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a ¤ avalanche rugged technology ¤ rugged gate oxide technology ¤ lower input capacitance ¤ improved gate charge ¤ extended safe operating area ¤ lower leakage current: 10ma ( max. 16a, 400v, 0. learn more about ecad model. this n- channel enhancement mode silicon gate power field effect transistor is an advanced power mosfet designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. preview pdf download html irfp350 datasheet ( pdf)vishay siliconix irfp350 datasheet ( html) - vishay siliconix irfp350 product details features • dynamic dv/ dt rating • repetitive avalanche rated • isolated central mounting irfp350 pdf hole • fast switching • ease of paralleling • simple drive requirements. b. irfp350 datasheet : hexfet power mosfet, irfp350 pdf download international rectifier, irfp350 datasheet pdf, pinouts, data sheet, equivalent, schematic, cross reference, obsolete, circuits electronic component search and free download site. 30ohm, id= 16a), alldatasheet, datasheet. . irfp350, sihfp350 vishay siliconix notes a. thermal resistance ratings parameter symbol typ. authorized distributorproducts in stock ready to ship. description: mosfet datasheet: irfp350 datasheet ( pdf) compare product add to project | add notes availability stock: non- stocked, call for quote featured products onsemi no image no image no image no image no image specifications select at least one checkbox above to show similar products in this category. 254w ( typ. the to- 247ac package is preferred for commercial- industrial applications where higher power levels preclude the use of to- 220ab devices. ) to- 3p gate 2.
$ 6. . irfp350, sihfp350 vishay siliconix notes a. buy irfp350 ir, learn more about irfp350 mosfet n- chan 400v 16 amp, view the manufacturer, and stock, and datasheet pdf for the irfp350 at jotrin electronics. ixfh16n50p3- nd. description third generation power mosfets from vishay provide the designer with the best combination of fast switching, ruggedized device design, low on- resistance and costeffectiveness. irfp350 datasheet, irfp350 datasheets, irfp350 pdf, irfp350 integrated circuits : irf - power mosfet( vdss= 400v, rds( on) = 0. irfp350 – n- channel 400 v 16a ( tc) 190w ( tc) through hole to- 247ac
from vishay siliconix. pricing and availability on millions of electronic components from digi- key electronics. download the irfp350 datasheet from vishay. irfp350 datasheet ( pdf) - international rectifier preview pdf download html irfp350 datasheet ( pdf) - international rectifier description power mosfet ( vdss= 400v, rds ( on) = 0. . .
400v single n- channel hexfet power mosfet in a to- 247ac package irfp350 vishay - datasheet pdf & technical specs network sites: . power mosfet irfp350, sihfp350 vishay siliconix features • dynamic dv/ dt rating † repetitive avalanche rated † isolated central mounting hole † fast switching † ease of paralleling † simple drive requirements † lead ( pb) - free available description. pulse width ≤ 300 µs; duty cycle ≤ 2 %. irfp350 datasheet, pdf search partnumber : match& start with " irfp350" - total : 29 ( 1/ 2 page) 1 2 irfp350 distributor gd32f450zet6 distributor more irfp350 manufacturer search partnumber : match& start with " irfp350 " total : 1 ( 1/ 1 page) . drain 3. 24 - ° c/ w. 11). ) @ vds = 400v ¤ low rds( on) : 0. 11). .
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vishay / siliconix customer # : description: mosfet recommended alt 844- irfp350pbf lifecycle: obsolete datasheet: irfp350 datasheet ecad model: download the free library loader to convert this file for your ecad tool. . max. 300ohm, n- channel power mosfet. .
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