Issuu on Google+

IS64WV3216BLL IS61WV3216BLL

ISSI

®

32K x 16 HIGH-SPEED CMOS STATIC RAM NOVEMBER 2005

FEATURES • High-speed access time: 12 ns: 3.3V + 10% 15 ns: 2.5V-3.6V • CMOS low power operation: 50 mW (typical) operating 25 µW (typical) standby • TTL compatible interface levels • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes • Automotive Temperature Available • Lead-free available

DESCRIPTION The ISSI IS61/64WV3216BLL is a high-speed, 524,288-bit static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSI 's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12ns (3.3V + 10%) and 15ns (2.5V-3.6V) with low power consumption. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access. The IS61/64WV3216BLL is packaged in the JEDEC standard 44-pin TSOP-II, and 48-pin mini BGA (6mm x 8mm).

FUNCTIONAL BLOCK DIAGRAM

A0-A14

DECODER

32K x 16 MEMORY ARRAY

I/O DATA CIRCUIT

COLUMN I/O

VDD GND I/O0-I/O7 Lower Byte I/O8-I/O15 Upper Byte

CE OE WE UB

CONTROL CIRCUIT

LB

Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. A 09/26/05

1


IS64WV3216BLL IS61WV3216BLL

ISSI

®

PIN CONFIGURATIONS 44-Pin TSOP-II

48-Pin mini BGA (6mm x 8mm) 1

2

3

4

5

6

A

LB

OE

A0

A1

A2

NC

B

I/O8

UB

A3

A4

CE

I/O0

C

I/O9

I/O10

A5

A6

I/O1

I/O2

D

GND

I/O11

NC

A7

I/O3

VDD

E

VDD

I/O12

NC

NC

I/O4

GND

F

I/O14

I/O13

A14

NC

I/O5

I/O6

G

I/O15

NC

A12

A13

WE

I/O7

H

NC

A8

A9

A10

A11

NC

NC A14 A13 A12 A11 CE I/O0 I/O1 I/O2 I/O3 VDD GND I/O4 I/O5 I/O6 I/O7 WE A10 A9 A8 A7 NC

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22

44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23

A0 A1 A2 OE UB LB I/O15 I/O14 I/O13 I/O12 GND VDD I/O11 I/O10 I/O9 I/O8 NC A3 A4 A5 A6 NC

PIN DESCRIPTIONS

2

A0-A14

Address Inputs

I/O0-I/O15

Data Inputs/Outputs

CE

Chip Enable Input

OE

Output Enable Input

WE

Write Enable Input

LB

Lower-byte Control (I/O0-I/O7)

UB

Upper-byte Control (I/O8-I/O15)

NC

No Connection

VDD

Power

GND

Ground

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. A 09/26/05


IS64WV3216BLL IS61WV3216BLL

ISSI

®

TRUTH TABLE Mode Not Selected Output Disabled Read

Write

WE

CE

OE

LB

UB

X H X H H H L L L

H L L L L L L L L

X H X L L L X X X

X X H L H L L H L

X X H H L L H L L

I/O PIN I/O0-I/O7 I/O8-I/O15 High-Z High-Z High-Z DOUT High-Z DOUT DIN High-Z DIN

High-Z High-Z High-Z High-Z DOUT DOUT High-Z DIN DIN

VDD Current ISB1, ISB2 ICC ICC

ICC

ABSOLUTE MAXIMUM RATINGS(1) Symbol VTERM TSTG PT VDD

Parameter Terminal Voltage with Respect to GND Storage Temperature Power Dissipation VDD Related to GND

Value –0.5 to VDD+0.5 –65 to +150 1.5 -0.2 to +3.9

Unit V °C W V

Note: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

OPERATING RANGE (VDD) Range Commercial Industrial Automotive

Ambient Temperature 0°C to +70°C –40°C to +85°C –40°C to +125°C

VDD (15 ns) 2.5V-3.6V 2.5V-3.6V 2.5V-3.6V

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. A 09/26/05

VDD (12 ns) 3.3V + 10% 3.3V + 10% 3.3V + 10%

3


IS64WV3216BLL IS61WV3216BLL

ISSI

®

DC ELECTRICAL CHARACTERISTICS (Over Operating Range) VDD = 2.5V-3.6V Symbol

Parameter

Test Conditions

Min.

Max.

Unit

VOH

Output HIGH Voltage

VDD = Min., IOH = –1.0 mA

2.3

V

VOL

Output LOW Voltage

VDD = Min., IOL = 1.0 mA

0.4

V

VIH

Input HIGH Voltage

2.0

VDD + 0.3

V

VIL

Input LOW Voltage(1)

–0.3

0.8

V

ILI

Input Leakage

GND ≤ VIN ≤ VDD

–2

2

µA

ILO

Output Leakage

GND ≤ VOUT ≤ VDD, Outputs Disabled

–2

2

µA

Min.

Max.

Unit

Note: 1.

VIL (min.) = –0.3V DC; VIL (min.) = –2.0V AC (pulse width - 2.0 ns). Not 100% tested. VIH (max.) = VDD + 0.3V DC; VIH (max.) = VDD + 2.0V AC (pulse width - 2.0 ns). Not 100% tested.

DC ELECTRICAL CHARACTERISTICS (Over Operating Range) VDD = 3.3V + 10% Symbol

Parameter

Test Conditions

VOH

Output HIGH Voltage

VDD = Min., IOH = –4.0 mA

2.4

V

VOL

Output LOW Voltage

VDD = Min., IOL = 8.0 mA

0.4

V

VIH

Input HIGH Voltage

2

VDD + 0.3

V

VIL

Input LOW Voltage(1)

–0.3

0.8

V

ILI

Input Leakage

GND ≤ VIN ≤ VDD

–2

2

µA

ILO

Output Leakage

GND ≤ VOUT ≤ VDD, Outputs Disabled

–2

2

µA

Note: 1.

4

VIL (min.) = –0.3V DC; VIL (min.) = –2.0V AC (pulse width - 2.0 ns). Not 100% tested. VIH (max.) = VDD + 0.3V DC; VIH (max.) = VDD + 2.0V AC (pulse width - 2.0 ns). Not 100% tested.

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. A 09/26/05


IS64WV3216BLL IS61WV3216BLL

ISSI

®

POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range) Symbol Parameter

Test Conditions

Options

ICC

VDD = Max., IOUT = 0 mA, f = fMAX

COM.

VDD Dynamic Operating Supply Current

IND. AUTO

typ.(2) ICC1

Operating Supply Current

VDD = Max., Iout = 0mA, f = 0

COM. IND. AUTO

ISB2

CMOS Standby Current (CMOS Inputs)

VDD = Max., CE ≥ VDD – 0.2V, VIN ≥ VDD – 0.2V, or VIN ≤ 0.2V, f = 0

COM. IND. AUTO

typ.(2)

-12 ns Min. Max.

-15 ns Min. Max.

Unit

— — — —

35 45 60 20

— — — —

30 40 50 20

mA

— — —

5 5 5

— — —

5 5 5

mA

— — — —

20 50 75 6

— — — —

20 50 75 6

uA

Note: 1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change. 2. Typical values are measured at VDD=2.5V, TA=25oC. Not 100% tested.

CAPACITANCE(1) Symbol

Parameter

CIN

Input Capacitance

COUT

Input/Output Capacitance

Conditions

Max.

Unit

VIN = 0V

6

pF

VOUT = 0V

8

pF

Note: 1. Tested initially and after any design or process changes that may affect these parameters.

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. A 09/26/05

5


IS64WV3216BLL IS61WV3216BLL

ISSI

®

AC TEST CONDITIONS Parameter Input Pulse Level Input Rise and Fall Times Input and Output Timing and Reference Level (VRef) Output Load

Unit (2.5V-3.6V) 0V to VDD V 1.5ns VDD/2

Unit (3.3V + 10%) 0V to VDD V 1.5ns VDD/2 + 0.05

See Figures 1a and 1b

See Figures 1a and 1b

AC TEST LOADS 319 Ω

Zo=50Ω

2.5V

50Ω VRef

OUTPUT 30 pF Including jig and scope

Figure 1a.

6

OUTPUT 5 pF Including jig and scope

353 Ω

Figure 1b.

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. A 09/26/05


IS64WV3216BLL IS61WV3216BLL

ISSI

®

READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range) Symbol

Parameter

-12 ns Min. Max.

-15 ns Min. Max.

Unit

tRC

Read Cycle Time

12

15

ns

tAA

Address Access Time

12

15

ns

tOHA

Output Hold Time

3

3

ns

tACE

CE Access Time

12

15

ns

OE Access Time

6

7

ns

tHZOE

OE to High-Z Output

6

0

6

ns

tLZOE(2)

OE to Low-Z Output

0

0

ns

(2

tHZCE

CE to High-Z Output

0

6

0

6

ns

(2)

tLZCE

CE to Low-Z Output

3

3

ns

tBA

LB, UB Access Time

6

7

ns

tHZB

LB, UB to High-Z Output

0

6

0

6

ns

tLZB

LB, UB to Low-Z Output

0

0

ns

tDOE (2)

Notes: 1. Test conditions assume signal transition times of 1.5 ns or less, timing reference levels of 1.25V, input pulse levels of 0V to VDD V and output loading specified in Figure 1a. 2. Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested. 3. Not 100% tested.

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. A 09/26/05

7


IS64WV3216BLL IS61WV3216BLL

ISSI

®

AC WAVEFORMS READ CYCLE NO. 1(1,2) (Address Controlled) (CS = OE = VIL, UB or LB = VIL) tRC

ADDRESS tAA

tOHA

tOHA

DOUT

DATA VALID

PREVIOUS DATA VALID

READ CYCLE NO. 2(1,3) tRC

ADDRESS tAA

tOHA

OE tHZOE

tDOE

CE

tLZOE tACE

tHZCE

tBA

tHZB

tLZCE

LB, UB

DOUT

HIGH-Z

tLZB DATA VALID

Notes: 1. WE is HIGH for a Read Cycle. 2. The device is continuously selected. OE, CE, UB, or LB = VIL. 3. Address is valid prior to or coincident with CE LOW transition.

8

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. A 09/26/05


IS64WV3216BLL IS61WV3216BLL

ISSI

®

WRITE CYCLE SWITCHING CHARACTERISTICS(1,2) (Over Operating Range) Symbol

Parameter

-12 ns Min. Max.

-15 ns Min. Max.

Unit

tWC

Write Cycle Time

12

15

ns

tSCE

CE to Write End

9

10

ns

tAW

Address Setup Time to Write End

9

10

ns

tHA

Address Hold from Write End

0

0

ns

tSA

Address Setup Time

0

0

ns

tPWB

LB, UB Valid to End of Write

9

10

ns

tPWE1

WE Pulse Width (OE = HIGH)

9

10

ns

tPWE2

WE Pulse Width (OE = LOW)

11

12

ns

tSD

Data Setup to Write End

9

9

ns

tHD

Data Hold from Write End

0

0

ns

tHZWE(3)

WE LOW to High-Z Output

6

7

ns

tLZWE(3)

WE HIGH to Low-Z Output

3

3

ns

Notes: 1. Test conditions for IS61WV3216BLL assume signal transition times of 1.5ns or less, timing reference levels of 1.25V, input pulse levels of 0V to VDD V and output loading specified in Figure 1a. 2. Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested. 3. The internal write time is defined by the overlap of CE LOW and UB or LB, and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the write.

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. A 09/26/05

9


IS64WV3216BLL IS61WV3216BLL

ISSI

®

WRITE CYCLE NO. 1(1,2) (CE Controlled, OE = HIGH or LOW)

t WC VALID ADDRESS

ADDRESS

t SA

t SCE

t HA

CE

t AW t PWE1 t PWE2

WE

t PBW UB, LB

t HZWE DOUT

DATA UNDEFINED

t LZWE HIGH-Z

t SD DIN

t HD

DATAIN VALID UB_CEWR1.eps

10

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. A 09/26/05


IS64WV3216BLL IS61WV3216BLL

ISSI

®

WRITE CYCLE NO. 2(1) (WE Controlled, OE = HIGH during Write Cycle) t WC ADDRESS

VALID ADDRESS

t HA OE

CE

LOW

t AW t PWE1 WE

t SA

t PBW

UB, LB

t HZWE DOUT

t LZWE HIGH-Z

DATA UNDEFINED

t SD

t HD

DATAIN VALID

DIN

UB_CEWR2.eps

WRITE CYCLE NO. 3 (WE Controlled: OE is LOW During Write Cycle) t WC ADDRESS

VALID ADDRESS

OE

LOW

CE

LOW

t HA

t AW t PWE2 WE

t SA

t PBW

UB, LB

t HZWE DOUT

DATA UNDEFINED

t LZWE HIGH-Z

t SD DIN

t HD

DATAIN VALID UB_CEWR3.eps

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. A 09/26/05

11


IS64WV3216BLL IS61WV3216BLL

ISSI

®

WRITE CYCLE NO. 4 (LB, UB Controlled, Back-to-Back Write) (1,3) t WC ADDRESS

t WC

ADDRESS 1

ADDRESS 2

OE

t SA CE

LOW

t HA t SA

WE

UB, LB

t HA

t PBW

t PBW

WORD 1

WORD 2

t HZWE DOUT

t LZWE HIGH-Z

DATA UNDEFINED

t HD

t SD DIN

DATAIN VALID

t HD

t SD DATAIN VALID

UB_CEWR4.eps

Notes: 1. The internal Write time is defined by the overlap of CE = LOW, UB and/or LB = LOW, and WE = LOW. All signals must be in valid states to initiate a Write, but any can be deasserted to terminate the Write. The t SA, t HA, t SD, and t HD timing is referenced to the rising or falling edge of the signal that terminates the Write. 2. Tested with OE HIGH for a minimum of 4 ns before WE = LOW to place the I/O in a HIGH-Z state. 3. WE may be held LOW across many address cycles and the LB, UB pins can be used to control the Write function.

12

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. A 09/26/05


IS64WV3216BLL IS61WV3216BLL

ISSI

®

DATA RETENTION SWITCHING CHARACTERISTICS Symbol

Parameter

Test Condition

Operations

VDR

VDD for Data Retention

See Data Retention Waveform

IDR

Data Retention Current

VDD = 1.8V, CE ≥ VDD – 0.2V

COM. IND. AUTO

tSDR tRDR

Min.

Typ.(1)

Max.

1.8

3.6

V

— — —

6 6 6

20 50 75

µA

Unit

Data Retention Setup Time

See Data Retention Waveform

0

ns

Recovery Time

See Data Retention Waveform

tRC

ns

Note: 1. Typical values are measured at VDD = 2.5V, TA = 25 C. Not 100% tested. O

DATA RETENTION WAVEFORM (CE Controlled)

tSDR

Data Retention Mode

tRDR

VDD 1.65V

1.4V

VDR

CE GND

CE ≥ VDD - 0.2V

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. A 09/26/05

13


IS64WV3216BLL IS61WV3216BLL

ISSI

®

ORDERING INFORMATION Industrial Temperature Range: –40°C to +85°C Speed (ns) 12 12 12 12

Order Part No.

Package

IS61WV3216BLL-12TI IS61WV3216BLL-12TLI IS61WV3216BLL-12BI IS61WV3216BLL-12BLI

Plastic TSOP Plastic TSOP, Lead-free mini BGA (6mm x 8mm) mini BGA (6mm x 8mm), Lead-free

Temperature Range (A3): –40°C to +125°C Speed (ns) 15 (12*) 15 (12*) 15 (12*) 15 (12*)

Order Part No.

Package

IS64WV3216BLL-15TA3 IS64WV3216BLL-15TLA3 IS64WV3216BLL-15BA3 IS64WV3216BLL-15BLA3

Plastic TSOP Plastic TSOP, Lead-free mini BGA (6mm x 8mm) mini BGA (6mm x 8mm), Lead-free

Note: 1. Speed = 12ns for VDD = 3.3V + 10%. Speed = 15ns for VDD = 2.5V- 3.6V.

14

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. A 09/26/05


ISSI

®

PACKAGING INFORMATION Mini Ball Grid Array Package Code: B (48-pin) Top View

Bottom View φ b (48x)

1

2

3

4

5 6

6

A

4

3

2

1

A

e

B

B

C

C D

D

D

5

D1

E

E

F

F

G

G

H

H

e E

E1

A2

Notes: 1. Controlling dimensions are in millimeters.

A A1

SEATING PLANE

mBGA - 6mm x 8mm

mBGA - 8mm x 10mm

MILLIMETERS

INCHES

MILLIMETER

Sym.

Min. Typ. Max.

Min. Typ. Max.

N0. Leads

48

Sym.

Min. Typ. Max.

N0. Leads

48

INCHES Min. Typ. Max.

A

1.20

0.047

A

1.20

0.047

A1

0.24

0.30

0.009

0.012

A1

0.24

0.30

0.009

0.012

A2

0.60

0.024

A2

0.60

0.024

D

7.90

8.10

0.311

0.319

D

9.90

10.10

0.390

0.398

D1 E

5.25 BSC 5.90

6.10

0.207 BSC 0.232

0.240

D1 E

5.25 BSC 7.90

0.207 BSC 8.10

0.311

0.319

E1

3.75 BSC

0.148 BSC

E1

3.75 BSC

0.148 BSC

e

0.75 BSC

0.030 BSC

e

0.75 BSC

0.030 BSC

0.012 0.014 0.016

b

b

0.30 0.35

0.40

0.30

0.35

0.40

0.012 0.014 0.016

Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. D 01/15/03


ISSI

®

PACKAGING INFORMATION Plastic TSOP Package Code: T (Type II)

N

N/2+1

E1

1

Notes: 1. Controlling dimension: millimieters, unless otherwise specified. 2. BSC = Basic lead spacing between centers. 3. Dimensions D and E1 do not include mold flash protrusions and should be measured from the bottom of the package. 4. Formed leads shall be planar with respect to one another within 0.004 inches at the seating plane.

E

N/2 D SEATING PLANE

A

ZD

. b

e

Symbol Ref. Std. No. Leads A A1 b C D E1 E e L ZD α

Millimeters Min Max

Inches Min Max

(N) 32 — 1.20 — 0.047 0.05 0.15 0.002 0.006 0.30 0.52 0.012 0.020 0.12 0.21 0.005 0.008 20.82 21.08 0.820 0.830 10.03 10.29 0.391 0.400 11.56 11.96 0.451 0.466 1.27 BSC 0.050 BSC 0.40 0.60 0.016 0.024 0.95 REF 0.037 REF 0° 5° 0° 5°

L

α

A1

Plastic TSOP (T - Type II) Millimeters Inches Min Max Min Max 44 — 1.20 — 0.047 0.05 0.15 0.002 0.006 0.30 0.45 0.012 0.018 0.12 0.21 0.005 0.008 18.31 18.52 0.721 0.729 10.03 10.29 0.395 0.405 11.56 11.96 0.455 0.471 0.80 BSC 0.032 BSC 0.41 0.60 0.016 0.024 0.81 REF 0.032 REF 0° 5° 0° 5°

Millimeters Min Max

C

Inches Min Max 50

— 1.20 0.05 0.15 0.30 0.45 0.12 0.21 20.82 21.08 10.03 10.29 11.56 11.96 0.80 BSC 0.40 0.60 0.88 REF 0° 5°

— 0.047 0.002 0.006 0.012 0.018 0.005 0.008 0.820 0.830 0.395 0.405 0.455 0.471 0.031 BSC 0.016 0.024 0.035 REF 0° 5°

Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. F 06/18/03


IS61WV3216BLL-12TLI-TR