High current capability: ic= 17a. complement to 2sa1943/ fjl4215. 2sc5200 datasheet ( pdf) - fairchild semiconductor description npn epitaxial silicon transistor 2sc5200 datasheet ( html) - fairchild semiconductor 2sc5200 product details 1. excellent gain linearity for low thd. a for reliable operation. power amplifier applications, 2sc5200 datasheet, 2sc5200 circuit, 2sc5200 data sheet : toshiba, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs and other semiconductors. high frequency : 30mhz. thermal and electrical spice models are available. power amplifier applications • high breakdown voltage: v ceo = 230 v ( min) • complementary to 2sa1943 • suitable for use in 100- w high fidelity audio amplifier’ s output stage. order quality 2sc5200- o and other parts from authorized suppliers. 2sctoshiba transistor silicon npn triple diffused type 2sc5200. high voltage : vceo= 250v wide s. absolute maximum ratings ( t a = 25° c) characteristics. com 2 electrical characteristics 2sc5200 pdf ( note 2) ( tc = 25° c unless otherwise noted) symbol parameter conditions min. product detail 2sc5200 power transistor for high- speed switching applications purchase inquiry parametric search all data sheet application note other prev data sheet 2sc5200 data sheet/ japanese [ jan, ] pdf: 436kb data sheet 2sc5200 data sheet/ english [ jan, ] pdf: 203kb simulation model pspice model [ sep, ] zip: 2kb simulation model. fjl4315, 2sc5200 www. shop confidently for 2sc5200- o from iso9001 and ecia certified suppliers.
high power dissipation : 150watts. features high current capability: ic = 17a. toshiba transistor silicon npn triple diffused type 2sc5200 power amplifier applications unit: mm high breakdown voltage: vceo = 230 v ( min) complementary to 2sa1943 suitable for use in 100- w high fidelity audio amplifier’ s output stage maximum ratings ( tc = 25° c) jedec ■ jeita ■ toshiba 2- 21f1a. unit bvcbo collector base breakdown voltage ic = 5 ma, ie = 0 250 v bvceo collector emitter breakdown voltage ic = 10 ma, rbe = ∞ 250 v bvebo emitter base breakdown voltage ie = 5 ma, ic. high voltage : vceo= 250v 5.