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Application note for USB 3.1 Protected connection for mobile devices

A new technology delivering the ideal combination of low capacitance, high ESD robustness and low clamping voltage. Supporting high-speed data lines including USB3.1 at 10 Gbps. Protecting very sensitive system chips.

More information on the following pages and www.futurewafer.com.tw


Solution for USB 3.1 ESD Protection

USB 3.1 uses the two additional line pairs associated with USB 3.0, but at double the data rate of 10 Gbps. To meet the requirements for signal integrity, the capacitance of ESD protection devices needs to be even lower. USB 3-RX+/USB 3-TX+/-

Package

Body Size

Can be used for

Peak Pulse Current(A)8/20uS

ESD Contact (KV)

Capacitance VR=1.5V﹑Typ(pF)

# Protection Line

Device

DFN1006-2L

1.0X0.6

DFN1006-3L

1,0X0.6

DFN251010L

2.5X1.0

DFN412010L

4.1X2.0

DFN3810-9L

3.8X1.0

DFN551518L

5.5X1.5

TX +/FESD05BLCIS

1

0.2

20

5

RX +/D+/TX +/-

ESD3LCS

2

0.2

20

5

RX +/D+/TX +/-

FW0524LCS

4

0.2

20

5

RX +/D+/TX +/-

FW4120LCS

6

0.2

20

5

RX +/-

D+/TX +/FL3805CLS

8

0.2

20

5

RX +/D+/TX +/-

FL0518CLS

8

0.2

20

5

RX +/D+/-

USB 2-D+/-


ESD protection for the new Type-C connector …was introduced as a part of the new USB 3.1 specification. …will make USB 3.x very attractive for portable devices: Very small outline Connector can be plugged in using either orientation Higher charging currents possible Eliminates the need for a second data connector

High Speed Data Protection solution Part No.

Function

Protection Lines

FESD05BLCIS

ESD Protection

1/Bi-directional

FESD05LCDS

ESD Protection

1/Uni-directional

ESD3LCS

ESD Protection

2/Uni-directional

FW0524LCS

ESD Protection

4/Uni-directional

FW4120LCS

ESD Protection

6/Uni-directional

FL3805CLS

ESD Protection

8/Uni-directional

FL0518CLS

ESD Protection

8/Uni-directional

P4SMF series

SBU1/2,CC1/2 Part No.

Function

Protection Lines

400W(10/1000us),5V-64V

FESD05LCD

ESD Protection

1/Uni-directional

SOD-123FL

FESD05BLC

ESD Protection

1/Bi-directional

ESD3LC

ESD Protection

2/Uni-directional

FW0524LC

ESD Protection

4/Uni-directional


Optimizing ESD protection for USB 3.1 Device:FESD05BLCIS

Parameter Reverse Stand-off Voltage

Symbol

Condition

VRWM

Any I/O Pin to GND

Min.

Typ.

Max.

Units

5

V

9.6

V

IZ=1mA Reverse Breakdown Voltage

VBR

6.1 Any I/O Pin to GND.

Reverse Leakage Current Clamping Voltage Junction Capacitance

IR@VR=5V

Any I/O Pins to GND.

0.2

uA

VC

IPP=1A tp=8/20us IPP=4A,tp=8/20us

10 15

V

C I/O-I/O

Vdc=0V,f=1MHZ

0.2

0.25

pf

Typ.

Max.

Units

5

V

9.6

V

0.2

uA

1.15

V

10 15

V

Device:ESD3LCS

Parameter Reverse Stand-off Voltage

Symbol

Condition

VRWM

Any I/O Pin to GND

Min.

IZ=1mA Reverse Breakdown Voltage

VBR

6.1 Any I/O Pin to GND.

Reverse Leakage Current

IR@VR=5V

Any I/O Pins to GND. IF=15mA

Forward Voltage

VF GND to any I/O Pins

Clamping Voltage

VC

IPP=1A tp=8/20us IPP=4A,tp=8/20us

C I/O-GND Junction Capacitance

0.5

0.55

0.2

0.25

Vdc=0V,f=1MHZ C I/O-I/O

pf


Device:FW0524LCS

Parameter Reverse Stand-off Voltage

Symbol

Condition

VRWM

Any I/O Pin to GND

Min.

Typ.

Max.

Units

5

V

9.6

V

0.2

uA

1.15

V

10 15

V

IZ=1mA Reverse Breakdown Voltage

VBR

6.1 Any I/O Pin to GND.

Reverse Leakage Current

IR@VR=5V

Any I/O Pins to GND. IF=15mA

Forward Voltage

VF GND to any I/O Pins

Clamping Voltage

IPP=1A tp=8/20us IPP=4A,tp=8/20us

VC C I/O-GND

Junction Capacitance

0.5

0.55

0.2

0.25

Typ.

Max.

Units

5

V

9.6

V

0.2

uA

1.15

V

10 15

V

Vdc=0V,f=1MHZ

pf

C I/O-I/O

Device:FW4120LCS

Parameter Reverse Stand-off Voltage

Symbol

Condition

VRWM

Any I/O Pin to GND

Min.

IZ=1mA Reverse Breakdown Voltage

VBR

6.1 Any I/O Pin to GND.

Reverse Leakage Current

IR@VR=5V

Any I/O Pins to GND. IF=15mA

Forward Voltage

VF GND to any I/O Pins

Clamping Voltage

VC

IPP=1A tp=8/20us IPP=4A,tp=8/20us

C I/O-GND Junction Capacitance

0.5

0.55

0.2

0.25

Vdc=0V,f=1MHZ C I/O-I/O

pf


Device:FL3805CLS

Parameter Reverse Stand-off Voltage

Symbol

Condition

VRWM

Any I/O Pin to GND

Min.

Typ.

Max.

Units

5

V

9.6

V

0.2

uA

1.15

V

10 15

V

IZ=1mA Reverse Breakdown Voltage

VBR

6.1 Any I/O Pin to GND.

Reverse Leakage Current

IR@VR=5V

Any I/O Pins to GND. IF=15mA

Forward Voltage

VF GND to any I/O Pins

Clamping Voltage

IPP=1A tp=8/20us IPP=4A,tp=8/20us

VC C I/O-GND

Junction Capacitance

0.5

0.55

0.2

0.25

Vdc=0V,f=1MHZ

pf

C I/O-I/O

Device:FL0518CLS

Parameter

Reverse Stand-off Voltage

Symbol

Condition

VRWM

Any I/O Pin to GND

Min.

Typ.

Max.

Units

5

V

9.6

V

0.2

uA

1.15

V

10 15

V

IZ=1mA Reverse Breakdown Voltage

VBR

6.1 Any I/O Pin to GND.

Reverse Leakage Current

IR@VR=5V

Any I/O Pins to GND. IF=15mA

Forward Voltage

VF GND to any I/O Pins

Clamping Voltage

VC

IPP=1A tp=8/20us IPP=4A,tp=8/20us

C I/O-GND Junction Capacitance

0.5

0.55

0.2

0.25

Vdc=0V,f=1MHZ C I/O-I/O

pf


台灣未來芯航電 股份有限公司 桃園市 桃園區中正路987巷 50弄2號 +886-3-3573583 cherry@futurewafer.com.tw

造訪我們的網站: www.futurewafer.com.tw

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