Global Power Discrete Market 2014-2018: New research report at SandlerResearch.org. Call at +1 888 391 5441 to purachse this report OR send an email on email@example.com with your contact details. Global Power Discrete market to grow at a CAGR of 8.43 percent over the period 20132018. One of the key factors contributing to this market growth is the high demand for discrete IGBTs. The Global Power Discrete market has also been witnessing the emerging market for SiC and GaN power semiconductors. However, the low demand due to global economic slowdown could pose a challenge to the growth of this market. Complete report of 72 Pages is available @ http://www.sandlerresearch.org/global-power-discrete-market-2014-2018.html. The emerging market for SiC and GaN power semiconductors is expected to drive the Global Power Discrete market during the forecast period. SiC power semiconductors comprise SiC MOSFET, SiC JFET, SiC BJT, and SiC Schottky diodes. Currently, SiC is widely used in the development of power semiconductors; however, GaN is a wide bandgap material that offers similar performance benefits to SiC but has greater cost-reduction potential, and the market for GaN power semiconductors is expected to grow rapidly in the coming years. In addition, GaN can be made available using existing silicon substrates, which can enable mass production and reduced cost. Power semiconductors using next-generation materials such as SiC and GaN are characterized to have lower energy loss, high-speed switching, and higher heat resistance than conventionally-used silicon. The adoption of SiC and GaN power semiconductors is expected to witness a significant increase, particularly in the EV/HEV and Industrial Motor Drive segments. According to the report, the growth of the Global Power Discrete market is driven by several factors, including the high demand for discrete IGBTs. Discrete IGBTs enable increased efficiency in electronic devices ranging from consumer electronics to several high power electronic applications. They play a major role in the technological advancement of power electronics. Further, the report states that the demand for power discrete semiconductors is dependent on the growth of various customer segments including the EV/HEV, Renewable Energy, Industrial Motor Drive, and LED Lighting segments. In recent years, the Industrial Motor Drive segment has been witnessing a slowdown because of several factors such as the sluggish economic recovery in the US, the natural disasters occurring in Japan, and the Eurozone debt crisis.
Global Power Discrete Market 2014-2018
Global Power Discrete Market 2014-2018, has been prepared based on an in-depth market analysis with inputs from industry experts. The report covers the EMEA and the APAC regions, and the Americas; it also covers the Global Power Discrete market landscape and its growth prospects in the coming years. The report also includes a discussion of the key vendors operating in this market. Key vendors dominating this space are Fairchild Semiconductor International Inc., Infineon Technologies AG, Mitsubishi Electric Corp, STMicroelectronics N.V., and Toshiba Corp. Other vendors mentioned in the report are Fuji Electric Co. Ltd., International Rectifier, ON Semiconductor Corp., Renesas Electronics Corp., and Vishay Intertechnology Inc. Inquiry Before Buying on this Report @ http://www.sandlerresearch.org/inquirebefore-buying?rname=13826. Key questions answered in this report:
What will the market size be in 2018 and what will the growth rate be? What are the key market trends? What is driving this market? What are the challenges to market growth? Who are the key vendors in this market space? What are the market opportunities and threats faced by the key vendors? What are the strengths and weaknesses of the key vendors?
Inquire for Discount @ http://www.sandlerresearch.org/discount?rname=13826. Table Of Contents 01. Executive Summary 02. List of Abbreviations 03. Scope of the Report 04. Market Research Methodology 05. Introduction 06. Market Landscape 07. Global Power Discrete Market Segmentation by Application 08. Global Power Discrete Market Segmentation by Product
Global Power Discrete Market 2014-2018
09. Global Power Discrete Market by Geographical Segmentation 10. Buying Criteria 11. Market Growth Drivers 12. Drivers and their Impact 13. Market Challenges 14. Impact of Drivers and Challenges 15. Market Trends 16. Trends and their Impact 17. Vendor Landscape 18. Key Vendor Analysis 18.1 Fairchild Semiconductor International Inc. 18.3 Mitsubishi Electric Corp.
18.2 Infineon Technologies AG
18.4 STMicroelectronics N.V.
18.5 Toshiba Corp.
19. Other Reports in this Series List of Exhibits:
Exhibit Exhibit Exhibit Exhibit Exhibit Exhibit Exhibit Exhibit Exhibit billion) Exhibit billion)
1: 2: 3: 4: 5: 6: 7: 8: 9:
Market Research Methodology Global Power Discrete Market Segmentation 2013 Global Power Discrete Market 2013-2018 (US$ billion) New Installation of Wind Converters by Geography 2013 Global Power Discrete market by Application segmentation 2013 Global Power Discrete market by Application segmentation 2013-2018 Global Renewable Energy Power Discrete market (US$ billion) Global EV/HEV Power Discrete Market 2013-2018 (US$ billion) Global Industrial Motor Drives Power Discrete Market 2013-2018 (US$
10: Global Industrial Motor Drives Power Discrete Market 2013-2018 (US$
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