Page 1

2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix

N-Channel 60-V (D-S) MOSFET

PRODUCT SUMMARY Part Number

V(BR)DSS Min (V)

2N7000 2N7002

rDS(on) Max (W)

VGS(th) (V)

ID (A)

5 @ VGS = 10 V

0.8 to 3

0.2

7.5 @ VGS = 10 V

1 to 2.5

0.115

5.5 @ VGS = 10 V

0.8 to 2.5

0.225

VQ1000P

5.5 @ VGS = 10 V

0.8 to 2.5

0.225

BS170

5 @ VGS = 10 V

0.8 to 3

0.5

60

VQ1000J

FEATURES

BENEFITS

APPLICATIONS

D D D D D

D D D D D

D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Solid-State Relays

Low On-Resistance: 2.5 W Low Threshold: 2.1 V Low Input Capacitance: 22 pF Fast Switching Speed: 7 ns Low Input and Output Leakage

Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage

TO-226AA (TO-92) S

TO-236 (SOT-23)

1 G

G

1 3

2 S

D

D

2

3 Top View Top View

Marking Code: 72wll

2N7000

72 = Part Number Code for 2N7002 w = Week Code ll = Lot Traceability

Dual-In-Line

N

D1

1

14

D4

S1

2

13

S4

G1

3

12

G4

4

11

G2

5

10

G3

S2

6

9

S3

D2

7

8

D3

NC

N

Top View Plastic: VQ1000J Sidebraze: VQ1000P

Document Number: 70226 S-04279—Rev. F, 16-Jul-01

N

NC

TO-92-18RM (TO-18 Lead Form) D

1

G

2

N S

3

Top View BS170

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11-1


2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Single Parameter Drain-Source Voltage Gate-Source Voltage—Non-Repetitive Gate-Source Voltage—Continuous Continuous Drain Current (TJ = 150_C)

TA= 25_C TA= 100_C

Pulsed Drain Currenta Power Dissipation

Symbol

2N7000

2N7002

VQ1000J

VQ1000P

VDS

60

60

60

60

VGSM

"40

"40

"30

VGS

"20

"20

"20

"20

ID IDM

TA= 25_C TA= 100_C

Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range

Total Quad

PD RthJA

VQ1000J/P

BS170 "25

V

"20

0.2

0.115

0.225

0.225

0.5

0.13

0.073

0.14

0.14

0.175

0.5

0.8

1

1

0.4

0.2

1.3

1.3

2

0.16

0.08

0.52

0.52

0.8

312.5

625

96

96

62.5

TJ, Tstg

Unit

60

A

0.83 W 156

_C/W _C

–55 to 150

Notes a. Pulse width limited by maximum junction temperature. b. tp v 50 ms.

SPECIFICATIONSĊ2N7000 AND 2N7002 (TA = 25_C UNLESS OTHERWISE NOTED) Limits 2N7000

Parameter

Symbol

Test Conditions

Typa

Min

Max

2N7002

Min

Max

Unit

Static Drain-Source Breakdown Voltage Gate-Threshold Voltage

Gate-Body Leakage

V(BR)DSS VGS(th) IGSS

VGS = 0 V, ID = 10 mA

70

60

VDS = VGS, ID = 1 mA

2.1

0.8

VDS = VGS, ID = 0.25 mA

2.0

IDSS

V 1

VDS = 0 V, VGS = "15 V

"100

Drain-Source On-Resistanceb

ID(on)

rDS(on)

VDS = 60 V, VGS = 0 V

1

0.35

VDS = 7.5 V, VGS = 10 V

1

VGS = 4.5 V, ID = 0.075 A

4.5

VGS = 5 V, ID = 0.05 A

3.2

7.5

5.8

13.5

VGS = 10 V, ID = 0.5 A TJ = 125_C Forward Transconductanceb

gfs

VDS = 10 V, ID = 0.2 A

Common Source Output Conductanceb

gos

VDS = 5 V, ID = 0.05 A

m mA

500

VDS = 10 V, VGS = 4.5 V

TC = 125_C

nA

1 1000

TC = 125_C TC = 125_C

On-State Drain Currentb

2.5

"10

VDS = 0 V, VGS = "20 V VDS = 48 V, VGS = 0 V

Zero Gate Voltage Drain Current

60 3

0.075 A

0.5 5.3

2.4

5

4.4

9 100

W

7.5 13.5 80 mS

0.5

Dynamic Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

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11-2

VDS = 25 V, VGS = 0 V f = 1 MHz

22

60

50

11

25

25

2

5

5

pF

Document Number: 70226 S-04279—Rev. F, 16-Jul-01


2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix SPECIFICATIONSĊ2N7000 AND 2N7002 (TA = 25_C UNLESS OTHERWISE NOTED) Limits 2N7000

2N7002

Symbol

Test Conditions

Typa

Turn-On Time

tON

10

tOFF

VDD = 15 V, RL = 25 W ID ^0.5 A, VGEN = 10 V, RG = 25 W

7

Turn-Off Time

7

10

Turn-On Time

tON

7

20

Turn-Off Time

tOFF

VDD = 30 V, RL = 150 W ID ^ 0.2 A, VGEN = 10 V, RG = 25 W

11

20

Parameter

Min

Max

Min

Max

Unit

Switchingd

ns

SPECIFICATIONSĊVQ1000J/P AND BS170 (TA = 25_C UNLESS OTHERWISE NOTED) Limits VQ1000J/P

Parameter

Typa

Symbol

Test Conditions

Min

V(BR)DSS

VGS = 0 V, ID = 100 mA

70

60

VGS(th)

VDS = VGS, ID = 1 mA

2.1

0.8

BS170

Max

Min

2.5

0.8

Max

Unit

Static Drain-Source Breakdown Voltage Gate-Threshold Voltage

VDS = 0 V, VGS = "10 V Gate-Body Leakage

Zero Gate Voltage Drain Current On-State Drain Currentb

Drain-Source On-Resistanceb

IDSS

VDS = 25 V, VGS = 0 V

0.5 500 10

VDS = 10 V, VGS = 10 V

1

VGS = 5 V, ID = 0.2 A

4

VGS = 10 V, ID = 0.2 A

2.3

VGS = 10 V, ID = 0.3 A

2.3

5.5

4.2

7.6

TJ = 125_C gfs

Common Source Output Conductanceb

gos

mA m

0.5

A 7.5 5

VDS = 10 V, ID = 0.2 A

W

100

VDS = 10 V, ID = 0.5 A VDS =5 V, ID = 0.05 A

V

nA "10

VDS = 60 V, VGS = 0 V

rDS(on)

Forward Transconductanceb

"500

VDS = 0 V, VGS = "15 V VDS = 48 V, VGS = 0 V, TJ = 125_C

ID(on)

3

"100

TJ = 125_C

IGSS

60

100

mS

0.5

Dynamic Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

22

60

11

25

2

5

VDD = 15 V, RL = 23 W ID ^ 0.6 A, VGEN = 10 V, RG = 25 W

7

10

7

10

VDD = 25 V, RL = 125 W ID ^ 0.2 A, VGEN = 10 V, RG = 25 W

7

10

7

10

VDS =25 V, VGS = 0 V f = 1 MHz

60 pF

Switchingd Turn-On Time

tON

Turn-Off Time

tOFF

Turn-On Time

tON

Turn-Off Time

tOFF

Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v80 ms duty cycle v1%. c. This parameter not registered with JEDEC. d. Switching time is essentially independent of operating temperature. Document Number: 70226 S-04279—Rev. F, 16-Jul-01

ns

VNBF06

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11-3


2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Output Characteristics

Transfer Characteristics

1.0

1.0 6.5 V

VGS = 10, 9, 8, 7 V 0.8

0.8

6V ID – Drain Current (A)

ID – Drain Current (A)

TJ = –55_C 5.5 V 0.6 5V 0.4

4.5 V 4V

0.2

3.5 V 3V 0

1

2

3

4

5

125_C 0.4

0.2 2.5 V 2, 1 V

0.0

25_C 0.6

0.0

6

0

1

2

VDS – Drain-to-Source Voltage (V)

3

5

6

7

8

VGS – Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

Capacitance

7

60 VGS = 0 V f = 1 MHz

6

50 rDS @ 5 V = VGS

5 C – Capacitance (pF)

rDS(on) – On-Resistance ( Ω )

4

4 3

rDS @ 10 V = VGS

2

40

30 Ciss 20 Coss 10

1

Crss

0 0.0

0 0.2

0.4

0.6

0.8

0

1.0

5

ID – Drain Current (A)

15

20

25

30

35

VDS – Drain-to-Source Voltage (V)

Gate Charge

20

10

2.0

On-Resistance vs. Junction Temperature

12 VDS = 30 V 8

4

0 0

400

800

1200

1600

Qg – Total Gate Charge (pC)

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11-4

VGS = 10 V, rDS @ 0.5 A

16 rDS(on) – On-Resistance ( Ω ) (Normalized)

VGS – Gate-to-Source Voltage (V)

ID = 0.5 A

2000

2400

1.5

1.0 VGS = 5 V, rDS @ 0.05 A

0.5

0.0 –55

–30

–5

20

45

70

95

120

145

TJ – Junction Temperature (_C)

Document Number: 70226 S-04279—Rev. F, 16-Jul-01


2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

1.000

rDS(on) – On-Resistance ( Ω )

6

IS – Source Current (A)

TJ = 125_C 0.100

TJ = 25_C 0.010

5

ID = 50 mA

4

500 mA

3

2

1

0

0.001 0.0

0.2

0.4

0.6

0.8

1.0

1.2

0

1.4

2

VSD – Source-to-Drain Voltage (V)

4

6

8

10

12

14

16

18

20

VGS – Gate-to-Source Voltage (V)

Threshold Voltage 0.50 ID = 250 mA

VGS(th) – Variance (V)

0.25

–0.00

–0.25

–0.50

–0.75 –50

–25

0

25

50

75

100

125

150

Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA, BS170 Only) 1

Normalized Effective Transient Thermal Impedance

Duty Cycle = 0.5

0.2 0.1 0.1

Notes:

0.05

PDM

0.02 t1 t2 1. Duty Cycle, D =

0.01

t1 t2

2. Per Unit Base = RthJA = 156_C/W 3. TJM – TA = PDMZthJA(t)

Single Pulse 0.01 0.1

1

10

100

1K

10 K

t1 – Square Wave Pulse Duration (sec)

Document Number: 70226 S-04279—Rev. F, 16-Jul-01

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11-5


Legal Disclaimer Notice Vishay

Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000 Revision: 18-Jul-08

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2n7002-Siliconix  

Dual-In-Line Document Number: 70226 S-04279—Rev. F, 16-Jul-01 11-1 BS170 2N7000 www.vishay.com Top View Top View Top View Top View G G G 14...

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