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Gallium Nitride Semiconductor Device Market May 18, 2021
By Zaraki Kenpachi -
Gallium nitride (GaN) is a semiconductor compound used to make devices that provide high output power with small physical volume, and high e몭ciency at ultrahigh and microwave radio frequencies. Power devices are being optimized since energy saving is becoming a top priority due to the depletion of oil sources and with limited sources of energy. Two major contributors for losses in power devices are conduction losses and switching losses; however, these losses are being minimized using (GaN) gallium nitride devices which possess high breakdown voltage and low conduction resistance characteristics, thus driving its demand. Also, it has led to the growth of gallium nitride semiconductor devices especially for high e몭ciency power supplies in server and other IT equipment and in the rapidly expanding hybrid electric vehicles and electric vehicles. The process of manufacturing gallium nitride semiconductor devices involve growing a GaN crystal or wafer on which transistors and integrated circuits (ICs) can be fabricated. Major players in the global gallium nitride semiconductor device market are: E몭cient Power Conversion (EPC), Macom, Cree, In몭neon, Northrop Grumman Corporation, Qorvo, Panasonic, Microsemi, Mitsubishi Electric, Dialog Semiconductor, Texas Instruments, Epistar, Sumitomo Electric, GaN Systems, Nichia, Samsung, and Exagan among others. Get sample copy of at: https://www.transparencymarketresearch.com/sample/sample.php? 몭ag=S&rep_id=36914 The major driver for growth of the gallium nitride semiconductor device market