SEMICONDUCTOR
MJE13005
TECHNICAL DATA
TRIPLE DIFFUSED NPN TRANSISTOR
SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FLUORESCENT LIGHT BALLASTOR APPLICATION.
F
E
A R S
P
Q
D
B
FEATURES ᴌExcellent Switching Times : ton=0.8Ọ S(Max.), tf=0.9Ọ S(Max.), at IC=2A
T
G
H
ᴌHigh Collector Voltage : VCBO=700V.
L C
M
MAXIMUM RATING (Ta=25ᴱ) RATING
UNIT
VCBO
700
V
Collector-Emitter Voltage
VCEO
400
V
Emitter-Base Voltage
VEBO
9
V
DC
IC
4
Pulse
ICP
8
IB
2
A
PC
75
W
Tj
150
ᴱ
Tstg
-55ᴕ150
ᴱ
Base Current Collector Power Dissipation (Tc=25ᴱ) Junction Temperature Storage Temperature Range
1
2
N
SYMBOL
Collector-Base Voltage
Collector Current
M
K 3
O
CHARACTERISTIC
C
J
1. BASE 2. COLLECTOR (HEAT SINK)
DIM A B C D E F G H J K L M N O P Q R S T
MILLIMETERS 10.30 MAX 15.30 MAX 0.80 _ 0.20 Φ3.60 + 3.00 6.70 MAX _ 0.50 13.60 + 5.60 MAX 1.37 MAX 0.50 1.50 MAX 2.54 4.70 MAX 2.60 1.50 MAX 1.50 _ 0.20 9.50 + _ 0.20 8.00 + 2.90 MAX
3. EMITTER
A
TO-220AB
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC
SYMBOL
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage Collector Output Capacitance
-
-
1
mA
-
36
hFE(2)
VCE=5V, IC=2A
10
-
30
IC=1A, IB=0.2A
-
-
0.5
IC=2A, IB=0.5A
-
-
0.6
IC=4A, IB=1A
-
-
1
IC=1A, IB=0.2A
-
-
1.2
IC=2A, IB=0.5A
-
-
1.6
VCB=10V, f=0.1MHz, IE=0
-
65
-
pF
VCE=10V, IC=0.5A
4
-
-
MHz
-
-
0.8
Ọ S
-
-
4
Ọ S
VCC =125V
-
-
0.9
Ọ S
VCE(sat)
VBE(sat) Cob
ton tstg
OUTPUT 300µS IB1
INPUT IB2
tf
Revision No : 3
UNIT
19
Turn-On Time
1999. 12. 16
MAX.
VCE=5V, IC=1A
fT
Fall Time
TYP.
hFE(1)
Transition Frequency
Storage Time
VEB=9V, IC=0
MIN.
62.5Ω
IEBO
Emitter Cut-off Current
TEST CONDITION
IB1=I B2 =0.4A
DUTY CYCLE < = 2%
I B1 I B2
V
V
1/3