GaN Epitaxial Wafers for Power Devices Market
GaN Epitaxial Wafers for Power Devices Market
Scope: Industry Analysis, Market Size, Growth, Trends Till 2031
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GaN Epitaxial Wafers for Power Devices Market Size and Growth
The GaN Epitaxial Wafers for Power Devices market research report highlights a growing demand for GaN technology in power devices due to its efficiency and high power density capabilities. The market is projected to reach a size of $XXX million by 2027, driven by advancements in power electronics and increasing adoption in telecommunication and automotive industries.
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Companies Covered (Covid 19 Impact Covered)
◍ IVWorks
◍ Mitsubishi Chemical Corporation
◍ EpiGaN
◍ POWDEC K.K.
◍ SCIOCS
◍ Nitride Semiconductors Co.,Ltd
◍ GLC Semiconductor Group
◍ IGSS GaN
◍ Atecom Technology Co., Ltd
The competitive landscape of GaN Epitaxial Wafers for Power Devices Market includes companies like IVWorks, Mitsubishi Chemical Corporation, EpiGaN, POWDEC K.K., SCIOCS, Nitride Semiconductors Co., Ltd, GLC Semiconductor Group, IGSS GaN, Atecom Technology Co., Ltd, Xiamen Powerway Advanced Material Co., Ltd, Dongguan Sino Crystal Semiconductor Co., Ltd, and CorEnergy Semiconductor Co. Ltd. These companies provide high-quality GaN epitaxial wafers for power devices which help in the growth of the market.
- IVWorks: $10 million
- EpiGaN: $15 million
◍ Xiamen Power way Advanced Material Co., Ltd
- Atecom Technology Co., Ltd: $7 million
◍ Dongguan Sino Crystal Semiconductor Co., Ltd
◍ CorEnergy Semiconductor Co. Ltd
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Market Segmentation
By Application
◍ Electric Vehicles
◍ 5G Communications
◍ High-Speed Rails
◍ Radars
◍ Robotics
◍ Others
By Product
◍ 2-Inch Wafer
◍ 4-Inch Wafer
◍ 8-Inch Wafer
◍ 8-Inch and Above Wafer
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$ X Billion USD
Market Growth
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