6NS(R)
Naina Semiconductor Ltd.
Standard Recovery Diodes (Stud Version), 6A Features
Diffused Series Industrial grade Available in Normal and Reverse polarity Metric and UNF thread type
Electrical Specifications (TE = 25oC, unless otherwise noted) Symbol
Parameters
Values
Units
IF(AV)
Maximum avg. forward current @ TE = 150oC
6
A
VFM
Maximum peak forward voltage drop @ rated IF(AV)
1.2
V
175
A
150
A2sec
Maximum peak one cycle (non-rep) surge current @ 10 msec Maximum I2t rating (non-rep) for 5 to 10 msec
IFSM I2t
DO-203AA (DO-4)
Voltage Ratings (TE = 25oC, unless otherwise noted) Type number
Voltage Code
6NS(R)
10 20 40 60 80 100 120 140 160
VRRM, Maximum repetitive peak reverse voltage (V) 100 200 400 600 800 1000 1200 1400 1600
VR(RMS), Maximum RMS reverse voltage (V) 70 140 280 420 560 700 840 980 1120
VR, Maximum DC blocking voltage (V)
Recommended RMS working voltage (V)
IRRM, Maximum reverse leakage current (mA)
100 200 400 600 800 1000 1200 1400 1600
40 80 160 240 320 400 480 560 640
12
Thermal & Mechanical Specifications (TE = 25oC, unless otherwise noted) Symbol
Parameters
Values
o
Rth(JC)
Maximum thermal resistance, junction to case
TJ Tstg
Operating junction temperature range Storage temperature
-65 to 150 -65 to 150
o
F W
Mounting torque (non-lubricated threads) Approximate allowable weight
1.5 ± 10% 7
Nm g
1
2.5
Units
D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653 sales@nainasemi.com • www.nainasemi.com
C/W C C
o