A Low Power Memory Architecture for Zigbee Trans-Receiver

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GRD Journals | Global Research and Development Journal for Engineering | International Conference on Innovations in Engineering and Technology (ICIET) - 2016 | July 2016

e-ISSN: 2455-5703

A Low Power Memory Architecture for ZigBee Trans-Receiver 1M.

Marudhupandian 2V. Kamalkumar 1 Department of Information and Communication Engineering 2Department of Electrical and Electronics Engineering 1,2 KIT- KalaignarKarunanidhi Institute of Technology, Coimbatore-641 402 Abstract A Low-power memory architecture for Zigbee Trans-Receiver is designed in this project. It proposes a level converting Retention flip-flop (RFF) in dual edge triggered pulse with feedback system in Zigbee SoC’s Trans-receiver. This RFF the master flip flop are hold the data in standby mode and the data will be restored in the slave flip flop in active mode thus reduces the power consumption. Then the data will be passed from the VDD, Coreto and VDD, IO with the help of NMOS passTransistor. This proposed RFF does not require any additional control signals for power and data transitioning. This RFF with dual-edge triggered pulse with feedback system will overcome the problems like high power consumption, large DC current and low performance when compared with existing single-edge triggered RFF. Using 180nm technology the proposed RFF is designed for low power consumption using Tanner EDA Tool. Keyword- I/O supply voltage, Retention Flip flop, Standby leakage current, Standby mode, Level-Conversion, Dual-Edge triggered flip-flop __________________________________________________________________________________________________

I. INTRODUCTION In Recent years, wireless sensor networks have been evolved at an accelerated space. The WSNs to build a Zigbee protocol (10), in which medium access control and physical layer are defined by IEEE 802.15.4 (2) has been generally used, because this protocol has low data rate, low power consumption and long battery life. This features to makes a Zigbee protocol preferred over other technologies like as Wi-Fi and Bluetooth (9). In addition most Zigbee systems-on-chips(SoCs) supports a number of power modes including standby mode that time to maximize the battery life (3) up to 99.09%.Thus, standby power reduction is very important to minimize the power consumption of Zigbee SoCs. The power consumption is more critical mean the leakage current increases exponentially with their threshold voltage ( ). The power returning the standby mode Zigbee SoCs (8) can operates properly, the logic states of hardware calibration, configuration and network information should be preserved before entering the standby mode and also data will betransfer between standby mode and active mode with low power consumption. This RFF are widely used many Zigbee SoCs (8) for storing the data and different types of RFF have been researched. The remainder of this paper is organized as follows. The Existing RFFs is compared with the proposed RFF, and experimental results are presented in Section II. Experimental results of existing and proposed system in section III. Finally conclude and future work with References in Section IV.

II. RETENTION FLIP –FLOPS A. Existing Level-Converting RFF The Existing level-converting RFF is shown in Fig. 2. The RFF is also based on a cross-coupled-inverter latch as the DFF, and an additional data transmission path (M3 and M1). The transistors are used, and the core and retention logic are suppliedby VDD, CoreandVDD, IOrespectively. Level conversionfromthe VDD, Coren in the master latch to the VDD, IO in the slave latch is achieved through an NMOS transistor. The proposed RFF operates as follows (Fig 2). When give the data in the master latch are high and low, respectively, an access transistor M4 (or M3) is turned on andanother access transistor M3 (or M4) is turned off. Then, the ON-state access transistor M4 (M3) forms atransmission path between the master latch and the slave latch but this RFF operates on only single edge triggered clock pulse. In other words, only the transmission path from the master latch to the slave latch is determined on the basis of the state of datainthemaster latch, and the voltage level can be converted in The slave latch without generating a dc-current path because only a low signal is transmitted at all times. Thus theVDD, Coredomain is converted into the VDD, IO domain without the need for an additional level-up converter. Level-down conversion from VDD, IOto VDD, Coreoccurs at INV3 and INV4, which are composed of thick-oxide transistors but supplied by VDD, Corein the standby mode,

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