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Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2725DX

GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.

QUICK REFERENCE DATA SYMBOL

PARAMETER

CONDITIONS

VCESM IC ICM Ptot VCEsat ICsat ts

Collector-emitter voltage peak value Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time

VBE = 0 V

PINNING - SOT399 PIN

PIN CONFIGURATION

DESCRIPTION

1

base

2

collector

3

emitter

Ths ≤ 25 ˚C IC = 7.0 A; IB = 1.75 A f = 16 kHz ICsat = 7.0 A; f = 16kHz

case isolated

TYP.

MAX.

UNIT

7.0 5.8

1700 12 30 45 1.0 6.5

V A A W V A µs

SYMBOL

c

case

b Rbe

e

1 2 3

LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL

PARAMETER

CONDITIONS

VCESM IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj

Collector-emitter voltage peak value Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature

VBE = 0 V

average over any 20 ms period Ths ≤ 25 ˚C

MIN.

MAX.

UNIT

-65 -

1700 12 30 12 20 200 9 45 150 150

V A A A A mA A W ˚C ˚C

MIN.

MAX.

UNIT

-

10

kV

ESD LIMITING VALUES SYMBOL

PARAMETER

CONDITIONS

VC

Electrostatic discharge capacitor voltage Human body model (250 pF, 1.5 kΩ)

1 Turn-off current.

August 2002

1

Rev 2.000


Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2725DX

THERMAL RESISTANCES SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

Rth j-hs

Junction to heatsink

without heatsink compound

-

3.7

K/W

Rth j-hs

Junction to heatsink

with heatsink compound

-

2.8

K/W

Rth j-a

Junction to ambient

in free air

35

-

K/W

MIN.

TYP.

MAX.

UNIT

-

-

2500

V

-

22

-

pF

MIN.

TYP.

MAX.

UNIT

-

-

1.0 2.0

mA mA

7.5

110 13.5 70 0.86 1.4 19 5.8

1.0 0.95 2.2 7.8

mA V Ω V V V

TYP.

MAX.

UNIT

5.8 0.6

6.5 0.8

µs µs

ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL

PARAMETER

CONDITIONS

Visol

Repetitive peak voltage from all three terminals to external heatsink

R.H. ≤ 65 % ; clean and dustfree

Cisol

Capacitance from T2 to external f = 1 MHz heatsink

STATIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL

PARAMETER

CONDITIONS 2

ICES ICES

Collector cut-off current

IEBO BVEBO REB VCEsat VBEsat VF hFE hFE

Emitter cut-off current Emitter-base breakdown voltage Base-emitter resistance Collector-emitter saturation voltage Base-emitter saturation voltage Diode forward voltage DC current gain

VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C VEB = 7.5 V; IC = 0 A IB = 1 mA VEB = 7.5 V IC = 7.0 A; IB = 1.75 A IC = 7.0 A; IB = 1.75 A IF = 7 A IC = 1 A; VCE = 5 V IC = 7 A; VCE = 1 V

0.78 3.8

DYNAMIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL

ts tf

PARAMETER

CONDITIONS

Switching times (16 kHz line deflection circuit)

ICsat = 7.0 A; LC = 650 µH; Cfb = 18 nF; VCC = 162 V; IB(end) = 1.5 A; LB = 2 µH; -VBB = 4 V

Turn-off storage time Turn-off fall time

2 Measured with half sine-wave voltage (curve tracer).

August 2002

2

Rev 2.000


Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

ICsat

TRANSISTOR IC

BU2725DX

+ 150 v nominal adjust for ICsat

DIODE t

Lc IBend

IB

t 20us

D.U.T.

26us

LB

IBend

Cfb

64us VCE

-VBB

Rbe

t

Fig.1. Switching times waveforms (16 kHz).

Fig.3. Switching times test circuit.

ICsat

hFE

BU2727D/DF

100

90 %

VCE = 5 V

Ths = 25 C Ths = 85 C

IC

10 % tf

10

t

ts IB IBend

t 1 0.01

- IBM

1

10

100 IC / A

Fig.2. Switching times definitions.

August 2002

0.1

Fig.4. DC current gain. hFE = f (IC) Parameter Ths (Low and high gain)

3

Rev 2.000


Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

100

BU2725DX

hFE

1

VCE = 1 V

VBEsat (V) IC = 6 A

Ths = 25 °C Ths = 85 °C

0.9

0.8

10

Ths = 85 °C Ths = 25 °C

4A 0.7

1 0.01

0.1

1

10

0.6

100 IC (A)

Fig.5. DC current gain. hFE = f (IC) Parameter Ths (Low and high gain)

10

0

1

2

3

IB (A)

4 4

Fig.7. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter IC

ts/tf/ us

VCEsat (V)

BU2527AFX,DFX

10 Ths = 85 °C Ths = 25 °C

9 8

1

7 IC/IB = 12

6 5 IC/IB = 5

4

0.1

3 2 1

0.01 0.1

1

10

IC (A)

0

100

Fig.6. Typical collector-emitter saturation voltage. VCEsat = f (IC); parameter IC/IB

August 2002

0

1

2

3

IB / A

4

Fig.8. Limit storage and fall time. ts = f (IB); tf = f (IB); Ths = 85˚C; f = 16 kHz

4

Rev 2.000


Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

Normalised Power Derating

PD%

120

BU2725DX

VCC

with heatsink compound

110 100 90 80

LC

70 60 50

VCL

IB1

40

LB

30 20

CFB

T.U.T.

-VBB

10 0 0

20

40

60

80 Ths / C

100

120

140

Fig.11. Test Circuit RBSOA. VCC = 150 V; -VBB = 1 - 4 V; LC = 1 mH; VCL = 1500 V; LB = 0.5 - 2 µH; CFB = 1 - 3 nF; IB(end) = 0.8 - 4 A

Fig.9. Normalised power dissipation. PD% = 100⋅PD/PD 25˚C = f (Ths)

10

Zth / (K/W)

BU2525AF

IC / A 35 30

0.5

1

25

0.2 0.1 0.05

0.1

15

PD

0.01 D=0

tp D= T

tp

1E-02 t/s

5

t

T

1E-04

10

0 100

1E+00

1000

1700

VCE / V

Fig.12. Reverse bias safe operating area. Tj ≤ Tjmax

Fig.10. Transient thermal impedance. Zth j-hs = f(t); parameter D = tp/T

August 2002

Area where fails occur

20

0.02

0.001 1E-06

BU2727A/AF/D/DF

5

Rev 2.000


Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2725DX

MECHANICAL DATA Dimensions in mm

5.8 max

16.0 max

Net Mass: 5.88 g

3.0

0.7 4.5 3.3

10.0 27 max

25 25.1 25.7

22.5 max 5.1 2.2 max 18.1 min

4.5 1.1 0.4 M 2 0.95 max 5.45

5.45

3.3

Fig.13. SOT399; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8".

August 2002

6

Rev 2.000


Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2725DX

DEFINITIONS DATA SHEET STATUS DATA SHEET STATUS3

PRODUCT STATUS4

DEFINITIONS

Objective data

Development

This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice

Preliminary data

Qualification

This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product

Product data

Production

This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A

Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. ď›™ Philips Electronics N.V. 2002 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

3 Please consult the most recently issued datasheet before initiating or completing a design. 4 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

August 2002

7

Rev 2.000

Transistor BU2725DX - Manual Sonigate  
Transistor BU2725DX - Manual Sonigate  

QUICK REFERENCE DATA GENERAL DESCRIPTION 3 emitter case isolated ESD LIMITING VALUES LIMITING VALUES b e High voltage, high-speed switching...

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