Select List of Papers, Patents, and Invited Talks – M.J. Loboda Title
Reference
Notes
Extremely low-noise SAW resonators and oscillators – design and performance ChipScale Packaging with High Reliability for MCM Applications
IEEE Trans. UFFC 35 (6) 657-666 1988 Int'l Jour. of Microcircuits and Electronic Packaging, 19, 1996 J. Vac. Sci. Tech. A 12(1) 90-96 1994 J. Electrochem. Soc. 145 (8) 2861-2886 1998 Microelectronic Eng. 50 (1) 15-23 2000 US Patent 5818071 1998 US Patent 6159871 2000
1988 UFFC/IEEE Transactions Paper of the Year
Proc. Advanced Metallization Conference, ULSI XV, Materials Research Society, 2000, p.371 Appl. Phys. Lett. 63 (24) 3347-3349 1993 US Patent 5465680 1995
Invited paper. Introduction to chemistry of PECVD low dielectric constant films and precursor engineering.
Mater. Res. Soc. Symp. Proc. Vol. 911, p.49 2006 Materials Science Forum 556-557, 145 2007 Materials Science Forum, 645-648, 905 2010 Materials Science Forum, 645-648, 291 2010 First SiC Conference Nagoya, Japan 2011
Invited paper. One of the first papers to explain the benefits of chlorine in the CVD epitaxy of 4H-SiC
US Patent 8860040 2014 US Patent 8940614 2015
Composition for theoretical performance of SiC power devices
Plasma enhanced chemical vapor deposition of a-SiC:H films from organosilicon precursors Properties of a-SiOx:H Thin Films Deposited from Hydrogen Silsesquioxane Resins New solutions for intermetal dielectrics using trimethylsilane-based CVD processes Silicon carbide metal diffusion barrier Method for producing hydrogenated silicon oxycarbide films having low dielectric constant Applications of Organosilicon Gases in Plasma Enhanced Chemical Vapor Deposition of Low-Dielectric Constant Films Growth of 3C-SiC on Si at reduced temperatures by chemical vapor deposition from silacyclobutane Method of forming crystalline silicon carbide coatings Growth of Crystalline Silicon Carbide by CVD Using Chlorosilane Gases Scaling of Chlorosilane SiC CVD to Multiwafer Epitaxy System Correlation between carrier recombination lifetime and forward voltage drop in 4HSiC PiN diodes Characterization of 100 mm Diameter 4HSilicon Carbide Crystals With Extremely Low Basal Plane Dislocation Density Growth of high-quality bulk and epitaxial 4H-SiC for high voltage power device applications High voltage power semiconductor devices on SiC SiC substrate with SiC epitaxial film
Best Paper of Session, IEEE MCM ’96. Hermetic CVD thin film technology for semiconductor devices First paper to demonstrate insulating, low dielectric constant, PECVD a-SiC:H films Paper teaching the materials science of the material for planarization in flash memory fabrication. Invited paper. First paper to introduce organosilane precursors for copper damascene intermetal films First patent on low-k CVD diffusion barriers for Cu damascene interconnections. Most cited patent in the field of CVD of low dielectric constant materials.
First paper to demonstrate growth of 3CSiC on silicon at temperatures below 850 C. One of top cited papers in 3C-SiC technology. Highly cited patent for CVD of 3C-SiC on silicon
First paper to report large scale (10x100 mm) high performance batch CVD epitaxy using chlorosilanes First paper to show statistical correlations between carrier lifetime and SiC PiN diode forward bias operation with new state of the art for Vf and Vf stability. First paper to report growth of large crystals of SiC with ultra low defect density. Invited paper. First report of 10 kV 4H-SiC power devices using ultra low defect density substrates and epitaxy.
Composition for high performance large diameter 4H-SiC epiwafers