Irfp260mpbf features advanced process technology dynamic dv/ dt rating 175° c operating temperature fast switching fully avalanche rated ease of paralleling simple drive requirements lead- free description ir mosfettm technology from infineon utilizes advanced processing techniques to achieve extremely low on- resistance per silicon area. irfp260n hexfet® power mosfet g vdss = 200v rds( on) = 0. irfp260n datasheet( html) 1 page - international rectifier : zoom. description power mosfet ( vdss= 200v, rds ( on) = 0.
maximum drain current vs. irfp260 datasheet, pdf search partnumber : match& start with " irfp260"total : 22 ( 1/ 2 page) 1 2 irfp260 distributor 2951cmc distributor more irfp2 60 manufacturer search partnumber : match& start with " irfp2 60 " total : 11 ( 1/ 1 page) 1 link url. irfp260n datasheet power mosfet ( vdss= 200v, rds ( on) = 0. pdf: download: html: irfp260n datasheet( pdf) 1 page - international rectifier: part no. 99912 of compliance note. typical gate charge vs. 5v v, drain- to- source voltage irfp260n datasheet pdf ( v).
this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with. show similar attributes selected: 0. infineon technologies ag' s irfp260n is trans mosfet n- ch si 200v 50a 3- pin( 3+ tab) to- 247ac tube in the fet transistors, mosfets category. switching time test circuitvds90% 10% datasheet search, datasheets, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs and other semiconductors. 04ohm, id= 50a) irfp260n datasheet ( html) - international rectifier irfp260n product details description fifth generation hexfets from international rectifier utilize advanced processing techniques to achieve extremely low on- resistance per silicon area. typical source- drain diodeforward voltagefig 5. irfp260n datasheet, irfp260n datasheets, irfp260n pdf, irfp260n integrated circuits : irf - power mosfet ( vdss= 200v, rds ( on) = 0. µs pulse width t = 25j ° c top bottom vgs 15v 10v 8. 04ohm, id= 50a) - international rectifier n- channel mosfet transistor, inchange semiconductor company limited irfp260npbf.
ir mosfet™ n- channel power mosfet ; to- 247 package; 40 mohm; the ir mosfet family of power mosfets utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as dc motors, inverters, smps, lighting, load switches as well as battery powered applications. typical capacitance vs. case temperaturefig 10a. gate- to- source voltage1 datasheet search, datasheets, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs and other semiconductors. datasheet pdf what is irfp260n? irfp260n datasheet, irfp260n pdf, irfp260n data sheet, datasheet, data sheet, pdf, international rectifier, 200v single nchannel hexfet power mosfet in a to- 247ac package.
04ω id = 50a description fifth generation hexfets from international rectifier utilize advanced processing techniques to achieve extremely low on- resistance per silicon area. description n- channel mosfet transistor irfp260n datasheet ( html) - inchange semiconductor company limited irfp260n product details • descrition • fast switching • fully avalanche rated • features • static drain- source on- resistance: rds ( on) ≤ 40mω • enhancement mode: • 100% avalanche tested. irfp260n datasheet, irfp260n datasheets, irfp260n pdf, irfp260n integrated circuits : isc - n- channel mosfet transistor, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs and other semiconductors. 04ohm, id= 50a), alldatasheet, datasheet, datasheet search site for
electronic components and semiconductors, integrated circuits, diodes, triacs and other semiconductors. g fs v ds = 10 v; i. the devices are available in a variety of surface mount and throughhole packages. to- 247ac d s s n- channel mosfet available available features dynamic dv/ dt rating repetitive avalanche rated isolated central mounting hole fast switching ease of paralleling simple drive requirements material categorization: for definitions please see www. com, a global distributor of electronics components. check part details, parametric & specs and download pdf datasheet from datasheets. description: mosfet lifecycle: obsolete datasheet: irfp260n datasheet ( pdf) compare product add to project | add notes availability stock: not available featured products infineon view all newest products from infineon irfp260n datasheet pdf specifications select at least one checkbox above to show similar products in this category. irfp260npbf product details.
fifth generation hexfets from international rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. ixys all rights reserved 2 - 2 symbol test conditions characteristic values ( t j = 25° c, unless otherwise specified) min. irfp26n is a 50a 200v n- channel power mosfet that is advanced processing techniques to achieve extremely low on- resistance per silicon area. drain- to- source voltagefig 6.