MARKET OVERVIEW
Spin-Transfer Torque Random Access
Memory (STT-RAM) is an emerging non-volatile memory technology that stores data using the relative alignment of two ferromagnets in a magnetic tunnel junction (MTJ) stack.
Known for its high speed, scalability, and endurance, STT-RAM is being evaluated as a potential universal memory solution for future computing applications.
MARKET SIZE & GROWTH
• The global Spin-Transfer Torque Random Access Memory Market was valued at 177 million in 2024.
• It is projected to reach US$ 5503 million by 2031.
• The market is expected to grow at a CAGR of 65.0% during the forecast period.
