Page 1

HiPerFASTTM IGBT ISOPLUS247TM

VCES IC25 VCE(sat) tfi typ

IXGR 40N60B2 IXGR 40N60B2D1

C2-Class High Speed IGBTs (Electrically Isolated Back Surface)

= 600 V = 75 A = 1.9 V = 82 ns

Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Preliminary Data Sheet

D1

Symbol

Test Conditions

Maximum Ratings

VCES

TJ = 25°C to 150°C

600

V

VCGR

TJ = 25°C to 150°C; RGE = 1 MΩ

600

V

VGES

Continuous

±20

V

VGEM

Transient

±30

V

IC25

TC = 25°C

60

A

IC110

TC = 110°C

33

A

IF110

TC = 110°C

25

A

ICM

TC = 25°C, 1 ms

200

A

SSOA (RBSOA)

VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ ≤ 600 V

PC

TC = 25°C

(IXGR40N60B2D1)

ICM = 80

A

167

W

-55 ... +150

°C

TJM

150

°C

Tstg

-55 ... +150

°C

2500

V

300

°C

G

50/60 Hz RMS, t = 1m

E

(ISOLATED TAB)

C = Collector,

Features

z z z z

DCB Isolated mounting tab Meets TO-247AD package Outline High current handling capability Latest generation HDMOSTM process MOS Gate turn-on - drive simplicity

Applications Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s

z

Weight

6

g

z

z z z

Symbol

VGE(th)

C

G = Gate, E = Emitter

z

TJ

VISOL

ISOPLUS247 (IXGR) E153432

Test Conditions

Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max.

= 250 µA, VCE = VGE

IC

ICES

VCE = VCES VGE = 0 V

IGES

VCE = 0 V, VGE = ±20 V

VCE(sat)

IC

= 30 A, VGE = 15 V

© 2004 IXYS All rights reserved

3.0 TJ = 25°C TJ = 150°C

TJ = 25°C

5.0

Advantages z

V

z

50 1

µA mA

±100

nA

1.9

V

Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers

z

Easy assembly High power density Very fast switching speeds for high frequency applications

DS99162A(05/04)


IXGR 40N60B2 IXGR 40N60B2D1 Symbol

gfs

Test Conditions

Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max.

IC = 30 A; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %

20

Cies Coes

VCE = 25 V, VGE = 0 V, f = 1 MHz

36

S

2560

pF

210

pF

54

pF

100

nC

15

nC

36

nC

18

ns

20

ns

Cres Qg Qge

IC = 30 A, VGE = 15 V, VCE = 300 V

Qgc td(on) tri

Inductive load, TJ = 25°°C

td(off)

IC = 30 A, VGE = 15 V VCE = 400 V, RG = 3.3 Ω

tfi

130

200

ns

82

150

ns

Eoff

0.4

0.8 mJ

td(on)

18

ns

tri Eon td(off) tfi

Inductive load, TJ = 125°°C IC = 30 A, VGE = 15 V VCE = 400 V, RG = 3.3 Ω

Eoff

20

ns

0.3

mJ

240

ns

150

ns

1.10

mJ

RthJC

ISOPLUS 247 Outline

0.75 K/W

RthCK

0.15

Reverse Diode (FRED)

K/W

Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max.

Symbol

Test Conditions

VF

IF = 30 A, VGE = 0 V, Pulse test t ≤ 300 µs, duty cycle d ≤ 2 %

IRM t rr

IF = 30 A, VGE = 0 V, -diF/dt =100 A/µs, TJ = 100°C VR = 100 V TJ = 100°C 100 IF = 1 A; -di/dt = 100 A/µs; VR = 30 V 25

TJ =150°C

0.9

RthJC

1.6 2.5

V V

4

A ns ns

1.1 K/W

IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents:

4,835,592 4,850,072 4,881,106

4,931,844 5,017,508 5,034,796

5,049,961 5,063,307 5,187,117

5,237,481 5,381,025 5,486,715

6,162,665 6,259,123 B1 6,306,728 B1

6,404,065 B1 6,534,343 6,583,505

6,683,344 6,710,405B2 6,710,463

6,727,585


IXGR 40N60B2 IXGR 40N60B2D1 Fig. 1. Output Characte ristics @ 25 Deg. C 60

9V

VGE = 15V 13V

180

7V

30 20

9V 120 90

7V

60

10

30

5V

5V

0

0 0.5

1

1.5

2

2.5

0

3

1

2

Fig. 3. Output Characteristics @ 125 Deg. C

5

6

7

1.4

VGE = 15V 13V 11V

50

4

Fig. 4. De pende nce of V CE(sat) on Tem perature

9V

V GE = 15V

1.3

V C E (sat)- Normalized

60

3

V C E - Volts

V C E - Volts

I C - Amperes

11V

150

40

I C - Amperes

I C - Amperes

210

VGE = 15V 13V 11V

50

Fig. 2. Extended Output Characte ristics @ 25 de g. C

7V

40 30 20 10

5V

1.2

I C = 60A

1.1 1.0 0.9

I C = 30A

0.8 0.7

0

I C = 15A

0.6 0.5

1

1.5

2

2.5

3

-50

-25

V CE - Volts

0

25

50

75

100

125

150

TJ - Degrees Centigrade

Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage

Fig. 6. Input Adm ittance

4

180 TJ = 25ºC

3.5

150

VC E - Volts

2.5

I C - Amperes

I C = 60A 30A 15A

3

2 1.5

120 90 60 TJ = 125ºC 25ºC -40ºC

30

1

0 5

6

7

8

9

10 11 12

V G E - Volts © 2004 IXYS All rights reserved

13 14 15 16 17

3

4

5

6

7

V G E - Volts

8

9

10


IXGR 40N60B2 IXGR 40N60B2D1 Fig. 8. Dependence of Turn-Off Energy on RG

Fig. 7. Transconductance 60

3

40

I C = 60A

2.4

E off - milliJoules

g f s - Siemens

2.7

TJ = -40ºC 25ºC 125ºC

50

30 20

TJ = 125ºC VGE = 15V VCE = 400V

2.1 1.8 1.5

I C = 30A

1.2 0.9

10

0.3

0 0

30

60

90

120

150

3

180

6

12

15

18

21

24

R G - Ohms

Fig. 9. Dependence of Turn-Off Energy on Ic

Fig. 10. Dependence of Turn-Off Energy on Tem perature

27

30

2.7 R G = 3.3Ω VGE = 15V VCE = 400V

2.1

R G = 3.3Ω VGE = 15V VCE = 400V

2.4 2.1

E off - milliJoules

2.4

1.8 1.5 TJ = 125ºC

1.2 0.9 0.6

I C = 60A

1.8 1.5 1.2

I C = 30A

0.9 0.6

TJ = 25ºC

0.3

0.3

0

I C = 15A

0 15

20

25

30

35

40

45

50

55

60

25

35

I C - Amperes

45

55

65

75

85

95

Fig. 12. Dependence of Turn-Off Sw itching Tim e on Ic 300

600

td(off) tfi - - - - - -

500

TJ = 125ºC VGE = 15V VCE = 400V

450 400 350 300

I C = 15A

250

I C = 30A

I C = 60A

200

td(off) tfi - - - - - -

275

Switching Time - nanosecond

550

105 115 125

TJ - Degrees Centigrade

Fig. 11. Dependence of Turn-Off Sw itching Tim e on RG

Switching Time - nanosecond

9

I C - Amperes

2.7

E off - MilliJoules

I C = 15A

0.6

150 100

R G = 3.3Ω VGE = 15V VCE = 400V

250 225 200

TJ = 125ºC

175 150 125 TJ = 25ºC

100 75

3

6

9

12

15

18

R G - Ohms

21

24

27

30

IXYS reserves the right to change limits, test conditions, and dimensions.

15

20

25

30

35

40

I C - Amperes

45

50

55

60


IXGR 40N60B2 IXGR 40N60B2D1 Fig. 13. Dependence of Turn-Off Sw itching Tim e on Tem perature

Fig. 14. Gate Charge

275

15

td(off) tfi - - - - - -

200 175

I C = 15A

150

I C = 30A

125

VCE = 300V I C = 30A I G = 10mA

12

R G = 3.3Ω VGE = 15V VCE = 400V

225

VG E - Volts

Switching Time - nanosecond

250

I C = 60A

9

6

3

100 0

75 25

35

45

55

65

75

85

95

TJ - Degrees Centigrade

105 115 125

0

10

20

30

40

50

60

70

80

90

100

Q G - nanoCoulombs

Fig. 15. Capacitance 10000

Capacitance - p F

f = 1 MHz

C ies

1000

C oes 100

C res 10 0

5

10

15

20

25

V C E - Volts

30

35

40

F ig . 13. M aximu m Tran sien t Th ermal R esistan ce 0.8 0.7

R (th) J C - (ºC/W)

0.6 0.5 0.4 0.3 0.2 0 .1 0 1

10

10 0

Puls e W idth - millis ec onds © 2004 IXYS All rights reserved

100 0


IXGR 40N60B2 IXGR 40N60B2D1 60 A

1000 nC

50 IF

800 Qr 600

30

25

IF= 60A IF= 30A IF= 15A

IRM 20 15

TVJ=100°C

400

20

10

TVJ=25°C

200

10 0

TVJ= 100°C VR = 300V

A

IF= 60A IF= 30A IF= 15A

40

TVJ=150°C

30

TVJ= 100°C VR = 300V

0

1

2

5

0 100

3 V

A/µs 1000 -diF/dt

VF

Fig. 17 Forward current IF versus VF

Fig. 18 Reverse recovery charge Qr versus -diF/dt 90

2.0

Kf

IF= 60A IF= 30A IF= 15A

IRM

600 A/µs 800 1000 -diF/dt

400

1.00

TVJ= 100°C IF = 30A

µs

tfr 0.75

VFR tfr

80

1.0

200

Fig. 19 Peak reverse current IRM versus -diF/dt

V VFR 15

trr

1.5

0

20

TVJ= 100°C VR = 300V

ns

0

10

0.50

5

0.25

70 0.5

0.0

Qr

0

40

80

120 °C 160

60

0

200

TVJ

400

600

800 1000 A/µs

0

0

200

400

-diF/dt

Fig. 20 Dynamic parameters Qr, IRM versus TVJ

Fig. 21 Recovery time trr versus -diF/dt

10

0.00 600 A/µs 800 1000 diF/dt

Fig. 22 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation:

K/W

i

1

1 2 3 4

ZthJC 0.1

Rthi (K/W)

ti (s)

0.436 0.482 0.117 0.115

0.0055 0.0092 0.0007 0.0418

0.01

0.001

0.0001 0.00001

DSEP 2x31-06B

0.0001

0.001

0.01

0.1

s t

1

IXYS reserves the right to change limits, test conditions, and dimensions.

906

Fig. 23 Transient thermal resistance junction to case

Transistor IGBT IXGR40N60B2D1 - Manual Sonigate  

G = Gate, C = Collector, E = Emitter Very fast switching speeds for high frequency applications Advantages ISOPLUS247 (IXGR) Easy assembly E...

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