GaN High Frequency Devices Market size was valued at US$ 2.45 billion in 2024 and is projected to reach US$ 4.56 billion by 2032, at a CAGR of 9.3% during the forecast period 2025-2032
Report Studies
• The global GaN High Frequency Devices Market size was valued at US$ 2.45 billion in 2024 and is projected to reach US$ 4.56 billion by 2032, at a CAGR of 9.3% during the forecast period 2025-2032.
• Gallium Nitride (GaN) high frequency devices are semiconductor components that enable efficient power conversion and signal amplification at radio frequencies. These devices leverage GaN’s superior material properties – including high electron mobility and thermal stability – to outperform traditional silicon-based solutions in applications requiring high power density and switching speeds. The technology is categorized into low voltage (LV) and high voltage (HV) segments, with LV devices accounting for approximately 62% market share in 2024.
By Type:
• The market is segmented based on type into:
• LV High Frequency Devices
• Subtypes: Discrete GaN transistors, MMIC GaN amplifiers, and others
• HV High Frequency Devices
• Subtypes: Power amplifiers, RF power devices, and others
Power Supply
Electric Vehicle Equipment
Mobile Communications/Satellite Communications • Others
Key Players:
• ROHM Semiconductor (Japan)
• Texas Instruments (U.S.)
• Toshiba Electronic Devices & Storage (Japan)
• GaN Systems (Canada)
• Shindengen Electric Manufacturing (Japan)
• Qorvo (U.S.)
• Wolfspeed (U.S.)
