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2SA1568

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4065)

A

IB

–3

mA

–60min

V

hFE

VCE=–1V, IC=–6A

50min

A

VCE(sat)

IC=–6A, IB=–0.3A

–0.35max

IECO=–10A

–2.5max

V

16.9±0.3

–60max

V

35(Tc=25°C)

W

VFEC

Tj

150

°C

fT

VCE=–12V, IE=0.5A

40typ

MHz

–55 to +150

°C

COB

VCB=–10V, f=1MHz

330typ

pF

Tstg

3.9

PC

1.35±0.15 1.35±0.15

5

–1

–2

–3

–4

–5

0 –7 –10

–6

–100

Collector-Emitter Voltage V C E (V)

–1000

(V C E =–1V) 300 125˚C D C Cur r ent Gai n h F E

100

25˚C –30˚C

100

10

10

2 –0.02

–10

–0.1

Collector Current I C (A)

–1

–10

p) Tem

0.3

se

1

10

1000

s

ite he

150x150x2

at si nk

Without Heatsink Natural Cooling

20

fin

–0.5

Natural Cooling Silicone Grease Heatsink: Aluminum in mm

30

In

Maximu m Power Dissi pation P C (W)

0m

–1

–0.05 –3

100

ith

24

0.5

W

Collector Cur rent I C (A)

DC

s

–5

s

–0.1

10

–1.2

P c – T a Derating

m

20

–1.0

Time t(ms)

10

10

Typ

30

–0.8

35 1m

40

–0.6

1

Safe Operating Area (Single Pulse)

–10

Emitter Current I E (A)

–0.4

4

–30

1

–0.2

θ j-a – t Characteristics

(V C E =–12V)

50

0

Collector Current I C (A)

f T – I E Characteristics (Typical)

Cut- off Fr equ ency f T (M H Z )

DC Curr ent Gain h F E

Typ

0 0.05 0.1

0

–3000

h FE – I C Temperature Characteristics (Typical)

300

–1

–4

Base-Emittor Voltage V B E (V)

(V C E =–1V)

–0.1

–6

Base Current I B (mA)

h FE – I C Characteristics (Typical)

2 –0.02

–8

–2

Transient Thermal Resistance

Collector Current I C (A)

I B=

0

A

0

–0.5

–9A

–10mA

–2

–3 A

–20mA

–1.0

–1A

–4

–10

–6A

–40mA

(V C E =–1V)

–12

–1.4

–12

–60mA

I C – V BE Temperature Characteristics (Typical)

I C=

–8

–6

0.2typ

˚C

–1 00 mA

–2

–10

Collector-Emitter Saturation Voltage V C E (s a t) (V )

0mA

00

mA

–15

0.4typ

V CE ( sat ) – I B Characteristics (Typical)

I C – V CE Characteristics (Typical) –12

0.4typ

120

–120

(Ca

–10

B C E

125

–6

4

Weight : Approx 2.0g a. Type No. b. Lot No.

tf (µs)

tstg (µs)

Collector Current I C (A)

–24

ton (µs)

IB2 (mA)

IB1 (mA)

VBB2 (V)

VBB1 (V)

2.4±0.2

2.2±0.2

θ j - a (˚C /W)

IC (A)

RL (Ω)

0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54

2.54

■Typical Switching Characteristics (Common Emitter) VCC (V)

ø3.3±0.2

a b

mp)

IC

VEB=–6V IC=–25mA

e Te

V(BR)CEO

4.2±0.2 2.8 c0.5

(Cas

IEBO

V

10.1±0.2

4.0±0.2

V

–6 –12 +

µA

0.8±0.2

–60

VEBO

–100max

mp)

VCEO

VCB=–60V

–30˚C

ICBO

e Te

V

Unit

(Cas

–60

2SA1568

25˚C

VCBO

External Dimensions FM20 (TO220F)

(Ta=25°C)

Conditions

±0.2

Symbol

Unit

C

Application : DC Motor Driver, Chopper Regulator and General Purpose

■Electrical Characteristics

2SA1568

Symbol

Equivalent curcuit

8.4±0.2

■Absolute maximum ratings (Ta=25°C)

B

13.0min

Built-in Diode at C–E Low VCE (sat)

E

( 250 Ω )

100x100x2 10 50x50x2 Without Heatsink

–5

–10

–50

Collector-Emitter Voltage V C E (V)

–100

2 0

0

25

50

75

100

125

Ambient Temperature Ta(˚C)

150


2SA1568 - Silicon PNP Epitaxial Planar Transistor - Manual Sonigate