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BC546B, BC547A, B, C, BC548B, C Amplifier Transistors NPN Silicon Features

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• Pb−Free Package is Available*

COLLECTOR 1 2 BASE

MAXIMUM RATINGS Rating

Symbol

Collector-Emitter Voltage

Value

VCEO BC546 BC547 BC548

Collector-Base Voltage

Vdc 65 45 30

MARKING DIAGRAM

VCBO BC546 BC547 BC548

Emitter-Base Voltage

Vdc TO−92 CASE 29 STYLE 17

80 50 30 VEBO

6.0

Vdc

Collector Current − Continuous

IC

100

mAdc

Total Device Dissipation @ TA = 25°C Derate above 25°C

PD

625 5.0

mW mW/°C

Total Device Dissipation @ TC = 25°C Derate above 25°C

PD

1.5 12

Watt mW/°C

TJ, Tstg

−55 to +150

°C

Operating and Storage Junction Temperature Range

3 EMITTER

Unit

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

1 2

BC 54xx YWW

3

BC54xx = Specific Device Code Y = Year WW = Work Week  = Pb−Free Package

ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet.

THERMAL CHARACTERISTICS Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Ambient

RJA

200

°C/W

Thermal Resistance, Junction−to−Case

RJC

83.3

°C/W

*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

 Semiconductor Components Industries, LLC, 2004

May, 2004 − Rev. 4

1

Publication Order Number: BC546/D


BC546B, BC547A, B, C, BC548B, C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (IC = 1.0 mA, IB = 0)

BC546 BC547 BC548

V(BR)CEO

65 45 30

− − −

− − −

V

Collector − Base Breakdown Voltage (IC = 100 Adc)

BC546 BC547 BC548

V(BR)CBO

80 50 30

− − −

− − −

V

Emitter − Base Breakdown Voltage (IE = 10 A, IC = 0)

BC546 BC547 BC548

V(BR)EBO

6.0 6.0 6.0

− − −

− − −

V

− − − −

0.2 0.2 0.2 −

15 15 15 4.0

nA

BC547A BC546B/547B/548B BC548C

− − −

90 150 270

− − −

(IC = 2.0 mA, VCE = 5.0 V)

BC546 BC547 BC548 BC547A BC546B/547B/548B BC547C/BC548C

110 110 110 110 200 420

− − − 180 290 520

450 800 800 220 450 800

(IC = 100 mA, VCE = 5.0 V)

BC547A/548A BC546B/547B/548B BC548C

− − −

120 180 300

− − −

− − −

0.09 0.2 0.3

0.25 0.6 0.6

0.7

0.55 −

− −

0.7 0.77

150 150 150

300 300 300

− − −

Collector Cutoff Current (VCE = 70 V, VBE = 0) (VCE = 50 V, VBE = 0) (VCE = 35 V, VBE = 0) (VCE = 30 V, TA = 125°C)

ICES BC546 BC547 BC548 BC546/547/548

A

ON CHARACTERISTICS DC Current Gain (IC = 10 A, VCE = 5.0 V)

hFE

Collector − Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) (IC = 100 mA, IB = 5.0 mA) (IC = 10 mA, IB = See Note 1)

VCE(sat)

Base − Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)

VBE(sat)

Base − Emitter On Voltage (IC = 2.0 mA, VCE = 5.0 V) (IC = 10 mA, VCE = 5.0 V)

VBE(on)

V

V V

SMALL−SIGNAL CHARACTERISTICS Current − Gain − Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 100 MHz)

fT BC546 BC547 BC548

MHz

Output Capacitance (VCB = 10 V, IC = 0, f = 1.0 MHz)

Cobo

1.7

4.5

pF

Input Capacitance (VEB = 0.5 V, IC = 0, f = 1.0 MHz)

Cibo

10

pF

125 125 125 240 450

− − 220 330 600

500 900 260 500 900

− − −

2.0 2.0 2.0

10 10 10

Small − Signal Current Gain (IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz)

Noise Figure (IC = 0.2 mA, VCE = 5.0 V, RS = 2 k, f = 1.0 kHz, f = 200 Hz)

hfe BC546 BC547/548 BC547A BC546B/547B/548B BC547C/548C

NF BC546 BC547 BC548

1. IB is value for which IC = 11 mA at VCE = 1.0 V.

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dB


BC546B, BC547A, B, C, BC548B, C BC547/BC548 1.0 VCE = 10 V TA = 25°C

1.5

TA = 25°C

0.9 0.8 V, VOLTAGE (VOLTS)

hFE , NORMALIZED DC CURRENT GAIN

2.0

1.0 0.8 0.6 0.4

VBE(sat) @ IC/IB = 10

0.7 VBE(on) @ VCE = 10 V

0.6 0.5 0.4 0.3 0.2

0.3

VCE(sat) @ IC/IB = 10

0.1 0.2

0.2

0.5

50 1.0 20 2.0 5.0 10 IC, COLLECTOR CURRENT (mAdc)

100

0 0.1

200

0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc)

Figure 2. “Saturation” and “On” Voltages

2.0

θVB, TEMPERATURE COEFFICIENT (mV/ °C)

VCE , COLLECTOR−EMITTER VOLTAGE (V)

Figure 1. Normalized DC Current Gain

TA = 25°C 1.6 IC = 200 mA 1.2 IC = IC = 10 mA 20 mA

IC = 50 mA

IC = 100 mA

0.8

0.4

0

0.02

10

1.0 0.1 IB, BASE CURRENT (mA)

1.0 −55°C to +125°C 1.2 1.6 2.0 2.4 2.8

20

f, T CURRENT−GAIN − BANDWIDTH PRODUCT (MHz)

C, CAPACITANCE (pF)

TA = 25°C Cib

3.0 Cob 2.0

1.0

0.4 0.6 0.8 1.0

2.0 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS)

20

100

Figure 4. Base−Emitter Temperature Coefficient

10

5.0

10 1.0 IC, COLLECTOR CURRENT (mA)

0.2

Figure 3. Collector Saturation Region

7.0

50 70 100

40

Figure 5. Capacitances

400 300 200

VCE = 10 V TA = 25°C

100 80 60 40 30 20 0.5 0.7

1.0

2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc)

30

Figure 6. Current−Gain − Bandwidth Product

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50


BC546B, BC547A, B, C, BC548B, C BC546

TA = 25°C

VCE = 5 V TA = 25°C

0.8 V, VOLTAGE (VOLTS)

hFE , DC CURRENT GAIN (NORMALIZED)

1.0

2.0 1.0 0.5

VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 5.0 V 0.4

0.2

0.2

VCE(sat) @ IC/IB = 10 0

10 100 1.0 IC, COLLECTOR CURRENT (mA)

0.1 0.2

0.2

0.5

1.0

2.0 TA = 25°C 1.6 20 mA

50 mA

100 mA

200 mA

1.2 IC = 10 mA

0.8

0.4

0

0.02

0.05

0.1

0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA)

5.0

10

20

20 Cib 10 6.0 Cob

0.2

0.5

5.0 1.0 2.0 10 20 VR, REVERSE VOLTAGE (VOLTS)

50

100

200

−1.4

−1.8 VB for VBE

50

−55°C to 125°C

−2.2

−2.6

−3.0

f, T CURRENT−GAIN − BANDWIDTH PRODUCT

C, CAPACITANCE (pF)

TA = 25°C

0.1

200

0.2

0.5

10 20 5.0 1.0 2.0 IC, COLLECTOR CURRENT (mA)

Figure 10. Base−Emitter Temperature Coefficient

40

2.0

100

−1.0

Figure 9. Collector Saturation Region

4.0

50

Figure 8. “On” Voltage

θVB, TEMPERATURE COEFFICIENT (mV/ °C)

VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 7. DC Current Gain

10 20 2.0 5.0 IC, COLLECTOR CURRENT (mA)

500

VCE = 5 V TA = 25°C

200 100 50 20

1.0 5.0 10 50 100 IC, COLLECTOR CURRENT (mA)

100

Figure 11. Capacitance

Figure 12. Current−Gain − Bandwidth Product

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BC546B, BC547A, B, C, BC548B, C DEVICE ORDERING INFORMATION Device

Package

Shipping†

BC546B

5000 Units / Bulk

BC546BRL1

2000 Tape & Reel

BC546BZL1

2000 Tape & Ammo Box

BC547ARL

2000 Tape & Reel

BC547ARL1

2000 Tape & Reel

BC547AZL1

2000 Tape & Ammo Box

BC547B

5000 Units / Bulk TO−92 (TO−226)

BC547BRL1

2000 Tape & Reel

BC547BZL1

2000 Tape & Ammo Box

BC547C

5000 Units / Bulk 2000 Tape & Ammo Box

BC547CZL1 BC548B

5000 Units / Bulk

BC548BRL1

2000 Tape & Reel

BC548BZL1 BC548BZL1G

TO−92 (TO−226) (Pb−Free)

BC548C BC548CZL1

2000 Tape & Ammo Box

5000 Units / Bulk TO 92 (TO TO−92 (TO−226) 226)

2000 Tape & Ammo Box

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

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BC546B, BC547A, B, C, BC548B, C PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AL

A

NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.

B

R P L SEATING PLANE

K

D

X X G

J

H V

C SECTION X−X

1

N

DIM A B C D G H J K L N P R V

INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−−

MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−−

STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER

N

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com

N. American Technical Support: 800−282−9855 Toll Free USA/Canada

ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder

Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850

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For additional information, please contact your local Sales Representative.

BC546/D


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