6 Light and Optics 6.3 Diffraction and Interference
P2230500
Diffraction intensity at slit and double slit systems with optical profile bench
Diffraction intensity I as a function of location x for the single slit b1 = 0.1 mm and b2 = 0.2 mm. The x axis of the graph for b1 = 0.1 mm is shifted upwards. The intensity of the areas next to the central peak is represented enlarged by a factor of 10. (Distance between slit and photodiode L = 107 cm; = 632.8 nm).
Principle
Si-Photodetector with Amplifier
Slit and double slit systems are illuminated with laser light. The corresponding diffraction patterns are measured by means of a photodiode which can be shifted, as a function of location and intensity. Tasks 1. Determination of the intensity distribution of the diffraction patterns due to two slits of different widths.The corresponding width of the slit is determined by means of the relative positions of intensity values of the extremes. Furthermore, intensity relations of the peaks are evaluated. 2. Determination of location and intensity of the extreme values of the diffraction patterns due to two double slits with the same widths, but different distances between the slits. Widths of slits and distances between the slits must be determined as well as the intensity relations of the peaks. What you can learn about ▪ Huygens principle, Interference, Fraunhofer and Fresnel diffraction, Coherence, Laser
Main articles Laser, He-Ne, 1.0 mW, 230 V AC Si-Photodetector with Amplifier Sliding device, horizontal Control Unit for Si-Photodetector Optical profile-bench, l 1500mm Object holder, 5x5 cm Digital multimeter 2010 Lens holder Slide mount for optical bench, h = 30 mm
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Function and Applications Silicon diode with high signal-to-noise ratio for photometric measurements where there is a high degree of interference. Equipment and technical data ▪ Movable holder for diode on round mounting rod with lens for incoming light, Removable slot filter ▪ 1.5/m lead with diode plug for connecting to the required control unit, Spectral range 390 nm...1150 nm, Maximum sensitivity 900 nm ▪ Voltage when dark 0.75 mV, Sensitivity (900 nm) 860 mV/ µW/cm², Band width 65 kHz, Slot filter d= 0.3 mm, Mounting rod l=110 mm, diam.=10 mm
08735-00