The global Insulated Gate Bipolar Transistors (IGBTs) Module Market was valued at 3728 million in 2024 and is projected to reach US$ 6059 million by 2032, at a CAGR of 7.4% during the forecast period.
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• The global Insulated Gate Bipolar Transistors (IGBTs) Module Market was valued at 3728 million in 2024 and is projected to reach US$ 6059 million by 2032, at a CAGR of 7.4% during the forecast period.
• Insulated Gate Bipolar Transistors (IGBTs) are composite semiconductor devices that combine the high-efficiency switching of MOSFETs with the high-voltage handling capability of bipolar transistors. These power modules play a critical role in modern power electronics by enabling efficient energy conversion and control across various voltage ranges from below 600V to over 3300V. Key applications span industrial automation, renewable energy systems, electric vehicles, and smart grid infrastructure.
By Type:
• The market is segmented based on voltage rating into:
• Less than 600V
• 600V to 1200V
• 1200V to 1700V
• 1700V to 3300V
• More Than 3300V
• The market is segmented based on application into:
• Industrial
• 4C (Consumer, Computer, Communication, and Control)
• Rail Traction
• Renewables
• Others
• By End U
• Infineon Technologies (Germany)
• Mitsubishi Electric (Japan)
• Fuji Electric (Japan)
• SEMIKRON (Germany)
• Hitachi Power Semiconductor Device (Japan)
• Vincotech (Germany)
• ON Semiconductor (U.S.)
