Page 1

TIP120/TIP121/TIP122 NPN Epitaxial Darlington Transistor • Medium Power Linear Switching Applications • Complementary to TIP125/126/127

Equivalent Circuit C

B

TO-220

1

1.Base

2.Collector

R1

3.Emitter

R1 @ 8kW R2 @ 0.12k W

Absolute Maximum Ratings* Symbol VCBO

VCEO

R2 E

T a = 25°C unless otherwise noted

Collector-Base Voltage

Parameter : TIP120 : TIP121 : TIP122

Collector-Emitter Voltage : TIP120 : TIP121 : TIP122

Ratings 60 80 100

Units V V V

60 80 100

V V V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current (DC)

5

A

ICP

Collector Current (Pulse)

IB

Base Current (DC)

PC

8

A

120

mA W

Collector Dissipation (Ta=25°C)

2

Collector Dissipation (TC=25°C)

65

W

TJ

Junction Temperature

150

°C

TSTG

Storage Temperature

- 65 ~ 150

°C

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

© 2007 Fairchild Semiconductor Corporation TIP120/TIP121/TIP122 Rev. 1.0.0

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TIP120/TIP121/TIP122 — NPN Epitaxial Darlington Transistor

October 2008


Symbol VCEO(sus)

Parameter Collector-Emitter Sustaining Voltage : TIP120 : TIP121 : TIP122

ICEO

Collector Cut-off Current

ICBO

Collector Cut-off Current

Test Condition IC = 100mA, IB = 0

Min.

Typ.

Max.

60 80 100

Units V V V

: TIP120 : TIP121 : TIP122

VCE = 30V, IB = 0 VCE = 40V, IB = 0 VCE = 50V, IB = 0

0.5 0.5 0.5

mA mA mA

: TIP120 : TIP121 : TIP122

VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCB = 100V, IE = 0

0.2 0.2 0.2

mA mA mA

2

mA

2.0 4.0

V V

IEBO

Emitter Cut-off Current

VBE = 5V, IC = 0

hFE

* DC Current Gain

VCE = 3V,IC = 0.5A VCE = 3V, IC = 3A

VCE(sat)

* Collector-Emitter Saturation Voltage

IC = 3A, IB = 12mA IC = 5A, IB = 20mA

VBE(on)

* Base-Emitter On Voltage

VCE = 3V, IC = 3A

2.5

V

Cob

Output Capacitance

VCB = 10V, IE = 0, f = 0.1MHz

200

pF

1000 1000

* Pulse Test: Pulse Width£300ms, Duty Cycle£2%

© 2007 Fairchild Semiconductor Corporation TIP120/TIP121/TIP122 Rev. 1.0.0

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TIP120/TIP121/TIP122 — NPN Epitaxial Darlington Transistor

Electrical Characteristics* Ta=25°C unless otherwise noted


VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

10000

hFE, DC CURRENT GAIN

VCE = 4V

1000

100 0.1

1

3.5

IC = 250IB

3.0

2.5

2.0

1.5

1.0

VBE(sat)

VCE (sat)

0.5 0.1

10

IC[A], COLLECTOR CURRENT

1

10

IC[A], COLLECTOR CURRENT

Figure 1. DC current Gain

Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage

1000

10

IC[A], COLLECTOR CURRENT

Cib

10 0.1

1

10

100

1

0.1

0.01

VCB[V], COLLECTOR-BASE VOLTAGE VEB[V], EMITTER-BASE VOLTAGE

s 5m

Cob

s 1m

100

DC

Cob[pF] Cib[pF], CAPACITANCE

s 0m 10 ms 0 50

f=0.1MHz

TIP120 TIP121 TIP122

1

10

100

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 3. Output and Input Capacitance vs. Reverse Voltage

Figure 4. Safe Operating Area

80

PC[W], POWER DISSIPATION

70 60 50 40 30 20 10 0

0

25

50

75

100

125

150

175

o

TC[ C], CASE TEMPERATURE

Figure 5. Power Derating

© 2007 Fairchild Semiconductor Corporation TIP120/TIP121/TIP122 Rev. 1.0.0

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TIP120/TIP121/TIP122 — NPN Epitaxial Darlington Transistor

Typical characteristics


TIP120/TIP121/TIP122 — NPN Epitaxial Darlington Transistor

Mechanical Dimensions

TO220

© 2007 Fairchild Semiconductor Corporation TIP120/TIP121/TIP122 Rev. 1.0.0

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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification

Product Status

Definition

Advance Information

Formative or In Design

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I31

© 2008 Fairchild Semiconductor Corporation TIP120/TIP121/TIP122 Rev. A1

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TIP120/TIP121/TIP122 NPN Epitaxial Darlington Transistor

TRADEMARKS

Tip120, 122