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2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)

2SK3569 Switching Regulator Applications • • • •

Unit: mm

Low drain-source ON resistance: RDS (ON) = 0.54Ω (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 μA (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

Maximum Ratings (Ta = 25°C) Characteristics

Symbol

Rating

Unit

Drain-source voltage

VDSS

600

V

Drain-gate voltage (RGS = 20 kΩ)

VDGR

600

V

Gate-source voltage

VGSS

±30

V

(Note 1)

ID

10

Pulse (t = 1 ms) (Note 1)

IDP

40

Drain power dissipation (Tc = 25°C)

PD

45

W

Single pulse avalanche energy (Note 2)

EAS

363

mJ

Avalanche current

IAR

10

A

Repetitive avalanche energy (Note 3)

EAR

4.5

mJ

Channel temperature

Tch

150

°C

Storage temperature range

Tstg

-55~150

°C

DC Drain current

A 1: Gate 2: Drain 3: Source

JEDEC

JEITA

SC-67

TOSHIBA

2-10U1B

Weight : 1.7 g (typ.)

Thermal Characteristics Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Rth (ch-c)

2.78

°C/W

Thermal resistance, channel to ambient

Rth (ch-a)

62.5

°C/W

2

Note 1: Ensure that the channel temperature does not exceed 150℃. Note 2: VDD = 90 V, Tch = 25°C(initial), L = 6.36 mH, IAR = 10 A, RG = 25 Ω

1

Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 3

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2005-01-24


2SK3569 Electrical Characteristics (Ta = 25°C) Characteristics

Symbol

Typ.

Max

Unit

±10

µA

VGS = ±25 V, VDS = 0 V

V (BR) GSS

IG = ±10 µA, VDS = 0 V

±30

V

IDSS

VDS = 600 V, VGS = 0 V

100

µA

V

Drain cut-off current Drain-source breakdown voltage

Min

IGSS

Gate leakage current Gate-source breakdown voltage

Test Condition

V (BR) DSS

ID = 10 mA, VGS = 0 V

600

Vth

VDS = 10 V, ID = 1 mA

2.0

4.0

V

Drain-source ON resistance

RDS (ON)

VGS = 10 V, ID = 5 A

0.54

0.75

Forward transfer admittance

⎪Yfs⎪

VDS = 10 V, ID = 5 A

0.7

8.5

S

1500

15

180

VOUT

22

RL = 40 Ω

50

36

180

42

23

19

Gate threshold voltage

Input capacitance

Ciss

Reverse transfer capacitance

Crss

Output capacitance

Coss Rise time

VDS = 25 V, VGS = 0 V, f = 1 MHz

Turn-on time

ton

50 Ω

Switching time Fall time

ID = 5 A

10 V VGS 0V

tr

tf

Turn-off time

VDD ∼ − 200 V Duty < = 1%, tw = 10 µs

toff

Total gate charge

Qg

Gate-source charge

Qgs

Gate-drain charge

Qgd

VDD ∼ − 400 V, VGS = 10 V, ID = 10 A

pF

ns

nC

Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

(Note 1)

IDR

10

A

(Note 1)

IDRP

40

A

IDR = 10 A, VGS = 0 V

−1.7

V

Continuous drain reverse current Pulse drain reverse current Forward voltage (diode)

VDSF

Reverse recovery time

trr

IDR = 10 A, VGS = 0 V,

1300

ns

Qrr

dIDR/dt = 100 A/µs

16

µC

Reverse recovery charge

Marking

K3569

Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.

2

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2SK3569

ID – VDS

ID – VDS

8

COMMON SOURCE

20

5.3

6

5.1 5

10,8

4.8 6 4.6 4 4.4 4.2

2

8

10

Tc = 25°C PULSE TEST

DRAIN CURRENT ID (A)

DRAIN CURRENT ID (A)

10

6

COMMON SOURCE Tc = 25°C PULSE TEST

16 5.5

5.25 12 5 8

4.75 4.5

4

VGS = 4 V

VGS = 4V 0 0

2

4

6

8

DRAIN-SOURCE VOLTAGE

VDS

0 0

10

(V)

10

20

ID – VGS

VDS (V)

PULSE TEST

DRAIN-SOURCE VOLTAGE

DRAIN CURRENT ID (A)

VDS = 20 V

12

8 Tc = −55°C 100 25 0 0

2

4

6

8

GATE-SOURCE VOLTAGE

VGS

10

COMMON SOURCE Tc = 25℃ 8

PULSE TEST

6

ID = 10 A

4

5

2

2.5 0 0

4

Tc = −55°C 25 100

1 COMMON SOURCE VDS = 20 V PULSE TEST 10

DRAIN CURRENT ID

DRAIN-SOURCE ON RESISTANCE RDS (ON) (Ω)

FORWARD TRANSFER ADMITTANCE ⎪Yfs⎪ (S)

12

16

VGS

20

(V)

RDS (ON) – ID 10

1

8

GATE-SOURCE VOLTAGE

⎪Yfs⎪ – ID

0.1 0.1

(V)

10

(V)

100

10

VDS

50

VDS – VGS

COMMON SOURCE

4

40

DRAIN-SOURCE VOLTAGE

20

16

30

100

(A)

COMMON SOURCE Tc = 25°C PULSE TEST

1

0.1 0.1

VGS = 10 V、15V

1

10

DRAIN CURRENT ID

3

100

(A)

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2SK3569

RDS (ON) – Tc

IDR – VDS 100

COMMON SOURCE

DRAIN REVERSE CURRENT IDR (A)

PULSE TEST 2.0 ID = 10A 1.5 5A 2.5A

1.0 VGS = 10 V 0.5

0 −80

−40

0

40

80

CASE TEMPERATURE

120

Tc

COMMON SOURCE Tc = 25°C PULSE TEST 10

1 10 5

1 0.1 0

160

3

−0.2

(°C)

CAPACITANCE – VDS

−1.2

−1.0

VDS

(V)

Vth – Tc

GATE THRESHOLD VOLTAGE Vth (V)

(pF) CAPACITANCE C

−0.8

5 Ciss

1000 Coss 100

Crss 10 COMMON SOURCE VGS = 0 V f = 1 MHz Tc = 25°C 1 0.1

1

10

DRAIN-SOURCE VOLTAGE

3

2 COMMON SOURCE VDS = 10 V

1

ID = 1 mA PULSE TEST

0 −80

100

VDS

4

(V)

VDS (V) DRAIN-SOURCE VOLTAGE

60

40

20

80

120

CASE TEMPERATURE

0

40

80

120

Tc

160

(°C)

DYNAMIC INPUT / OUTPUT CHARACTERISTICS

80

40

−40

CASE TEMPERATURE

PD – Tc

DRAIN POWER DISSIPATION PD (W)

−0.6

−0.4

DRAIN-SOURCE VOLTAGE

10000

0 0

VGS = 0, −1 V

160

Tc

200

(°C)

500

400

20

VDS

16

12

300 400

VDD = 100 V

8

200 Common source VGS

100

200

Tc = 25°C

4

Pulse test 0 0

10

20

30

TOTAL GATE CHARGE

4

ID = 10 A

40

50

Qg

0 60

GATE-SOURCE VOLTAGE VGS (V)

DRAIN-SOURCE ON RESISTANCE RDS (ON) ( Ω)

2.5

(nC)

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2SK3569

NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c)

rth – tw 10

1

Duty=0.5 0.2

0.1

0.1 0.05 PDM

0.02

t 0.01

T

0.01

0.001 10μ

SINGLE PULSE

100μ

1m

Duty = t/T Rth (ch-c) = 2.78°C/W 10m

PULSE WIDTH

100m

tw

1

10

(s)

SAFE OPERATING AREA

EAS – Tch 500

100 ID max (PULSED) *

10

AVALANCHE ENERGY EAS (mJ)

DRAIN CURRENT ID (A)

100 µs * ID max (CONTINUOUS) *

1 ms *

1

0.1

DC OPERATION Tc = 25°C

LINEARLY

0.01 1

BE

WITH

DERATED

INCREASE

IN

200

100

50

75

125

150

VDSS max

TEMPERATURE.

10

100

CHANNEL TEMPERATURE (INITIAL) Tch (°C)

Tc=25℃ MUST

300

0 25

※ SINGLE NONREPETITIVE PULSE

CURVES

400

100

DRAIN-SOURCE VOLTAGE

15 V

1000

VDS

(V)

BVDSS IAR

−15 V VDD TEST CIRCUIT RG = 25 Ω VDD = 90 V, L = 6.36mH

5

VDS

WAVE FORM

Ε AS =

⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 − V DD ⎠ ⎝ VDSS

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2SK3569

RESTRICTIONS ON PRODUCT USE

030619EAA

• The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations.

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2sk3569