High-k and ALD CVD Metal Precursors Market Analysis, Size, Growth, Share, Outlook & Forecast to 2025
The global high-k and ALD/CVD metal precursors market size is projected to reach USD 789.8 million by 2025 expanding at a CAGR of 8.3% from 2019 to 2025, according to a new report by Grand View Research, Inc. The trend of miniaturization of semiconductor and electronic devices and the need for enhancing their performance are expected to drive the market. Atomic Layer Deposition (ALD) is the subclass of the Chemical Vapor Deposition (CVD) process, which is used to manufacture thin films. The ALD method is used for depositing multi-component thin films by coinjecting precursors, such as Hf and Si, for forming a single layer, homogenous film used in several applications, such as self-aligned patterning, 3D NAND, and FinFET. The ALD process has the ability to create metal, as well as dielectric, films based on the precursor requirements. Insulator materials with high dielectric constant (k) play a vital role in modern semiconductor devices and are used for insulating gates from channels in transistors and decoupling filter capacitor to protect microcircuits from unwanted noise. They are also used in the capacitors that store memory bits in DRAM. Moreover, high-k and ALD/CVD metal precursors play a critical role in Very-Large-Scale Integration (VLSI) technology and in the scaling of semiconductor devices to 10 nm and beyond nodes. High-k insulators are required to maintain the capacitance of smaller semiconductor devices. High-k and ALD/CVD Metal Precursors Market Report Highlights