step, the LPKF Vitrion laser systems enable the glass substrates to be processed with high efficiency and productivity. Up to 3000 TGVs per second can be patterned, depending on the exact design layout. LIDE’s incredibly high productivity enables the use of glass as a core material in large-scale production industries.

Due to nearly inexistent cost for wear parts and consumables, LIDE is highly costefficient, providing a significant economic advantage and a fast return on investment, when compared to other glass processing technologies.

Quality

LIDE offers a new dimension in the accuracy of glass processing. A precision of less than 5 µm is achieved during structuring. The combination of laser modification and wet-chemical etching generates completely defect-free structures since the thermal history of the structure-forming material remains unaffected and stresses in the material can therefore be ruled out. In addition, the generated edges do not offer any starting points for crack formation due to their low rough-ness. These quality features and the free choice of glass type make LIDE particularly interesting for use in the field of semiconductor packaging, MEMS packaging).

100 µm

Low-pitch, high-density TGV array, clearly showing the high positional

Positional measurement of 500 TGVs on a 200 mm wafer (shown:

accuracy and precision, roundness and the defect-free nature of the

deviation from intended position) shows the superior accuracy of the

LIDE process.

LIDE glass processing technology.

LPKF Vitrion S 5000 Gen2 The LPKF Vitrion S 5000 Gen2 system is designed according to the needs of the semiconductor industry and meets all the requirements for cleanliness, safety, and automation. It offers fully automated substrate handling (through the use of a Equipment Front End Module, EFEM), automated laser process monitoring and substrate alignment, as well as the possibility of connecting to MES (Manufacturing Execution System).

The LPKF Vitrion S 5000 Gen2 system allows the processing of 150 mm and 200 mm or 200 mm and 300 mm wafer substrates.

The LPKF Vitrion S 5000 Gen2 comes with the ability to perform the full spectrum of functionality and work packages required to use the LIDE technology to its full potential. This ability allows targeting different applications in semiconductor packaging with un­ matched accuracy, quality and cost efficiency.

LPKF offers industry streamlined support and training for operation of the Vitrion systems, and process development assistance. In addition, as a worldwide laser processing equipment supplier, LPKF supports its customers and installed systems through a strong and highly competent service network ensuring short reaction times and low MTTR as required in the demanding requirements in the semiconductor industry.

www.jenko-sternberg.de

Worldwide Service and Support

2059 mm x 2368 mm x 3445 mm

Pressured air/N2

8 bar

Cooling water

18 °C ± 0.2 °C

Ambient temperature

20 – 25 °C/h ± 0,5 °C/h

Electricity

Three-phase 400 V

Equipment safety

CE, SEMI S2, SEMI S8

Electrical safety

EN 60204

Software automation

OPC UA interface for MES integration, SECS GEM integration available on request

Item

Target requirement

Availability

> 92%

MCBF

200 hrs

Productivity

> 25 wafer/hour (depending on layout)

Clean-room compatibility

ISO 7 or better

Wafer substrate compatibility

150 mm and 200 mm or 200 mm and 300 mm

Glass compatibility

All commercially available glass types

Automation

EFEM with two load ports

Via diameter

25 µm – 200 µm

Aspect-ratio

Up to 40

Via shape

Via shape: straight, hourglass or tapered (depending on size, substrate thickness and glass type)

Surface roughness

< 10 nm

Sidewall roughness

< 300 nm Ra

Via quality

No process induced defects, such as cracks, chipping, stress, etc.

Surface quality

No process induced defects, such as cracks, chipping, stress, etc.

Laser power monitoring

Integrated power meter for measuring the laser power at the substrate level Power meter accuracy < +/- 5%

User interface

Integrated computer with Intel Core i7, 8 GB RAM, Solid State Drive (SSD), LAN and USB connectivity, display with touch support, cleanroom-compatible keyboard and mouse, rugged, maintenance-free touch buttons for system operation

Worldwide (LPKF Headquarters)

Japan

LPKF Laser & Electronics AG Osteriede 7 30827 Garbsen Germany

LPKF Laser & Electronics K.K. Japan

Phone +49 (5131) 7095-0 info@lpkf.com www.lpkf.com

Phone +81 (0) 47 432 5100 info.japan@lpkf.com www.lpkf.com

North / Central America

South Korea

LPKF Laser & Electronics North America

LPKF Laser & Electronics Korea Ltd.

Phone +1 (503) 454-4200 sales@lpkfusa.com www.lpkfusa.com

Phone +82 (31) 689 3660 info.korea@lpkf.com www.lpkf.com

China LPKF Tianjin Co., Ltd. Phone +86 (22) 2378-5318 sales.china@lpkf.com www.lpkf.com

© LPKF Laser & Electronics AG, LPKF reserves the right to modify the specifications and other product information without giving notice. Systems and products supplied by LPKF and its subsidiaries are covered by valid or pending US and other foreign patents. Product names are only used for identification and could be trademarks or registered brand names of the companies involved.

LPKF AG, 10053997-210622-EN

Dimensions

Photos may also show optional accessories.

LPKF Vitrion S 5000