Type:
Solution Manual
Resource:
Fundamentals of Microelectronics
Edition:
2nd Edition
Author(s):
Behzad Razavi
2N4401 / MMBT4401
2N4401
MMBT4401 C
E C
B
TO-92
SOT-23
E
B
Mark: 2X
NPN General Pupose Amplifier This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA.
Absolute Maximum Ratings* Symbol
TA = 25°C unless otherwise noted
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
40
V
VCBO
Collector-Base Voltage
60
V
VEBO
Emitter-Base Voltage
6.0
V
IC
Collector Current - Continuous
600
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics Symbol
TA = 25°C unless otherwise noted
Characteristic
Max
Units
2N4401 625 5.0 83.3
*MMBT4401 350 2.8
RθJC
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
200
357
PD
mW mW/°C °C/W °C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
2001 Fairchild Semiconductor Corporation
2N4401/MMBT4401, Rev A
(continued)
Electrical Characteristics Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS V(BR)CEO
Collector-Emitter Breakdown Voltage*
IC = 1.0 mA, IB = 0
40
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 0.1 mA, IE = 0
60
V V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 0.1 mA, IC = 0
6.0
V
IBL
Base Cutoff Current
VCE = 35 V, VEB = 0.4 V
0.1
µA
ICEX
Collector Cutoff Current
VCE = 35 V, VEB = 0.4 V
0.1
µA
2N4401 / MMBT4401
NPN General Purpose Amplifier
ON CHARACTERISTICS* hFE
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
IC = 0.1 mA, VCE = 1.0 V IC = 1.0 mA, VCE = 1.0 V IC = 10 mA, VCE = 1.0 V IC = 150 mA, VCE = 1.0 V IC = 500 mA, VCE = 2.0 V IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA
20 40 80 100 40
0.75
300 0.4 0.75 0.95 1.2
V V V V
SMALL SIGNAL CHARACTERISTICS fT
Current Gain - Bandwidth Product
Ccb
Collector-Base Capacitance
Ceb
Emitter-Base Capacitance
hie
Input Impedance
hre
Voltage Feedback Ratio
hfe
Small-Signal Current Gain
hoe
Output Admittance
IC = 20 mA, VCE = 10 V, f = 100 MHz VCB = 5.0 V, IE = 0, f = 140 kHz VBE = 0.5 V, IC = 0, f = 140 kHz IC = 1.0 mA, VCE = 10 V, f = 1.0 kHz IC = 1.0 mA, VCE = 10 V, f = 1.0 kHz IC = 1.0 mA, VCE = 10 V, f = 1.0 kHz IC = 1.0 mA, VCE = 10 V, f = 1.0 kHz
250
MHz 6.5
pF
30
pF
1.0
15
kΩ
0.1
8.0
x 10
40
500
1.0
30
µmhos
15
ns ns
-4
SWITCHING CHARACTERISTICS td
Delay Time
VCC = 30 V, VEB = 2 V,
tr
Rise Time
IC = 150 mA, IB1 = 15 mA
20
ts
Storage Time
VCC = 30 V, IC = 150 mA
225
ns
tf
Fall Time
IB1 = IB2 = 15 mA
30
ns
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
3
(continued)
V CE = 5V
400 125 °C
300 200
25 °C
100 - 40 °C
0 0.1
0.3
1 3 10 30 100 I C - COLLECTOR CURRENT (mA)
300
Base-Emitter Saturation Voltage vs Collector Current β = 10
1
- 40 °C
0.8
25 °C 125 °C
0.6
0.4 1
10 100 I C - COLLECTOR CURRENT (mA)
500
V CESAT - COLLECTOR-EMITTER VOLTAGE (V)
500
V BE(ON) - BASE-EMITTER ON VOLTAGE (V)
Typical Pulsed Current Gain vs Collector Current
V BESAT - BASE-EMITTER VOLTAGE (V)
h FE - TYPICAL PULSED CURRENT GAIN
Typical Characteristics
0.4 β = 10 0.3
125 °C
0.2 25 °C
0.1 - 40 °C
1
10 100 I C - COLLECTOR CURRENT (mA)
500
Base-Emitter ON Voltage vs Collector Current 1 VCE = 5V 0.8
- 40 °C 25 °C
0.6 125 °C
0.4
0.2 0.1
1 10 I C - COLLECTOR CURRENT (mA)
25
Emitter Transition and Output Capacitance vs Reverse Bias Voltage
Collector-Cutoff Current vs Ambient Temperature 500 100
V
CB
20
= 40V
CAPACITANCE (pF)
I CBO - COLLECTOR CURRENT (nA)
Collector-Emitter Saturation Voltage vs Collector Current
10 1 0.1
f = 1 MHz
16 12 C te
8 C ob
4 25
50 75 100 125 T A - AMBIENT TEMPERATURE (° C)
150
0.1
1 10 REVERSE BIAS VOLTAGE (V)
100
2N4401 / MMBT4401
NPN General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Turn On and Turn Off Times vs Collector Current 400 I B1 = I B2 =
Switching Times vs Collector Current 400
Ic
320 TIME (nS)
V cc = 25 V
240 160
240 ts
160
tr
t off
80
tf
80
t on
td
100 I C - COLLECTOR CURRENT (mA)
0 10
1000
100 I C - COLLECTOR CURRENT (mA)
Power Dissipation vs Ambient Temperature 1 PD - POWER DISSIPATION (W)
TIME (nS)
10
320 V cc = 25 V
0 10
Ic
I B1 = I B2 =
10
SOT-223
0.75
TO-92
0.5 SOT-23
0.25
0
0
25
50 75 100 o TEMPERATURE ( C)
125
150
1000
2N4401 / MMBT4401
NPN General Purpose Amplifier