Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2725DX
GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.
QUICK REFERENCE DATA SYMBOL
PARAMETER
CONDITIONS
VCESM IC ICM Ptot VCEsat ICsat ts
Collector-emitter voltage peak value Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time
VBE = 0 V
PINNING - SOT399 PIN
PIN CONFIGURATION
DESCRIPTION
1
base
2
collector
3
emitter
Ths ≤ 25 ˚C IC = 7.0 A; IB = 1.75 A f = 16 kHz ICsat = 7.0 A; f = 16kHz
case isolated
TYP.
MAX.
UNIT
7.0 5.8
1700 12 30 45 1.0 6.5
V A A W V A µs
SYMBOL
c
case
b Rbe
e
1 2 3
LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL
PARAMETER
CONDITIONS
VCESM IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj
Collector-emitter voltage peak value Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature
VBE = 0 V
average over any 20 ms period Ths ≤ 25 ˚C
MIN.
MAX.
UNIT
-65 -
1700 12 30 12 20 200 9 45 150 150
V A A A A mA A W ˚C ˚C
MIN.
MAX.
UNIT
-
10
kV
ESD LIMITING VALUES SYMBOL
PARAMETER
CONDITIONS
VC
Electrostatic discharge capacitor voltage Human body model (250 pF, 1.5 kΩ)
1 Turn-off current.
August 2002
1
Rev 2.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2725DX
THERMAL RESISTANCES SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Rth j-hs
Junction to heatsink
without heatsink compound
-
3.7
K/W
Rth j-hs
Junction to heatsink
with heatsink compound
-
2.8
K/W
Rth j-a
Junction to ambient
in free air
35
-
K/W
MIN.
TYP.
MAX.
UNIT
-
-
2500
V
-
22
-
pF
MIN.
TYP.
MAX.
UNIT
-
-
1.0 2.0
mA mA
7.5
110 13.5 70 0.86 1.4 19 5.8
1.0 0.95 2.2 7.8
mA V Ω V V V
TYP.
MAX.
UNIT
5.8 0.6
6.5 0.8
µs µs
ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL
PARAMETER
CONDITIONS
Visol
Repetitive peak voltage from all three terminals to external heatsink
R.H. ≤ 65 % ; clean and dustfree
Cisol
Capacitance from T2 to external f = 1 MHz heatsink
STATIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL
PARAMETER
CONDITIONS 2
ICES ICES
Collector cut-off current
IEBO BVEBO REB VCEsat VBEsat VF hFE hFE
Emitter cut-off current Emitter-base breakdown voltage Base-emitter resistance Collector-emitter saturation voltage Base-emitter saturation voltage Diode forward voltage DC current gain
VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C VEB = 7.5 V; IC = 0 A IB = 1 mA VEB = 7.5 V IC = 7.0 A; IB = 1.75 A IC = 7.0 A; IB = 1.75 A IF = 7 A IC = 1 A; VCE = 5 V IC = 7 A; VCE = 1 V
0.78 3.8
DYNAMIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL
ts tf
PARAMETER
CONDITIONS
Switching times (16 kHz line deflection circuit)
ICsat = 7.0 A; LC = 650 µH; Cfb = 18 nF; VCC = 162 V; IB(end) = 1.5 A; LB = 2 µH; -VBB = 4 V
Turn-off storage time Turn-off fall time
2 Measured with half sine-wave voltage (curve tracer).
August 2002
2
Rev 2.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
ICsat
TRANSISTOR IC
BU2725DX
+ 150 v nominal adjust for ICsat
DIODE t
Lc IBend
IB
t 20us
D.U.T.
26us
LB
IBend
Cfb
64us VCE
-VBB
Rbe
t
Fig.1. Switching times waveforms (16 kHz).
Fig.3. Switching times test circuit.
ICsat
hFE
BU2727D/DF
100
90 %
VCE = 5 V
Ths = 25 C Ths = 85 C
IC
10 % tf
10
t
ts IB IBend
t 1 0.01
- IBM
1
10
100 IC / A
Fig.2. Switching times definitions.
August 2002
0.1
Fig.4. DC current gain. hFE = f (IC) Parameter Ths (Low and high gain)
3
Rev 2.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
100
BU2725DX
hFE
1
VCE = 1 V
VBEsat (V) IC = 6 A
Ths = 25 °C Ths = 85 °C
0.9
0.8
10
Ths = 85 °C Ths = 25 °C
4A 0.7
1 0.01
0.1
1
10
0.6
100 IC (A)
Fig.5. DC current gain. hFE = f (IC) Parameter Ths (Low and high gain)
10
0
1
2
3
IB (A)
4 4
Fig.7. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter IC
ts/tf/ us
VCEsat (V)
BU2527AFX,DFX
10 Ths = 85 °C Ths = 25 °C
9 8
1
7 IC/IB = 12
6 5 IC/IB = 5
4
0.1
3 2 1
0.01 0.1
1
10
IC (A)
0
100
Fig.6. Typical collector-emitter saturation voltage. VCEsat = f (IC); parameter IC/IB
August 2002
0
1
2
3
IB / A
4
Fig.8. Limit storage and fall time. ts = f (IB); tf = f (IB); Ths = 85˚C; f = 16 kHz
4
Rev 2.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
Normalised Power Derating
PD%
120
BU2725DX
VCC
with heatsink compound
110 100 90 80
LC
70 60 50
VCL
IB1
40
LB
30 20
CFB
T.U.T.
-VBB
10 0 0
20
40
60
80 Ths / C
100
120
140
Fig.11. Test Circuit RBSOA. VCC = 150 V; -VBB = 1 - 4 V; LC = 1 mH; VCL = 1500 V; LB = 0.5 - 2 µH; CFB = 1 - 3 nF; IB(end) = 0.8 - 4 A
Fig.9. Normalised power dissipation. PD% = 100⋅PD/PD 25˚C = f (Ths)
10
Zth / (K/W)
BU2525AF
IC / A 35 30
0.5
1
25
0.2 0.1 0.05
0.1
15
PD
0.01 D=0
tp D= T
tp
1E-02 t/s
5
t
T
1E-04
10
0 100
1E+00
1000
1700
VCE / V
Fig.12. Reverse bias safe operating area. Tj ≤ Tjmax
Fig.10. Transient thermal impedance. Zth j-hs = f(t); parameter D = tp/T
August 2002
Area where fails occur
20
0.02
0.001 1E-06
BU2727A/AF/D/DF
5
Rev 2.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2725DX
MECHANICAL DATA Dimensions in mm
5.8 max
16.0 max
Net Mass: 5.88 g
3.0
0.7 4.5 3.3
10.0 27 max
25 25.1 25.7
22.5 max 5.1 2.2 max 18.1 min
4.5 1.1 0.4 M 2 0.95 max 5.45
5.45
3.3
Fig.13. SOT399; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8".
August 2002
6
Rev 2.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2725DX
DEFINITIONS DATA SHEET STATUS DATA SHEET STATUS3
PRODUCT STATUS4
DEFINITIONS
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A
Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. ď›™ Philips Electronics N.V. 2002 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
3 Please consult the most recently issued datasheet before initiating or completing a design. 4 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
August 2002
7
Rev 2.000