Part number irfi840g. qualification standards can be found on ir’ s web site. this is a typical value at device destruction and represents operation outside rated limits. pulse width ≤ 400µs; duty cycle ≤ 2%. saber model - irfz46n ( cad) product catalogs. european headquarters: hurst green, oxted, surrey rh8 9bb, uk tel: ir canada: 7321 victoria park ave. ir world headquarters: 233 kansas st. basic gate charge waveform fig 13b. package limitation current is 39a. 2µf current regulator same type as d. this product has been designed and qualified for the industrial market. advanced hexfet® power mosfets from international rectifier utilize advanced processing techniques to achieve extremely low on- resistance per silicon area. 55v single n- channel power mosfet in a d2- pak package. when mounted on 1" square pcb ( fr- 4 or g10 material ). irfz46n product details. date code ( yyww) yy = year ww = week. high- current rating. size: 85k international rectifier. unitsrθjcjunction- to- case datasheet search, datasheets, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs and other semiconductors. world headquarters: 233 kansas st. calculated continuous current based on maximum allowable junction temperature. irfz46n datasheet ( pdf). irfz46npbf datasheet ( pdf). units conditions. irfz46n datasheet, irfz46n pdf, irfz46n data sheet, datasheet, data sheet, pdf, international rectifier, 55v single n- channel hexfet power mosfet in a to- 220ab package. , el segundo, california 90245, tel:. vds ig id 3ma vgs. gate driver selection guide ( pdf) infineon' s latest power and sensing guide. uses irfz46n data and test conditions. hexfet® power mosfet • dynamic dv/ dt rating • 175° c operating temperature • fast switching • ease of paralleling • simple drive requirements. note: for the most current drawings. optimized for broadest availability from distribution partners. pd- 91277irfz46nhexfet power mosfet advanced process technologydvdss = 55v ultra low on- resistance dynamic dv/ dt rating 175c operating temperaturerds ( on) = 16. ir provided a wide range of products including power management ics, power mosfets, igbts, and other power. springfield, new jersey 07081 u. international rectifier ( ir) was an american company that specialized in the design and manufacture of power management and power control semiconductors. summary of features. the ir mosfet family of power mosfets utilizes proven silicon processes offering designers a wide portfolio of devices to support various irfz46n pdf applications such as dc motors, inverters, smps, lighting, load switches as well as battery powered applications. 5mg fast switching fully avalanche ratedid = 53asdescriptionadvanced hexfet power mosfets from. industry standard surface- mount power package. current sampling resistors + - fig 13a. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer. product qualification according to jedec standard. irfz46npbfhexfet® power mosfet1/ 29/ 04absolute maximum ratingsparametertyp. , el segundo, california 90245, usa tel: tac fax: visit us at www. the company was founded in 1947 and was headquartered in el segundo, california. 55v single nchannel power mosfet in a to- 220 package. this is a calculated value limited to tj = 175° c. the data contained in this document is exclusively intended for technically trained staff. it is the responsibility of customer’ s irfz46n pdf technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document
with respect to such application. com for sales contact information. , suite 201, markham, ontario l3r 2z8, tel: ir germany. planar cell structure for wide soa. com qg qgs qgd vg charge d.