On : 19 Nov 2025
• Silicon Carbide (SiC) Discrete Product Market size was valued at US$ 2.84 billion in 2024 and is projected to reach US$ 8.16 billion by 2032, at a CAGR of 12.8% during the forecast period 2025-2032
Report Studies
• The global Silicon Carbide (SiC) Discrete Product Market size was valued at US$ 2.84 billion in 2024 and is projected to reach US$ 8.16 billion by 2032, at a CAGR of 12.8% during the forecast period 2025-2032. The market expansion is primarily driven by increasing adoption in electric vehicles (EVs), renewable energy systems, and industrial power applications.
• Silicon Carbide (SiC) Discrete Products are advanced semiconductor devices manufactured using silicon carbide material, offering superior thermal conductivity, high breakdown voltage, and lower energy losses compared to traditional silicon-based components. These products include power diodes, MOSFETs, JFETs, and modules that enable efficient power conversion in hightemperature and high-voltage environments.
By Type:
• Semiconductor diodes
• Subtypes: Schottky diodes, PIN diodes, and others
• Semiconductor triodes
• Subtypes: MOSFETs, JFETs, and others
• Thyristors
• Other discrete products
Key Players
:
• Nvidia Corporation (U.S.)
• Intel Corporation (U.S.)
• Qualcomm Technologies, Inc. (U.S.)
• Huawei Technologies Co., Ltd. (China)
• Arm Limited (U.K.)
• Google LLC (U.S.) – Tensor Processing Units
• AMD (Xilinx) (U.S.) – Adaptive SoCs
• Samsung Electronics (South Korea) – Exynos with NPU
• Ambarella, Inc. (U.S.) – CVfocused edge processors
• Cerebras Systems (U.S.) – Waferscale edge solutions
