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IHW20N120R3 IH-series

Reverse conducting IGBT with monolithic body diode C

Features: • Powerful monolithic body diode with low forward voltage designed for soft commutation only • TrenchStop® technology applications offers: - very tight parameter distribution - high ruggedness, temperature stable behavior - low VCEsat - easy parallel switching capability due to positive temperature coefficient in VCEsat • Low EMI • Qualified according to JEDEC J-STD-020 and JESD-022 for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/

G

E

Applications: • Inductive cooking

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Maximum ratings Parameter

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Symbol

Value

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Unit

,

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IHW20N120R3 IH-series Thermal Resistance Parameter Characteristic

Symbol Conditions

Max. Value

Unit

/P 3Q "4!2 " :$:3!%( 7 I6%(3$1% (!:

RS

.

TU*

5$18 3Q "4!2 " :$:3!%( 7 I6%(3$1% (!:

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Parameter

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Value Unit min. typ. max.

Symbol Conditions

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YZ

[

F

7

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2

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IHW20N120R3 IH-series K@$3(Q$%&

Q!"!(3 "$:3$(7 %86(3$

Parameter

f1!87 !3

Value Unit min. typ. max.

Symbol Conditions

IGBT Characteristic 6"% 1?? 8 2! 3$4

3]

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Symbol Conditions

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122 (31" (6"" %3 !: ! ?6%(3$1% 1? (!: 3 4 "!36" E B F r, 7 l,

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IHW20N120R3 IH-series 60

60 F

50

40 30

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175


IHW20N120R3 IH-series

3g H]] 3]

0

c$&6"

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20

m

30

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IHW20N120R3 IH-series 15.0 . >

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80

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IHW20N120R3 IH-series 40

3 , . -

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A7 c0 *- 5 m

X+ o-p

A7 c0 *- 5 0f -/X o p

30

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10

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100

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175


IHW20N120R3 IH-series

PG- TO247-3-21 /-41 MIN 4.90 2.27 1.85 1.07 1.90 1.90 2.87 2.87 0.55 20.82 16.25 1.05 15.70 13.10 3.68 1.68 derived from Z8B00003327 17-12-2007 03

10

19.80 4.17 3.50 5.49 6.04

5.44 3

MAX 5.16 2.53 2.11 1.33 2.41 2.16 3.38 3.13 0.68 21.10 17.65 1.35 16.03 14.15 5.10 2.60

MIN 0.193 0.089 0.073 0.042 0.075 0.075 0.113 0.113 0.022 0.820 0.640 0.041 0.618 0.516 0.145 0.066

20.31 4.47 3.70 6.00 6.30

0.780 0.164 0.138 0.216 0.238

0.214 3

MAX 0.203 0.099 0.083 0.052 0.095 0.085 0.133 0.123 0.027 0.831 0.695 0.053 0.631 0.557 0.201 0.102 0.799 0.176 0.146 0.236 0.248


IHW20N120R3 IH-series

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IHW20N120R3 IH-series Published by Infineon Technologies AG 81726 Munich, Germany 81726 Mßnchen, Germany Š 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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IHW20N120R3 IGBT+ DIODE,1200V,20A,TO247 - Manual Sonigate  

5$18?1"@!"8(6""%372$4$389 , 16%3$%&amp;31"M67 :("@ !N$4641?416%3$%&amp;"1(:::O &gt; +4 '1@"8$::$!3$1% '1@"8$::$!3$1% , ' HH . . &g...