The paper 'Intermittency, quasiperiodicity and chaos in probe-induced ferroelectric domain switching' by A. V. Ievlev et al. in NATURE PHYSICS, DOI: 10.1038/NPHYS2796 is based on my device. This device - ferroelectric transistor/memristor - was patented in Ukraine seven years ago (#UA76691 'The control method of the electromagnetic flow intensity and amplifying elements on its basis', bulletin #9, 2006, Ukrainian State Patent Office) and developed further in my papers 'CNT and Organic FETs Based Two-Way Transducing of the Neurosignals' (Nanotech 2008 vol. 2, pp. 475-478, www.nsti.org/procs/Nanotech2008v2/6/M81.404, 978-1-4200-8504-4) and 'Analytical Treatment of the Signal Propagation in an EM Transistor/Memristor (EMTM)’, Proceedings of the Second International Workshop on Nonlinear Dynamics and Synchronization (INDS’09), Klagenfurt, Austria, pp. 116-120, 978-3-8322-7943-1); also on pages 1&6 of 'A CNTFET-Based Nanowired Induction Two-Way Transducers' ISRN Nanotechnology, Volume 2012, doi:10.5402/2012/102783