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Featured Publication
by Protochips
Uncovering Atomic Migrations Behind Magnetic Tunnel Junction Breakdown
Published in ACS Nano
In a collaborative study by researchers at the University of Minnesota and the University of Arizona, this cutting-edge work explores Magnetic Random Access Memory (MRAM) devices using Protochips’ Fusion AX system.
As computing needs continue to expand, there is an increasing demand for more efficient and durable data storage solutions. Spintronic magnetic tunnel junction (MTJ)-based MRAM devices are proving to be a promising alternative to traditional memory, offering the potential for faster and more energy-efficient storage. However, a thorough understanding of these devices’ operating principles and breakdown mechanisms is crucial to their long-term reliability.
By performing in situ electrical biasing experiments within a transmission electron microscope, the authors gained valuable insights into the functioning and failure mechanisms of these advanced data storage devices. The study utilized atomic-resolution STEM to investigate two distinct breakdown processes in MTJ devices. At lower electric currents, “soft breakdown” occurs due to electromigration, creating ultra thin conductive regions within the MgO dielectric layer and along the device edges, leading to reduced resistance. At higher current levels, “complete breakdown” arises from joule heating and further electromigration, causing melting within the MTJ layers at temperatures below the materials’ typical bulk melting points.
These detailed, time-resolved STEM studies provide critical insights into the structural evolution and potential failure points of spintronic devices, increasing understanding of their operational limits and helping guide future developments.
Yun, H. et al. (2024) ACS Nano, 18, 25359–25906.
