Published On : 16 Oct 2025
HBM2 DRAM Market size was valued at US$ 2.84 billion in 2024 and is projected to reach US$ 7.12 billion by 2032, at a CAGR of 12.2% during the forecast period 20252032.
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• The global HBM2 DRAM Market size was valued at US$ 2.84 billion in 2024 and is projected to reach US$ 7.12 billion by 2032, at a CAGR of 12.2% during the forecast period 2025-2032.
• HBM2E (High Bandwidth Memory 2E) is an advanced DRAM technology designed for high-performance computing applications. As the second generation of HBM standard, it delivers exceptional bandwidth capabilities up to 460 GB/s per stack, supporting configurations of up to 8 dies per stack with 16GB capacity. This cutting-edge memory solution stacks DRAM dies vertically using throughsilicon vias (TSVs) for unprecedented speed and efficiency.
8 G • 16 G
Subtypes: Standard 16 G and high-bandwidth variants
• Standard HBM2E (307 GB/s) • Enhanced variants • SK Hynix (460 GB/s)
• Samsung (410 GB/s)
• SK Hynix (South Korea)
• Samsung Electronics (South Korea)
• Micron Technology (U.S.)
• Intel Corporation (U.S.)
• ChangXin Memory Technologies (China)
