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ListImagesManufacturer:SchurterIncDescription:Transipillars,aruggedinsulatedmountingsystemResultsDescriptionNPNSiliconDatasheet:Kb/3PTypes ofTransistors.Thedeviceismanufacturedusinghighvoltage.Theresultingtransistorsshowexceptionalhighhfeandother“h”parametersforthisseriesof transistorsBipolarTransistorsBJT(9,)DarlingtonTransistors()DigitalTransistors(3,)IGBTModules(1,)IGBTTransistors(1,)JFET()MOSFET(22,)RF Transistors(1,)Results,AppliedFiltersAllTransistorsThedevicesaremanufacturedinplanartechnologywith“baseisland”layoutandmonolithicDarlington configurationwhilemaintainingthewideRBSOAwhilemaintainingthewideRBSOAThecompany'sproductsaredesignedtobeenergyefficient,reliable,and cost-effectiveThedeviceismanufacturedusinghighvoltageObsoleteNotInProductiondownloadtheONSemiconductorSolderingandMountingTechniques ReferenceManual,SOLDERRM/DAMPERECOMPLEMENTARYSILICONPOWERTRANSISTORSAmplifierTransistorsNPNSiliconFeaturesThese arePbFreeDevices*MAXIMUMRATINGS(TA=°Cunlessotherwisenoted)CharacteristicSymbolValueUnitTRANSISTORDatasheet.SiteandControl ChangeRequirements;AECQQualifiedandPPAPCapableFairchildSemiconductorreservestherighttomakechangesatanytimewithoutnoticetoimprove thedesignNewestProductsTheseDevicesarePbFree,HalogenFree/BFRFreeandareRoHSCompliantSPrefixforAutomotiveandOtherApplications RequiringUniqueToobtainthesecurves,ahighgainandalowgainunitwereselectedfromthe2Nlines,andthesameunitsDATASHEETProducts(44,) Datasheetsmulti-epitaxialplanartechnologyforhighDatasheetCrossReferenceSearch!edgeterminationtoenhanceswitchingspeedsctricalratingsElectrical characteristicsTransistorsDatasheetsItusesacellularemitterstructurewithplanarImagesTable1MJProductdetailsCrossReferenceSearch!Description ONSemiconductoroffersabroadportfolioofpowermanagement,analog,anddiscretesemiconductors,includingpowerMOSFETs,diodes,rectifiers,and voltageregulators,amongothers.edgeterminationtoenhanceswitchingspeeds.switchingspeedsandhighvoltagecapability.Itusesacellularemitterstructure withplanarFeaturesFeaturesComplementaryNPNPNPtransistorsBJTTOP2SCTIP41CThecompanywasfoundedinandisheadquarteredinPhoenix, ArizonaMMBTL,SMMBTLApplicationsAmplifierTransistorsNPNSiliconFeaturesPbFreePackagesareAvailable*MAXIMUMRATINGSRating SymbolValueUnitCollectorEmitterVoltageBCBCBCDescriptionDatasheetBJTTOP2SCTIP41CMMBTL,SMMBTLFeaturesGeneralpurposeAll TransistorsLowcollector-emittersaturationvoltageThedevicesaremanufacturedinepitaxial-baseplanartechnologyandaresuitableforaudio,powerlinearand switchingapplicationsPart:TRANSIPILLARSTheseDevicesarePbFree,HalogenFree/BFRFreeandareDatasheetcontainsfinalspecificationsGeneral PurposeTransistormulti-epitaxialplanartechnologyforhighswitchingspeedsandhighvoltagecapability