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Ordering number:ENN6283

NPN Triple Diffused Planar Silicon Transistor

2SC5388 High-Voltage Switching Applications Features

Package Dimensions

· High speed (Adoption of MBIT process). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · On-chip damper diode.

unit:mm 2039D [2SC5388] 16.0

3.4

5.6

2.0

21.0

22.0

5.0 8.0

3.1

2.0

20.4

4.0

2.8 2.0 1.0

0.6 2

1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PML

3

3.5

1

5.45

Specifications

5.45

Absolute Maximum Ratings at Ta = 25˚C Parameter

Symbol

Conditions

Ratings

Unit

Collector-to-Base Voltage

VCBO

1500

V

Collector-to-Emitter Voltage

VCEO VEBO

700

V

5

V

IC

5

A

ICP

10

A

IB

1

A

3.0

W

Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation

PC

Junction Temperature

Tj

Storage Temperature

Tstg

50

W

150

˚C

–55 to +150

˚C

Tc=25˚C

Electrical Characteristics at Ta = 25˚C Parameter

Symbol

Conditions

Ratings min

typ

max

Unit

Collector Cutoff Current

ICBO

VCB=700V, IE=0

0.1

mA

Emitter Cutoff Current

IEBO

600

mA

hFE1

VEB=5V, IC=0 VCE=5V, IC=1A

100

230

hFE2

VCE=5V, IC=5A

50

150

DC Current Gain

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 10700TS (KOTO) TA-1738 No.6283–1/4


2SC5388 Continued from preceding page. Parameter

Symbol

Collector-to-Emitter Sustain Voltage Base-to-Emitter Saturation Voltage

VCEO(sus) IC=100mA, IB=0 VCE(sat) IC=5A, IB=0.5A VBE(sat) IC=5A, IB=0.5A

Collector-to-Base Breakdown Voltage

V(BR)CBO IC=1mA, IE=0

Collector-to-Emitter Saturation Voltage

Diode Forward Voltage Fall Time

VF tf

Storage Time

tstg

Ratings

Conditions

min

typ

Unit

max

700

V 1.5

V

2.0

V

1500

V

IEC=5A

2.0

V

IC=5A, IB1=0.5A, IB2=–2.5A, VCC=200V, RL=40Ω IC=5A, IB1=0.5A, IB2=–2.5A, VCC=200V, RL=40Ω

0.8

µs

3

µs

Switching Time Test Circuit OUTPUT

IB1

PW=20µs D.C.≤1%

T.U.T

IB2

INPUT RB RL

VR R1

R2

+

+

100µF

470µF

VCC=200V

VBE=--5V

2.5 2.0 1.5

6 5 4 3 2

1.0

IB=0

0.5

1

5mA

0

0 0

1

2

3

4

5

6

7

8

9

Collector-to-Emitter Voltage, VCE – V

100 7 5 3 2

3 2 3

5

7

1.0

0.6

2

3

Collector Current, IC – A

5

7

10 IT00793

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

IT00792

VCE(sat) -- IC

10

°C 120 Ta= C 25° °C 0 --4

2

0.4

Base-to-Emitter Voltage, VBE – V

VCE=5V

10 7 5

1.0 0.1

0.2

IT00791

IC / IB=20

7

Collector-to-Emitter Saturation Voltage, VCE (sat) – V

3 2

0

10

hFE -- IC

1000 7 5

DC Current Gain, hFE

7

C

10mA

8

°C

A

20m

--40

3.0

VCE=5V 9

25°

3.5

A 40m A 30m

Ta= 12

4.0

90mA 80mA 70mA 60mA 50mA

IC -- VBE

10

Collector Current, IC – A

Collector Current, IC – A

4.5

IC -- VCE

100mA

5.0

0°C

50Ω

5 3 2

25°C

Ta=--40°C

1.0 7 5

120°C

3 2 0.1 0.1

2

3

5

7

1.0

2

3

Collector Current, IC – A

5

7 10 IT00794

No.6283–2/4


2SC5388 SW Time -- IC

10

3

tstg

1.0 7 5 3

tf

2

0.1 0.1

2

3

5

7

2

1.0

3

5

Collector Current, IC – A 3 2

10 IT00795

P C =5

3 2

0W

P T= 10 0µ 30 s 0µ s

1m

s

10 s

C

m

D

1.0 7 5

op er

3 2

at n io

Tc=25°C Single pulse

3 2 2

3

5

7 10

1.0 7 5

tf 3 2

2

3

5

7

2

--1.0

3

5

Base Current, IB2 – A

7 --10 IT00796

R.B A S O L=500µH IB2=--2A Tc=25°C Single pulse

ICP

10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2

2

3

5

7 100

2

3

5

Collector-to-Emitter Voltage, VCE – V

7 1000 IT00797

5

7

2

100

3

5

7 1000

2

3

Collector-to-Emitter Voltage, VCE – V

PC -- Ta

4.0

5

IT00798

PC -- Tc

70

3.5

60

Collector Dissipation, PC – W

Collector Dissipation, PC – W

tstg

2

3 2

IC

0.1 7 5

3

5

ICP

10 7 5

5

0.1 --0.1

7

F.B A S O

5

Collector Current, IC – A

Switching Time, SW Time – µs

5

IC=5A IB1=0.5A R load

7

Collector Current, IC – A

Switching Time, SW Time – µs

7

2

SW Time -- IB2

10

IC / IB1=10 IB2 / IB1=5 R load

3.0 2.5

No

2.0

he

at

sin

k

1.5 1.0

50

40

30

20

10

0.5

0

0 0

20

40

60

80

100

120

Ambient Temperature, Ta – °C

140

160

IT00799

0

20

40

60

80

100

120

Case Temperature, Tc – °C

140

160

IT00800

No.6283–3/4


2SC5388

Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2000. Specifications and information herein are subject to change without notice. PS No.6288–4/4


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