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GaN Power Devic Market Competitive Intelligence and Tracking Report Till 2025

Gallium Nitride Power Device Market research provides industry analysis by type, manufacturer, application along with key factors influencing the growth of the market which include growth drivers, restraints, opportunities and challenges, strategically profile key players and comprehensively analyze their market share and core competencies.

Gallium nitride (GaN) compound is a hard semiconductor material featuring a wide band gap (energy gap) of 3.4 electronvolts (eV) with high heat capacity and thermal conductivity. GaN finds significant applications in power devices used in electrical energy control systems and conversions including telecommunication, industrial, automotive, and high RF antennas and radar in aerospace and defense technologies are expected to provide opportunities for growth of the GaN market over the forecast period.

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Substantial growth of end-use verticals is expected to boost market growth Advancements in technology related to GaN power devices are enhancing the computational power of all systems, in turn boosting market growth. For instance, in December 2017, Yuji Zhao, an electrical and computer expert from Arizona State University received a three year grant of US$ 750,000 from National Aeronautics and Space Administration’s (NASA) Hot Operating Temperature Technology (HOTTech) program for the gallium nitride processor for applications in space.


The recent past has witness high proliferation of electric vehicles and increasing adoption of electrical and electronic components in internal combustion engines for enhanced and convenient control among users. According to Coherent Market Insights, vehicle electrification technologies are expected to witness a CAGR of over 8.8% over the forecast period and be valued at over US$ 120 billion by 2025. According to Coherent Market Insights’ analysis, China and India contribute to around 35% of the global population base. Moreover, largest consumer base for automotive, consumer electronics, communication, and industrial manufacturing will provide the strongest growth prospects over the forecast period.

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Market Dynamics GaN materials include a wide range of features such as wide energy band gap (3.4eV), high heat capacity, thermal conductivity, low device resistance, and ability to operate at transition speeds from on to off and vice versa, are among the prominent benefits, inadvertently driving growth of the GaN power devices market. High conductivity in On state in comparison to alternatives such as silicon substitutes present high opportunity to improve the energy efficiency in power distribution and control systems. However, limited availability and relatively high cost of the material is expected to hinder the overall growth of the market in the near future. Key features of the study: •This report provides in-depth analysis of GaN power devices, market size (US$ Million), and Cumulative Annual Growth Rate (CAGR %) for the forecast period (2017– 2025), considering 2016 as the base year •It elucidates potential revenue opportunity across different segments and explains attractive investment proposition matrices for this market •This study also provides key insights about market drivers, restraints, opportunities, new product launches or approvals, regional outlook, and competitive strategy adopted by the leading players •It profiles leading players in the global GaN power devices market based on the following parameters – company overview, financial performance, product portfolio, geographical presence, GaN power devices market capital, key developments, strategies, and future plans •Companies covered as part of this study include Cree Inc., Efficient Power Conversion (EPC) Corporation, Infineon Technologies, GaN Systems Inc., Macom, Microsemi


Corporation, Mitsubishi Electric Corporation, Navitas Semiconductor, Qorvo, Inc., and Toshiba Electronic Devices & Storage Corporation •Insights from this report would allow marketers and the management authorities of the companies to make informed decisions regarding their future product launches, product upgrades, market expansion, and marketing tactics •The global GaN power devices market report caters to various stakeholders in this industry, including investors, suppliers, manufacturers, distributors, new entrants, and financial analysts •Stakeholders would have ease in decision-making through the various strategy matrices used in analyzing the global GaN power devices market

GaN Power Device Market: Competitive Background Some of the key players in the GaN power devices market are Cree Inc., Efficient Power Conversion (EPC) Corporation, Infineon Technologies, GaN Systems Inc., Macom, Microsemi Corporation, Mitsubishi Electric Corporation, Navitas Semiconductor, Qorvo, Inc., and Toshiba Electronic Devices & Storage Corporation.

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GaN power devic market competitive intelligence and tracking report till 2025  

Gallium nitride (GaN) compound is a hard semiconductor material featuring a wide band gap (energy gap) of 3.4 electronvolts (eV) with high h...

GaN power devic market competitive intelligence and tracking report till 2025  

Gallium nitride (GaN) compound is a hard semiconductor material featuring a wide band gap (energy gap) of 3.4 electronvolts (eV) with high h...

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