Nanostructured III-N Solar Cells for Space Applications University of Puerto Rico, Mayaguez/NASA Human Exploration & Operations Mission Directorate
AFM images of In0.3Ga0.7N/GaN on sapphire: average grain 4.21 nm.
After the Year 3 report on the growth of InxGa1-xN and GaN by plasmaâ€“assisted metal organic chemical vapor deposition (p-MOCVD) on sapphire (0001) and their photoluminescence (PL) responses, additional samples of InxGa1-xN (x = 02, 0.3) were grown at 700oC on sapphire and uniform epilayers were achieved. Low mobility and carrier concentration were attributed to the defects probably due to the presence of oxygen (during substrate transfer) in the reaction chamber. Results were presented at the International Conference on Growth of III-N (ISGN-5) at Georgia Tech. Defects can be minimized using load-lock system. In-Ga-N-As system is expected to have higher carrier mobility and ideal band gaps (1 eV to 2.5 eV for two junction solar cells) and it is lattice matched with Ge and small lattice mismatched with Si.
Maharaj S. Tomar, Science PI, University of Puerto Rico, Mayaguez Campus
NASA EPSCoR Stimuli 2014 -15
Dr. Ravi Margasahayam, NASA Technical Monitor, Kennedy Space Center
Published on Dec 14, 2015
NASA Office of Education’s Aerospace Research & Career Development (ARCD) is pleased to release NASA EPSCoR Stimuli, a collection of univers...