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2-Pack IGBT 1400V 300A

2MBI 300P-140 n Outline Drawing

IGBT MODULE ( P-Series ) n Features • Square SC SOA at 10 x IC • Simplified Parallel Connection • Narrow Distribution of Characteristics • High Short Circuit Withstand-Capability

n Applications • High Power Switching • A.C. Motor Controls • D.C. Motor Controls • Uninterruptible Power Supply

n Maximum Ratings and Characteristics

n Equivalent Circuit

• Absolute Maximum Ratings Items Collector-Emitter Voltage Gate -Emitter Voltage

Collector Current

Max. Power Dissipation Operating Temperature Storage Temperature Isolation Voltage Screw Torque

( Tc=25°C) Symbols VCES VGES Continuous TC=25°C IC Continuous TC=80°C 1ms TC=25°C IC PULSE 1ms TC=80°C -IC 1ms -IC PULSE PC Tj Tstg A.C. 1min. Vis Mounting *1 Terminals *2

Ratings 1400 ± 20 400 300 800 600 300 600 2500 +150 -40 ∼ +125 2500 3.5 4.5

Units V V

A

W °C °C V Nm

Note: *1:Recommendable Value; 2.5 ∼ 3.5 Nm (M5) or (M6) *2:Recommendable Value; 3.5 ∼ 4.5 Nm (M6)

• Electrical Characteristics

( at Tj=25°C )

Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage

Symbols ICES IGES VGE(th)

Collector-Emitter Saturation Voltage

VCE(sat)

Input capacitance Output capacitance Reverse Transfer capacitance

Cies Coes Cres tON tr tOFF tf VF trr

Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time

Test Conditions VGE=0V VCE=1400V VCE=0V VGE=± 20V VGE=20V IC=300mA Tj= 25°C VGE=15V IC=300A Tj=125°C VGE=15V IC=300A VGE=0V VCE=10V f=1MHz VCC=600V IC=300A VGE=± 15V RG=2.7Ω IF=300A VGE=0V IF=300A

Min.

Typ.

6.0

8.0 2.7 3.3 30000 4500 2000

2.4

Max. 3.0 600 9.0 3.0

Units mA µA V V pF

1.2 0.6 1.0 0.3 3.3 350

µs V ns

• Thermal Characteristics Items Thermal Resistance

Symbols Rth(j-c) Rth(j-c) Rth(c-f)

Test Conditions IGBT Diode With Thermal Compound

Min.

Typ.

0.0167

Max. 0.05 0.10

Units °C/W


2-Pack IGBT 1400V 300A

2MBI 300P-140 Collector Current vs. Collector-Emitter Voltage

Collector Current vs. Collector-Emitter Voltage

T j= 2 5 ° C

800

[A]

[A]

V G E= 2 0 V 1 5 V

V GE= 2 0 V

15V

600

C

C

600

Collector Current : I

12V

Collector Current : I

T j= 1 2 5 ° C

800

400 11V 200

12V 400 11V 200

10V

10V 0

0 0

1

2 3 4 5 Collector-Emitter Voltage : V CE [V]

6

Collector-Emitter vs. Gate-Emitter Voltage T j= 1 2 5 ° C

[V]

6

10

CE

[V]

10

Collector Emitter Voltage : V

8

6

4 IC= 6 0 0 A IC= 3 0 0 A

2

IC= 1 5 0 A

8

6 IC= 6 0 0 A 4 IC= 3 0 0 A 2

IC= 1 5 0 A

0 5

10 15 20 Gate-Emitter Voltage : V G E [V]

25

0

5

10 15 20 Gate-Emitter Voltage : V G E [V]

25

Switching Time vs. Collector Current

Switching Time vs. Collector Current

V CC = 6 0 0 V , R G=2,7 Ω , V GE = ± 1 5 V , T j= 2 5 ° C

V CC = 6 0 0 V , R G =2,7 Ω , V GE = ± 1 5 V , T j= 1 2 5 ° C

, t r, t off , t f [nsec]

0

t on

1000

tr

t on tr

1000

t off

Switching Time : t

on

t off

on

, t r, t off , t f [nsec]

2 3 4 5 Collector-Emitter Voltage : V CE [V]

T j= 2 5 ° C

0

Switching Time : t

1

Collector-Emitter vs. Gate-Emitter Voltage

CE

Collector Emitter Voltage : V

0

100 tf

10

tf

100

10 0

200

400

Collector Current: I C (A)

600

0

200

400

Collector Current: I C (A)

600


2-Pack IGBT 1400V 300A

2MBI 300P-140 Switching Time vs. R G

Collector Current vs. Collector-Emitter Voltage

V CC =600V, I C =300A, V GE = ± 1 5 V , T j= 2 5 ° C

T j= 2 5 ° C 1000

Collector-Emitter-Voltage : V

t off

tf

100

20

600

15

400

10

200

5

10 1

0

10

0

500

Gate Resistance : R G [ Ω ]

Reverse Recovery Characteristics trr , I rr vs. I F

V G E= 0 V

trr = 1 2 5 ° C

rr

400

200

Reverse Recovery Time : t

Reverse Recovery Current : I

Forward Current : I

[nsec]

rr

25°C

F

[A]

[A]

1000

T j= 1 2 5 ° C

600

0 2000

1500

G a t e C h a r g e : Q g (nC)

Forward Voltage vs. Forward Current 800

1000

[V]

800

GE

[V]

tr 1000

V CC =400, 600, 800V

GE

Switching Time : t ,on t ,r t ,off t f [nsec]

t on

25

Gate-Emitter Voltage : V

10000

0

trr = 2 5 ° C 100

I rr= 1 2 5 ° C I rr = 2 5 ° C

10 0

1

2

3

4

0

200

Forward Voltage : V F [V]

400

600

Forward Current : I F [A]

Reverse Biased Safe Operating Area + V G E=15V, -V G E ≤ 15V, T j≤ 125°C, R G ≥ 2,7 Ω

Transient Thermal Resistance

-1

FWD IGBT

10

(non-repetitive pulse)

3000

C

10

[A]

SCSOA

Collector Current : I

Thermal Resistance : R

th(j-c)

[°C/W]

4000

-2

2000

1000

RBSOA (Repetitive pulse) 10

0

-3

10

-3

10

-2

10

-1

Pulse Width : P W [sec]

10

0

0

200

400

600

800

1000

1200

Collector-Emitter Voltage : V CE [V]

1400

1600


2-Pack IGBT 1400V 300A

2MBI 300P-140

Capacitance vs. Collector-Emitter Voltage

Switching Loss vs. Collector Current

, C oes , C res [nF]

E on 1 2 5 ° C 100

C ies 10

ies

E on 25°C

50

Capacitance: C

Switching Loss : E

T j= 2 5 ° C

100

on

, E off , E rr [mJ/cycle]

V CC = 6 0 0 V , R G=2,7 Ω , V GE = ± 1 5 V

E off 1 2 5 ° C E off 2 5 ° C E rr 1 2 5 ° C E rr

25°C

C oes C res

1

0,1

0 0

100

200 300 400 Collector Current : I C [A]

500

600

0

5

10 15 20 25 30 Collector Emitter Voltage : V CE [V]

35


For more information, contact: Collmer Semiconductor, Inc. P.O. Box 702708 Dallas, TX 75370 972-233-1589 972-233-0481 Fax http://www.collmer.com


This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.

Datasheet 2MBI300P-140  

2MBI300P-140

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