PolarHVTM Power MOSFET
IXTA 16N50P IXTP 16N50P IXTQ 16N50P
= 500 V = 16 A ≤ 400 mΩ Ω
VDSS ID25 RDS(on)
N-Channel Enhancement Mode Avalanche Rated
Symbol
Test Conditions
Maximum Ratings
VDSS VDGR
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
500 500
V V
VGS VGSM
Continuous Transient
±30 ±40
V V
ID25 IDM
TC = 25°C TC = 25°C, pulse width limited by TJM
16 48
A A
IAR EAR EAS
TC = 25°C TC = 25°C TC = 25°C
16 25 750
A mJ mJ
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω
10
V/ns
PD
TC = 25°C
300
W
-55 ... +150 150 -55 ... +150
°C °C °C
300 260
°C °C
TJ TJM Tstg TL TSOLD
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s
Md
Mounting torque
Weight
TO-220 TO-263 TO-3P
(TO-220, TO-3P)
VGS = 0 V, ID = 250 μA
500
VGS(th)
VDS = VGS, ID = 250μA
3.0
IGSS
VGS = ±30 VDC, VDS = 0
IDSS
VDS = VDSS VGS = 0 V
V
TO-220 (IXTP)
G
TJ = 125°C
VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
V
±10
nA
5 100
μA μA
D
S
G = Gate S = Source
(TAB)
D = Drain TAB = Drain
Features z
International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
Advantages z z z
© 2006 IXYS All rights reserved
(TAB)
G
z
400 mΩ
D S
TO-3P (IXTQ)
z
5.5
S (TAB)
g g g
Characteristic Values Min. Typ. Max.
BVDSS
RDS(on)
G
1.13/10 Nm/lb.in. 4 3 5.5
Symbol Test Conditions (TJ = 25°C, unless otherwise specified)
TO-263 (IXTA)
Easy to mount Space savings High power density DS99323E(03/06)
IXTA 16N50P IXTP 16N50P IXTQ 16N50P Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max.
gfs
VDS= 20 V; ID = 0.5 ID25, pulse test
9
16
S
2250
pF
240
pF
Crss
12
pF
td(on)
24
ns
Ciss Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25
28
ns
td(off)
RG = 10 Ω (External)
70
ns
25
ns
43
nC
15
nC
12
nC
tf Qg(on) Qgs
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
0.42 °C/W
RthJC RthCS RthCS
TO-263 (IXTA) Outline
(TO-220) (TO-3P)
Source-Drain Diode
°C/W °C/W
0.25 0.21
Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max.
Symbol
Test Conditions
IS
VGS = 0 V
16
A
ISM
Repetitive
48
A
VSD
IF = IS, VGS = 0 V, Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
1.5
V
trr
IF = 16 A -di/dt = 100 A/μs
400
TO-220 (IXTP) Outline
ns
TO-3P Outline
Pins: 1 - Gate 3 - Source
IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106
4,931,844 5,017,508 5,034,796
5,049,961 5,063,307 5,187,117
5,237,481 5,381,025 5,486,715
6,162,665 6,259,123 B1 6,306,728 B1
6,404,065 B1 6,534,343 6,583,505
6,683,344 6,710,405B2 6,710,463
6,727,585 6,759,692 6,771,478 B2
2 - Drain 4 - Drain
IXTA 16N50P Fig. 1. Output Characteristics @ 25ºC
Fig. 2. Output Characteristics @ 125ºC
20
20 V GS = 10V 8V 7V
18 16
16 14
I D - Amperes
I D - Amperes
V GS = 10V 8V 7V
18
14 12 10 8
12 10
6V
8 6
6
6V
4
4
2
2
5V
0
0 0
1
2
3
4
5
6
7
8
9
0
10
2
4
6
8
Fig. 3. R DS(on) Normalized to ID = 8A v s. Junction Temperature
12
14
16
18
20
Fig. 4. R DS(on) Normalized to ID = 8A v s. Drain Current
3.1
2.8 V GS = 10V
2.8
V GS = 10V
2.6 2.4
R DS(on) - Normalized
2.5
R DS(on) - Normalized
10
V DS - Volts
V DS - Volts
2.2 I D = 16A
1.9 1.6
I D = 8A
1.3
TJ = 125ºC 2.2 2 1.8 1.6 1.4 TJ = 25ºC
1
1.2
0.7
1
0.4
0.8 -50
-25
0
25
50
75
100
125
150
0
2
4
6
8
10
12
14
16
18
20
I D - Amperes
T J - Degrees Centigrade
Fig. 5. Maximum Drain Current v s. Case Temperature
Fig. 6. Input Admittance
18
20
16
18 16
14
14 12
I D - Amperes
I D - Amperes
IXTP 16N50P IXTQ 16N50P
10 8 6
TJ = 125ºC 25ºC - 40ºC
12 10 8 6
4
4
2
2 0
0 -50
-25
0
25
50
75
T J - Degrees Centigrade
© 2006 IXYS All rights reserved
100
125
150
4
4.5
5
5.5
V GS - Volts
6
6.5
7
IXTA 16N50P IXTP 16N50P IXTQ 16N50P Fig. 8. Forward Voltage Drop of Intrinsic Diode
Fig. 7. Transconductance 70
26 24
60
22 20
50 TJ = - 40ºC 25ºC 125ºC
16 14
I S - Amperes
g f s - Siemens
18
12 10
40
30
8
TJ = 125ºC
20
6 4
TJ = 25ºC
10
2 0
0 0
2
4
6
8
10
12
14
16
18
20
0.3
0.4
0.5
0.6
I D - Amperes
0.7
0.8
0.9
1
1.1
1.2
35
40
V SD - Volts
Fig. 9. Gate Charge
Fig. 10. Capacitance
10
10,000 V DS = 250V
9
f = 1 MHz
8
Capacitance - PicoFarads
I D = 8A I G = 10mA
V GS - Volts
C iss
1,000
7 6 5 4 3
C oss
100
10
2
C rss
1 1
0 0
5
10
15
20
25
30
35
40
0
45
5
10
15
20
25
30
V DS - Volts
Q G - NanoCoulombs
Fig. 12. Maximum Transient Thermal Resistance
Fig. 11. Forward-Bias Safe Operating Area 1.00
100
R (th)JC - ºC / W
I D - Amperes
RDS(on) Limit 25µs 10
100µs 1ms
0.10
10m TJ = 150ºC
DC
TC = 25ºC 1 10
100
1000
V DS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
0.01 0.0001
0.001
0.01
0.1
Pulse W idth - Seconds
1
10