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FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Features

Description

• 10.5 A, 400V, RDS(on) =

0.5 Ω @VGS = 10 V

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

• Low gate charge ( typical 28 nC) • Low Crss ( typical 85pF)

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

• Fast switching • 100% avalanche tested • Improved dv/dt capability

D ! ●

G!

TO-220

G DS

FQP Series

▲ ● ●

TO-220F

GD S

FQPF Series

!

S

Absolute Maximum Ratings Symbol

Parameter

VDSS

Drain-Source Voltage

ID

Drain Current

FQP11N40C

FQPF11N40C 400

Units V

- Continuous (TC = 25°C)

10.5

10.5 *

A

- Continuous (TC = 100°C)

6.6

6.6 *

A

42 *

A

IDM

Drain Current

VGSS

Gate-Source Voltage

EAS IAR

- Pulsed

(Note 1)

42 ± 30

V

Single Pulsed Avalanche Energy

(Note 2)

360

mJ

Avalanche Current

(Note 1)

11

A

EAR

Repetitive Avalanche Energy

(Note 1)

13.5

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

4.5

V/ns

PD

Power Dissipation (TC = 25°C) - Derate above 25°C

TJ, TSTG

Operating and Storage Temperature Range

TL

Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

135

44

W

1.07

0.35

W/°C

-55 to +150

°C

300

°C

* Drain current limited by maximum junction temperature

Thermal Characteristics Symbol

Parameter

FQP11N40C

FQPF11N40C

Units

0.93

2.86

°C/W

RθJC

Thermal Resistance, Junction-to-Case

RθCS

Thermal Resistance, Case-to-Sink Typ.

0.5

--

°C/W

RθJA

Thermal Resistance, Junction-to-Ambient

62.5

62.5

°C/W

©2005 Fairchild Semiconductor Corporation

FQP11N40C/FQPF11N40C Rev. C

1

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FQP11N40C/FQPF11N40C 400V N-Channel MOSFET

QFET


Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FQP11N40C

FQP11N40C

TO-220

--

--

50

FQPF11N40C

FQPF11N40C

TO-220F

--

--

50

Electrical Characteristics Symbol

TC = 25°C unless otherwise noted

Parameter

Test Conditions

Min.

Typ.

Max.

Units

400

--

--

V

--

V/°C

Off Characteristics BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = 250 µA

∆BVDSS/ ∆TJ

Breakdown Voltage Temperature Coefficient

ID = 250 µA, Referenced to 25°C

--

0.54

IDSS

Zero Gate Voltage Drain Current

VDS = 400 V, VGS = 0 V

--

--

1

µA

VDS = 320 V, TC = 125°C

--

--

10

µA

IGSSF

Gate-Body Leakage Current, Forward

VGS = 30 V, VDS = 0 V

--

--

100

nA

IGSSR

Gate-Body Leakage Current, Reverse

VGS = -30 V, VDS = 0 V

--

--

-100

nA

On Characteristics VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250 µA

2.0

--

4.0

V

RDS(on)

Static Drain-Source On-Resistance

VGS = 10 V, ID = 5.25 A

--

0.43

0.53

gFS

Forward Transconductance

VDS = 40 V, ID = 5.25 A

--

7.1

--

S

(Note 4)

Dynamic Characteristics Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

VDS = 25 V, VGS = 0 V, f = 1.0 MHz

--

840

1090

pF

--

250

325

pF

--

85

110

pF

--

14

40

ns

Switching Characteristics td(on)

Turn-On Delay Time

tr

Turn-On Rise Time

td(off)

Turn-Off Delay Time

tf

Turn-Off Fall Time

Qg

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

VDD = 200 V, ID = 10.5 A, RG = 25 Ω

(Note 4, 5)

VDS = 320 V, ID = 10.5 A, VGS = 10 V (Note 4, 5)

--

89

190

ns

--

81

170

ns

--

81

170

ns

--

28

35

nC

--

4

--

nC

--

15

--

nC

--

--

10.5

A

Drain-Source Diode Characteristics and Maximum Ratings IS

Maximum Continuous Drain-Source Diode Forward Current

ISM

Maximum Pulsed Drain-Source Diode Forward Current

--

--

42

A

VSD

Drain-Source Diode Forward Voltage

VGS = 0 V, IS = 10.5 A

--

--

1.4

V

trr

Reverse Recovery Time

--

290

--

ns

Qrr

Reverse Recovery Charge

VGS = 0 V, IS = 10.5 A, dIF / dt = 100 A/µs

--

2.4

--

µC

(Note 4)

Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 5.7 mH, IAS = 10.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 10.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature

FQP11N40C/FQPF11N40C Rev. C

2

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FQP11N40C/FQPF11N40C 400V N-Channel MOSFET

Package Marking and Ordering Information


Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

VGS Top :

ID, Drain Current [A]

1

10

150°C

ID, Drain Current [A]

1

10

15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V

0

10

-55°C

25°C 0

10

Notes : 1. 250µs Pulse Test 2. TC = 25°C

Notes : 1. VDS = 40V 2. 250µs Pulse Test

-1

-1

10

0

10

1

10

2

10

4

6

8

10

VGS, Gate-Source Voltage [V]

VDS, Drain-Source Voltage [V]

Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue

VGS = 10V

IDR, Reverse Drain Current [A]

RDS(ON) [Ω], Drain-Source On-Resistance

2.0

1.5

1.0

VGS = 20V 0.5 Note : TJ = 25°C

1

10

0

10

150°C Notes : 1. VGS = 0V

25°C

2. 250µs Pulse Test -1

0

5

10

15

20

25

30

35

10

40

0.2

0.4

ID, Drain Current [A]

Figure 5. Capacitance Characteristics 2000

1.2

1.4

12

Crss = Cgd

Ciss

1200

Coss

1000 800 600

VDS = 100V

10

VGS, Gate-Source Voltage [V]

1400

Capacitance [pF]

1.0

Coss = Cds + Cgd

1600

Notes ; 1. VGS = 0 V

Crss

400

2. f = 1 MHz

200 0 -1 10

0.8

Figure 6. Gate Charge Characteristics

Ciss = Cgs + Cgd (Cds = shorted)

1800

0.6

VSD, Source-Drain voltage [V]

VDS = 250V 8

VDS = 400V 6

4

2 Note : ID = 10.5A

0 0

10

1

10

FQP11N40C/FQPF11N40C Rev. C

0

5

10

15

20

25

30

QG, Total Gate Charge [nC]

VDS, Drain-Source Voltage [V]

3

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FQP11N40C/FQPF11N40C 400V N-Channel MOSFET

Typical Performance Characteristics


Figure 7. Breakdown Voltage Variation vs. Temperature

Figure 8. On-Resistance Variation vs. Temperature 3.0

RDS(ON), (Normalized) Drain-Source On-Resistance

BVDSS, (Normalized) Drain-Source Breakdown Voltage

1.2

1.1

1.0

Notes : 1. VGS = 0 V

0.9

2. ID = 250µA

0.8 -100

-50

0

50

100

2.5

2.0

1.5

1.0 Notes : 1. VGS = 10 V

0.5

2. ID = 5.25 A

150

0.0 -100

200

Figure 9-1. Maximum Safe Operating Area of FQP3N50C

0

50

100

10 µs

ID, Drain Current [A]

ID, Drain Current [A]

10 µs 100 µs 1 ms

1

200

Operation in This Area is Limited by R DS(on)

2

10

10

150

Figure 9-2. Maximum Safe Operating Area of FQPF3N50C

Operation in This Area is Limited by R DS(on)

2

10

-50

TJ, Junction Temperature [°C]

TJ, Junction Temperature [°C]

10 ms 100 ms DC 0

10

Notes : 1. TC = 25°C

100 µs 1

1 ms

10

10 ms 100 ms DC

0

10

Notes : 1. TC = 25°C

2. TJ = 150°C

2. TJ = 15°C

3. Single Pulse

3. Single Pulse

-1

-1

10

0

1

10

2

10

10

3

10

10

0

10

VDS, Drain-Source Voltage [V]

1

10

2

10

3

10

VDS, Drain-Source Voltage [V]

Figure 10. MaximumDrain Current 12

ID, Drain Current [A]

10

8

6

4

2

0 25

50

75

100

125

150

TC, Case Temperature [°C]

FQP11N40C/FQPF11N40C Rev. C

4

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FQP11N40C/FQPF11N40C 400V N-Channel MOSFET

Typical Performance Characteristics (Continued)


FQP11N40C/FQPF11N40C 400V N-Channel MOSFET

Typical Performance Characteristics (Continued) Figure 11-1. ransient Thermal Response Curve of FQP3N50C 10

0

0 .2 10

Z

N o te s : 1 . Z θ J C ( t) = 0 .9 3 ° C /W M a x .

0 .1

-1

2 . D u ty F a c to r , D = t 1 /t 2

0 .0 5

3 . T J M - T C = P D M * Z θ J C ( t)

0 .0 2

PDM

0 .0 1

θJC

(t), Thermal Response

D = 0 .5

s i n g le p u ls e 10

t1

-2

10

-5

10

-4

10

-3

10

-2

10

-1

t2

10

0

10

1

t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]

Zθ JC(t), Thermal Response

Figure 11-2. ransient Thermal Response Curve of FQPF3N50C

10

D = 0 .5

0

0 .2

※ N o te s : 1 . Z θ J C( t) = 2 .8 6 ℃ /W M a x . 2 . D u t y F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C( t)

0 .1 0 .0 5 10

-1

0 .0 2 0 .0 1

10

t1

s in g le p u ls e

-2

10

PDM

-5

10

-4

10

-3

10

-2

10

-1

t2

10

0

10

1

t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]

FQP11N40C/FQPF11N40C Rev. C

5

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FQP11N40C/FQPF11N40C 400V N-Channel MOSFET

Gate Charge Test Circuit & Waveform

VGS

Same Type as DUT

50K立 200nF

12V

Qg

10V

300nF

VDS

VGS

Qgs

Qgd

DUT 3mA

Charge

Resistive Switching Test Circuit & Waveforms

VDS RG

RL

VDS

90%

VDD

VGS

VGS

DUT

10V

10%

td(on)

tr

td(off)

t on

tf t off

Unclamped Inductive Switching Test Circuit & Waveforms

BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD

L VDS BVDSS IAS

ID RG

VDD

tp

FQP11N40C/FQPF11N40C Rev. C

VDS (t)

VDD

DUT

10V

ID (t)

tp

6

Time

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FQP11N40C/FQPF11N40C 400V N-Channel MOSFET

Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

+ VDS _

I SD L Driver RG

VGS

VGS ( Driver )

Same Type as DUT

VDD

• dv/dt controlled by RG • ISD controlled by pulse period

Gate Pulse Width D = -------------------------Gate Pulse Period

10V

IFM , Body Diode Forward Current

I SD ( DUT )

di/dt

IRM Body Diode Reverse Current

VDS ( DUT )

Body Diode Recovery dv/dt

VSD

VDD

Body Diode Forward Voltage Drop

FQP11N40C/FQPF11N40C Rev. C

7

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TO-220 4.50 ±0.20 2.80 ±0.10 (3.00)

+0.10

1.30 –0.05

18.95MAX.

(3.70)

ø3.60 ±0.10

15.90 ±0.20

1.30 ±0.10

(8.70)

(1.46)

9.20 ±0.20

(1.70)

9.90 ±0.20

1.52 ±0.10

10.08 ±0.30

(1.00)

13.08 ±0.20

)

(45°

1.27 ±0.10

0.80 ±0.10 2.54TYP [2.54 ±0.20]

+0.10

0.50 –0.05

2.40 ±0.20

2.54TYP [2.54 ±0.20]

10.00 ±0.20

Dimensions in Millimeters

FQP11N40C/FQPF11N40C Rev. C

8

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FQP11N40C/FQPF11N40C 400V N-Channel MOSFET

Mechanical Dimensions


(Continued)

3.30 ±0.10

TO-220F 10.16 ±0.20

2.54 ±0.20

ø3.18 ±0.10

(7.00)

(1.00x45°)

15.87 ±0.20

15.80 ±0.20

6.68 ±0.20

(0.70)

0.80 ±0.10 ) 0°

(3

9.75 ±0.30

MAX1.47

#1 +0.10

0.50 –0.05

2.54TYP [2.54 ±0.20]

2.76 ±0.20

2.54TYP [2.54 ±0.20]

9.40 ±0.20

4.70 ±0.20

0.35 ±0.10

Dimensions in Millimeters

FQP11N40C/FQPF11N40C Rev. C

9

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FQP11N40C/FQPF11N40C 400V N-Channel MOSFET

Mechanical Dimensions


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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification

Product Status

Definition

Advance Information

Formative or In Design

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. I15

10 FQP11N40C/FQPF11N40C Rev. C

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FQP11N40C/FQPF11N40C 400V N-Channel MOSFET

TRADEMARKS


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