Page 1

MITSUBISHI TRANSISTOR MODULES

QM600HD-M HIGH POWER SWITCHING USE NON-INSULATED TYPE

QM600HD-M

• • • •

IC Collector current ........................ 600A VCEX Collector-emitter voltage ........... 350V hFE DC current gain............................. 500 Non-Insulated Type

APPLICATION Robotics, Forklifts, Welders

OUTLINE DRAWING & CIRCUIT DIAGRAM

Dimensions in mm

94 φ5.5

C

E

48

B 62

E

22

20

80

E

8 B

17

BX

E BX

14

12

22

25

M4

5.5

8

21

LABEL

27

M6

25

64

Feb.1999


MITSUBISHI TRANSISTOR MODULES

QM600HD-M HIGH POWER SWITCHING USE NON-INSULATED TYPE

ABSOLUTE MAXIMUM RATINGS Symbol

(Tj=25°C, unless otherwise noted) Ratings

Unit

VCEX (SUS)

Collector-emitter voltage

IC=1A, VEB=2V

Conditions

350

V

VCEX

Collector-emitter voltage

VEB=2V

350

V

VCBO

Collector-base voltage

Emitter open

400

V

VEBO

Emitter-base voltage

Collector open

10

V

IC

Collector current

DC

600

A

–IC

Collector reverse current

DC (forward diode current)

PC

Collector dissipation

TC=25°C

IB

Base current

–ICSM

Surge collector reverse current (forward diode current)

Tj Tstg Viso

Isolation voltage

Parameter

A

2080

W

DC

15

A

Peak value of one cycle of 60Hz (half wave)

A

Junction temperature

–40~+150

°C

Storage temperature

–40~+125

°C

Charged part to case, AC for 1 minute Main terminal screw M6

Mounting screw M5 —

Mounting torque B(E) terminal screw M4

BX terminal screw M4 —

Typical value

Weight

ELECTRICAL CHARACTERISTICS

V

1.96~2.94

N·m

20~30

kg·cm

1.47~1.96

N·m

15~20

kg·cm

0.98~1.47

N·m

10~15

kg·cm

0.98~1.47

N·m

10~15

kg·cm

420

g

(Tj=25°C, unless otherwise noted) Limits

Symbol

Test conditions

Parameter

Min.

Typ.

Max.

Unit

ICEX

Collector cutoff current

VCE=350V, VEB=2V

2.0

mA

ICBO

Collector cutoff current

VCB=400V, Emitter open

2.0

mA

IEBO

Emitter cutoff current

VEB=10V

800

mA

VCE (sat)

Collector-emitter saturation voltage

2.0

V

VBE (sat)

Base-emitter saturation voltage

2.5

V

–VCEO

Collector-emitter reverse voltage

–IC=600A (diode forward voltage)

V

hFE

DC current gain

IC=600A, VCE=2V

500

3.0

µs

Switching time

VCC=200V, IC=600A, IB1=2A, –IB2=4A

15

µs

3.0

µs

Transistor part

0.06

°C/ W

Diode part

°C/ W

Conductive grease applied

0.05

°C/ W

IC=600A, IB=1.2A

ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f)

Thermal resistance (junction to case) Contact thermal resistance (case to fin)

Feb.1999


MITSUBISHI TRANSISTOR MODULES

QM600HD-M HIGH POWER SWITCHING USE NON-INSULATED TYPE

PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL)

DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL)

1000 1.0A

DC CURRENT GAIN hFE

IB=2.0A

800

0.4A 600

0.2A

400

0.08A

200

0

0

1

2

3

4

COLLECTOR-EMITTER VOLTAGE

10 –1 7 5 4 3 2 1.4

1.6

1.8

2.0

BASE-EMITTER VOLTAGE

2.2

10 1 7 5 4 3 2 10 0 7 5 4 3 2

VCE(sat)

10 –1 10 1

IC=600A 2

1 IC=400A

0 10 –2 2 3 4 5 710 –1 2 3 4 5 7 10 0 2 3 4 5 7 10 1

BASE CURRENT IB (A)

IB=1.2A Tj=25°C Tj=125°C 2 3 4 5 7 10 2

2 3 4 5 7 10 3

SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL)

ton, ts, tf (µs)

3

2 3 4 5 7 10 3

COLLECTOR CURRENT IC (A)

SWITCHING TIME

COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)

Tj=25°C Tj=125°C

710 2

VBE(sat)

VBE (V)

5

IC=200A

2 3 45

SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)

COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL)

4

VCE=2.0V Tj=25°C Tj=125°C

COLLECTOR CURRENT IC (A)

VCE (sat), VBE (sat) (V)

BASE CURRENT IB (A)

VCE=2.0V Tj=25°C

10 –2 1.2

10 3 7 5 4 3 2

VCE (V)

COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 0 7 5 4 3 2

10 4 7 5 4 3 2

10 2 10 1

5

SATURATION VOLTAGE

COLLECTOR CURRENT IC (A)

Tj=25°C

10 2 7 5 3 2 10 1 ts 7 5 3 2

VCC=200V IB1=2.0A –IB2=4.0A

tf

10 0 Tj=25°C ton 7 Tj=125°C 5 3 2 10 –1 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 2 3 4 5 7 10 4

COLLECTOR CURRENT

IC (A)

Feb.1999


MITSUBISHI TRANSISTOR MODULES

QM600HD-M HIGH POWER SWITCHING USE NON-INSULATED TYPE

SWITCHING TIME VS. BASE CURRENT (TYPICAL)

REVERSE BIAS SAFE OPERATING AREA 2000 COLLECTOR CURRENT IC (A)

SWITCHING TIME

ts, tf (µs)

3 2 ts 10 1 7 5 4 3 2 10 0 7 5 4 3

tf VCC=200V IB1=2A IC=600A Tj=25°C Tj=125°C 3 4 5 7 10 0

2 3 4 5 7 10 1

1600 1400 1200

BASE REVERSE CURRENT –IB2 (A)

600 400 200 200

300

400

500 VCE (V)

DERATING FACTOR OF F. B. S. O. A.

s 1m s m

10

C TC =25°C NON–REPETITIVE

SECOND BREAKDOWN AREA

80 70 60 50

COLLECTOR DISSIPATION

40 30 20 10

10 1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR-EMITTER VOLTAGE

DERATING FACTOR (%)

tw=100µs

D

COLLECTOR CURRENT IC (A)

100

90

10 2 7 5 3 2

0

COLLECTOR-EMITTER VOLTAGE

100

10 3 7 5 3 2

6A

800

FORWARD BIAS SAFE OPERATING AREA 10 4 7 5 3 2

–IB2=4A

1000

0

2 3

Tj=125°C

1800

VCE (V)

0

0

20

40

60

80 100 120 140 160

CASE TEMPERATURE

TC (°C)

TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 4 5 7 10 1 2 3 0.08 0.07

Zth (j–c) (°C/ W)

0.06 0.05 0.04 0.03 0.02 0.01 0 10 –3 2 3 4 5 710 –2 2 3 4 5 710 –1 2 3 4 5 7 10 0 TIME (s)

Feb.1999

Datesheet QM600HD-M  

Datesheet QM600HD-M

Read more
Read more
Similar to
Popular now
Just for you