

Gallium Nitride Power Semiconductor Device Market
Scope: Industry Analysis, Market Size, Growth, Trends Till 2031
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The Gallium Nitride Power Semiconductor Device market is poised for significant growth due to increasing demand for energy-efficient solutions. Valued at approximately $1.2 billion in 2023, the market is projected to expand at a CAGR of 27% over the next five years, driven by advancements in electric vehicles and renewable energy applications.
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◍ Cree (US)
◍ Samsung (South Korea)
◍ Infineon (Germany)
◍ Qorvo (US)
◍ MACOM (US)
◍ Microchip Technology(US)
◍ Analog Devices (US)
◍ Mitsubishi Electric (Japan)
◍ Efficient Power Conversion (US)
◍ GaN Systems (Canada)
◍ Exagan (France)
◍ VisIC Technologies (Israel)
◍ Integra Technologies (US)
◍ Transphorm (US)
◍ Navitas Semiconductor (US)
◍ Nichia (Japan)
◍ Panasonic (Japan)
◍ Texas Instruments (US)
The Gallium Nitride Power Semiconductor Device Market features key players like Cree, Infineon, and Navitas Semiconductor, driving innovations in efficiency and energy density. They support market growth through R&D, partnerships, and expanding applications in electronics. Sales revenues of select firms include:
- Cree: ~$1 billion
- Infineon: ~$10 billion
- Qorvo: ~$1.1 billion
- Microchip Technology: ~$3.5 billion
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Telecommunication
Industrial
Automotive
Renewable ◍ Consumer and Enterprise
◍ Military, Defense and Aerospace
◍ Medical
By
◍ 2 Inch Gallium Nitride Power
Semiconductor Device
4 Inch Gallium Nitride Power
Semiconductor Device
6-Inch and Above Gallium Nitride Power Semiconductor Device
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$ X Billion USD