Gallium Nitride (GaN) Semiconductor Devices Market, Global Forecast & Analysis (2012 – 2022)
The new report “Gallium Nitride (GaN) Semiconductor Devices (Discretes & ICs) Market, Global Forecast & Analysis (2012 – 2022)” published by MarketsandMarkets (www.marketsandmarkets.com), defines and segments the global GaN Semiconductors market (including both, power semiconductors and optosemiconductors) with analysis and forecasting of the revenues and volumes for the overall market and all its sub-segments. Browse more than 200 market data tables & figures spread through 466 pages and in-depth TOC on “Gallium Nitride (GaN) Semiconductor Devices (Discretes & ICs) Market, Global Forecast & Analysis (2012 – 2022)”. http://www.marketsandmarkets.com/Market-Reports/gallium-nitride-gan-semiconductormaterials-devices-market-698.html Early buyers will receive 10% customization on reports. The specific sub sector of semiconductors & electronics where GaN-based semiconductors & electronics have an edge over normal Si-based counterparts is ”Power Semiconductors & Electronics” and in terms of end-user application sectors (verticals), the two major upcoming sectors facilitating demand for GaN semiconductor devices are Industrial & Power sector and ICT sector. The ICT sector has found use for GaN power discretes, particularly transistors in power amplification, rectification, and high-frequency switching. GaN has turned out to be the choice for most of the power semiconductor applications and is quickly replacing the existing silicon technology. The various properties of GaN such as wider band gap, high break-down voltage, larger critical electric field, and higher thermal conductivity let the GaN devices operate at higher voltages, high switching frequencies, handle higher power density, and offer enhanced power efficiency than the pure Si devices. These properties allow the GaN discretes like Schottky diodes, FETs, HEMTs and the other advanced transistors to operate efficiently at much higher voltage levels, exceeding the limits of counterpart Si devices. GaN power semiconductors also help in reducing the conduction and switching losses, thereby offering higher efficiency in electronic systems. The major application segments of GaN power semiconductors currently are the inverters (& converters), RF devices, power supply modules and motor drives being used across all the end user sectors. For GaN power semiconductor devices, the current market growth is primarily due to penetration in the medium-voltage power electronics market, mainly among medium voltage range (300V to 1KV) applications across all the major end-user verticals. So, it is obvious that most of the market revenue comes from the rising number of advanced -power applications of industrial, power, solar & wind sector and the sector’s development globally. Currently, GaN power devices draw most of their revenue from the ICT sector, as they have been solely focusing on replacing their Si counterparts in various RF power devices, particularly in RF communication applications over the past few years. With respect to features, the GaN devices are much smaller, lighter but tougher and efficient than silicon semiconductor devices and serve as perfect replacements for their silicon counterpart devices which have hit maturity. With additional features offered by GaN in these devices such as low sensitivity to ionizing radiation, better stability in some