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M/A-COM Technology Solutions

G a N R F Power P roduc ts

Frequency Pout (MHz) (W)

Part Number GaN Transistors

Power Amplifier Line-Ups: 2.7 - 3.1 GHz

1.2 - 1.4 GHz

2X 180 W Device

1650 W

30 W

340 W 22 dB gain

30 W

3.1 - 3.5 GHz 4x 450 W Pallet

10 W

120 W

120 W 25 dB gain

MAGX-000035-010000 MAGX-000035-030000 MAGX-000035-100000 MAGX-000912-125L00 MAGX-000912-250L00 MAGX-001214-125L00 MAGX-001214-250L00 MAGX-001220-100L00 MAGX-002731-030L00 MAGX-002731-100L00 MAGX-002731-180L00 MAGX-003135-030L00 MAGX-003135-120L00 MAGX-003135-180L00

30-3500 30-3500 30-3500 960-1215 960-1215 1200-1400 1200-1400 1200-2000 2700-3100 2700-3100 2700-3100 3100-3500 3100-3500 3100-3500

10 30 100 125 250 125 250 100 30 100 180 30 120 180

1200-1400 2700-3100

450 330

GaN Pallets MAPG-001214-450L00 MAPG-002731-330L00

macomtech.com


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GaN RF Power Products

M/A-COM Technology Solutions continues to grow its gallium nitride (GaN) RF power product line. Our product portfolio leverages M/A-COM Tech's more than 60-year heritage of providing both standard and custom solutions to meet the most demanding customer needs. Our GaN on Silicon Carbide (SiC) products, offered as transistors and pallets, utilize a 0.5 micron HEMT process and exhibit excellent RF performance with respect to power, gain, gain flatness, efficiency, and ruggedness over wide operating bandwidths. Additional products for C-, X- and Ku-band are being developed and will be released in 2012. Applications specific and custom assemblies are also available.

Why choose GaN? GaN RF power devices combine the best properties of two technologies: high power handling and high-voltage operation of silicon LDMOS devices, with the high-frequency performance of GaAs. GaN also offers improved linearity and efficiency performance when compared to Si LDMOS. GaN features and benefits include: • • • •

High breakdown voltage • Easy to broadband Superior power density • High frequency operation High RF gain and efficiency • Excellent thermal conductivity properties M/A-COM Tech's Smart Pallet solutions provide enhanced performance and control

Turn to M/A-COM Tech today and in the future for superior performance, high power GaN solutions. Learn more at macomtech.com

MAGX-001220-100L00: 1.2-2.0 GHz Transistor

MAGX-000912-250L00: 960-1215 MHz Transistor

Features

Features

• Pout: 100 Watts • Pulse/Duty: 500 µs/10% • Power Gain:: 14 dB

• Pout: 250 Watts • Pulse/Duty: 128 µs/10% • Power Gain: 18 dB

Pout vs Pin at 500 µs,, 10% ((50 V))

140

Pout vs Pin at 128 µs, 10% (50 V)

350

120

300

80

Samples Available

60 40

1.2 GHz 1.6 GHz 2.0 GHz

20

Pout (W)

Pout (W)

100 250

100 0

1

2

3

4

5

6

960 MHz 1030 MHz 1090 MHz 1215 MHz

150

0

Samples Available

200

7

0

1.5

2

2.5

3

3.5

4

4.5

5

Pin (W)

Pin (W)

MAGX-001214-250L00: 1.2-1.4 GHz Transistor

MAPG-001214-450L00: 1.2-1.4 GHz Pallet

Features

Features

• Pout: 250 Watts • Pulse/Duty: 300 µs/10% • Power Gain:: 18 dB

• • • •

Pout vs Pin at 300 µs, 10% (50 V)

300

Samples Available

Pout: 450 Watts Pulse/Duty: 300 µs/10% Power Gain: 17 dB 50 Ω Pout vs Pin at 300 µs, 10% (50 V)

550 500

250

150

Samples Available

100 1.2 GHz 1.3 GHz 1.4 GHz

50 0

0

1

2

3

Pin (W)

4

5

Pout (W)

Pout (W)

450 200

400 350 300 250

1.2 GHz 1.3 GHz 1.4 GHz

200 6

150

2

4

6

8

Pin (W)

10

14

16


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GaN RF Power Products

We are pleased to provide samples for our GaN products. These samples are generally available two weeks after the request is submitted. We also offer test fixtures for our power products. These are available on a limited basis. Contact your local sales representative to learn more or request a sample or test fixture.

MAGX-000035-030000: 30-3500 MHz Transistor

MAGX-000035-100000: 30-3500 MHz Transistor

Features

Features

• Pout: 30 Watts • Power Gain: 12-30 dB • Unmatched

• Pout: 100 Watts • Power Gain: 12-30 dB • Unmatched

CW Output Power (P2dB) vs frequency freque ency ency

freque CW Output Power (P2dB) vs frequency ency ency

(single point optomized)

60

120

50

100

30

Samples Available

20 10

Pout (W)

40

Pout (W)

(single point optomized)

140

80 60

Samples Available

40 20

0 30

100

500

1500

0

3000

30

100

500

1500

3000

Pin (W)

Pin (W)

MAGX-003135-120L00: 3.1-3.5 GHz Transistor

MAGX-003135-180L00: 3.1-3.5 GHz Transistor

Features

Features

• Pout: 120 Watts • Pulse/Duty: 300 µs/10% • Power Gain: 12 dB

• Pout: 180 Watts • Pulse/Duty: 300 µs/10% • Power Gain: 11 dB

Pout vs Pin at 300 µs, 10% (50 V)

160

Pout vs Pin at 300 µs, 10% (50 V)

250 200

Samples Available

80 3.1 GHz 3.3 GHz 3.5 GHz

Pout (W)

Pout (W)

120

2

4

6

8

10

12

0

14

Samples Available

100 3.1 GHz 3.3 GHz 3.5 GHz

50

40 0

150

0

6

10

Pin (W)

14

18

Pin (W)

MAGX-002731-180L00: 2.7-3.1 GHz Transistor

MAPG-002731-330L0S: 2.7-3.1 GHz Pallet

Features

Features

• Pout: 180 Watts • Pulse/Duty: 500 µs/10% • Power Gain: 11.5 dB

• Pout: 330 Watts • Pulse/Duty: 300 µs/10% • Power Gain: 11 dB • 50 Ω

Pout vs Pin at 500 µs, 10% (50 0V V))

220

400 360

180

140 120

Samples Available

100 80

2.7 GHz 2.9 GHz 3.1 GHz

60

Pout (W)

320

160

Pout (W)

Pout vs Pin at 300 µs, 10%

440

200

40

Samples Available

280 240 200 160 120 40

0

2

4

6

8

10

12

Pin (W)

14

16

18

20

22

2.7 GHz 2.9 GHz 3.1 GHz

80 2

7

12

17

22

27

32

Pin (W)

Detailed specifications for our standard parts can be found quickly on our website at macomtech.com by typing the part number into the search box. All specifications are subject to change.


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GaN RF Power Products

Future releases include the following GaN transistors and pallets:

GaN Transistors Frequency (GHz)

Pout (W)

Pulse/ Duty

Gain (dB)

MAGX-020512-025000

20 - 512

25

CW

19

MAGX-020512-050000

20 - 512

50

CW

19

MAGX-000035-060000

30 - 3500

60

CW

12 - 30

MAGX-000035-150000

30 - 3500

150

CW

12 - 30

MAGX-001318-140000

1350 - 1850

140

CW

14

MAGX-002735-030000

2700 - 3500

30

500 µs/10%

13

MAGX-002735-100000

2700 - 3500

100

500 µs/10%

13

MAGX-002735-180000

2700 - 3500

180

500 µs/10%

13

Part Number

For more details, contact your M/A-COM Tech sales office or visit macomtech.com

Quality and Reliability

About M/A-COM Technology Solutions Inc.

The goal of M/A-COM Technology Solutions is to continually deliver effective, high quality products and services that meet our customers’ and internal operations’ needs in terms of delivery, performance, safety and value.

M/A-COM Technology Solutions (macomtech.com) is a leading supplier of high performance analog semiconductor solutions for use in radio frequency (RF), microwave, and millimeter wave applications. Recognized for its broad portfolio of products, M/A-COM Tech serves diverse markets including CATV, wireless infrastructure, optical communications, aerospace and defense, automotive, industrial, medical, and mobile devices. M/A-COM Tech builds on more than 60 years of experience designing and manufacturing innovative product solutions for customers worldwide.

Process controls are implemented such that the tasks are performed properly the first time, so that products and services meet established, agreed-to requirements. It is the personal responsibility of every employee to ensure quality, customer satisfaction, continual improvement, maintenance of our quality management system and compliance with customer and regulatory requirements.

Headquartered in Lowell, Massachusetts, M/A-COM Tech is certified to the ISO9001 international quality standard and ISO14001 environmental management standard. M/A-COM Tech has design centers and sales offices throughout North America, Europe, Asia and Australia. Copyright © 2011, M/A-COM Technology Solutions Inc. All Rights Reserved. This brochure is provided by M/A-COM Technology Solutions as a service to its customers and may be used for informational purposes only by the customer. M/A-COM Technology Solutions assumes no responsibility for errors or omissions in the brochure. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to change any specification, designs, models and other information contained herein without notice. M/A-COM Technology Solutions makes no commitment to update the information and shall have no responsibility whatsoever for conflicts, incompatibilities, or other difficulties arising from future changes to its documentation, products, specifications and product descriptions. The First Name in Microwave® is a registered trademark of M/A-COM Technology Solutions Holdings, Inc.

M/A-COM Technology Solutions Inc. Lowell, Massachusetts 01851 North America 800.366.2266 • Europe +353.21.244.6400 India +91.80.43537383 • China (Shanghai) +86.21.5108.6464 macomtech.com MTS-L-0911024

GaN RF PowerProducts  

GaN RF Power Products

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