Summer03 product news

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Product News TeraScan™ DUV Reticle Inspection System

TeraScan system is the first deep ultraviolet (DUV) reticle inspection tool developed for sub-90-nm IC production. TeraScan combines a new high-speed DUV image acquisition system with KLA-Tencor’s proven Tera™ advanced defect detection algorithms. The DUV image acquisition provides highresolution inspection for advanced reticles, while optimizing signal-to-noise for low false defects, maximizing the capability for fast inspection throughput — and — delivering a significant increase in pattern inspection sensitivity. TeraScan has demonstrated the capability to inspect numerous reticle types, including chrome-on-glass, embedded phase shift, and alternating phase shift, at both 248-nm and 193-nm wavelengths.

AccuFilm in-situ AMC Control Solution

AccuFilm, an option on KLA-Tencor’s SpectraFx 100 film metrology system, enables measurements on advanced, ultra-thin <20Å gate films for the 90-nm node and below. AccuFilm eliminates the effects of airborne molecular contamination (AMC) from gate product wafer measurements by delivering a near instantaneous clean locally in the measurement area. AccuFilm has two components: A single wavelength self-calibrating ellipsometer (SWE), which delivers ultra-stable measurements; and iDesorber, an integrated cleaning source that cleans the measurement site, eliminating AMC, so the SWE can measure it immediately afterwards, within two seconds of clean. AccuFilm cleans and measures in the scribe lines, enabling measurement on product wafers as well as monitor wafers. It significantly shortens time to information, reducing work in process (WIP) risk for the critical gate process, and quickly detects gate thickness and non-uniformity excursions. AccuFilm relieves the pressure on fab wafer flow caused by constraints on queue times before measurement (required in advanced logic fabs) to avoid the effects of AMC on gate dielectric measurement. MPX Focus/Exposure Line Monitor

MPX provides an innovative methodology for monitoring photo excursions of focus and exposure on production wafers, enabling lithographers to meet the new control requirements for stepper defocus and exposure variations in sub-130-nm IC production. With focus error alone accounting for as much as 50 percent of the critical dimension (CD) variation in new processes and devices at 130 nm and below, having the ability to monitor focus-exposure variations inline is critical to maintaining tight CD control at these advanced design rules. MPX, an option on the Archer series advanced overlay metrology systems, capitalizes on the unique dual-tone target capability of separating exposure from focus for more accurate process monitoring while providing real-time focus and exposure metrology. Because of robust high resolution Archer imaging, MPX technology is capable of detecting focus (<50 nm) and dose (<1 percent) deviations on product wafers. Stepper productivity is increased by eliminating the need for test wafer monitoring. 62

Summer 2003

Yield Management Solutions


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