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Surfscan SP1TBI vs. Surfscan 6420: a Performance Comparison by Dale Guidoux, KLA-Tencor
As the semiconductor industry continues to shrink critical design rule dimensions, the need for increased performance from laser-based surface defect inspection tools has intensified. Prior to 0.25 µm geometries, unpatterned wafer inspection uses focused primarily on Particle per Wafer Pass (PWP) measurements. KLA-Tencor’s Surfscan 6420 became an industry standard, based on its particle sensitivity performance on rough films, particularly metal layers. With the implementation of 0.18 µm and 0.13 µm process nodes, there is a need to detect and classify more defect types than just particles. The unique axi-symmetric collection optics and brightfield channels of the Surfscan SP1TBI, coupled with normal incident angle illumination and oblique angle illumination provide superior defect sensitivity and Real Time Defect Classification (RTDC). The tool can be used to differentiate crystal orginated particles or pits (COPs) from particles, classify EPI stacking faults, mounds and dimples, and detect CMP microscratches, chatter marks and slurry residue.
An additional benefit of the axi-symmetric collection optics on the Surfscan SP1TBI is uniform detection of scratches, regardless of orientation. Systems that use non-symmetric collectors can miss important defects such as slip lines and scratches in certain orientations. An increasingly important issue in design rules less than 0.18 µm are the presence of COPs on silicon wafers. The Surfscan SP1TBI is able to detect and classify these COPs separately from surface particles by comparing the defect signal from the wide angle collector with the narrow angle collector signal. Previous generations of Surfscans were not able to differentiate COPs from particles. The ability to classify COPs has two advantages. First, certain device performance can be affected by the presence of COPs. IC manufacturers must add epitaxial layers to overcome this problem. Secondly, when performing tool contamination monitoring with test wafers, it is important to measure just the particles added during a process step, and the presence of COP defects in the total count can give false indications of the actual particle trend.
Surface Nanotopography (SNT) is the newest product feature on the Surfscan SP1TBI. It provides the ability to measure surface features with nanometer height variations across a lateral surface dimension in the 0.5 mm to 20 mm range. A primary application for this feature
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Figure 1. A small deviation in the underlying silicon topography can lead to leakage or breakthrough, and ultimately device failure. Surface height variations can also lead to depth of focus lithography problems in advanced <0.18 µm processes.
Summer 2000
Yield Management Solutions
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