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n Outline Drawing

IGBT MODULE ( N series ) n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (~3 Times Rated Current)

n Applications • High Power Switching • A.C. Motor Controls • D.C. Motor Controls • Uninterruptible Power Supply

n Equivalent Circuit

n Maximum Ratings and Characteristics • Absolute Maximum Ratings Items Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Max. Power Dissipation Operating Temperature Storage Temperature Isolation Voltage Screw Torque

( Tc=25°C) Symbols VCES VGES Continuous IC 1ms IC PULSE Continuous -IC 1ms -IC PULSE PC Tj Tstg A.C. 1min. Vis Mounting *1 Terminals *1

Ratings 600 ± 20 200 400 200 400 780 +150 -40 ∼ +125 2500 3.5 3.5

Units V V A W °C °C V Nm

Note: *1:Recommendable Value; 2.5 ∼ 3.5 Nm (M5)

• Electrical Characteristics Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time

( at Tj=25°C ) Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres tON tr tOFF tf VF trr

Test Conditions VGE=0V VCE=600V VCE=0V VGE=± 20V VGE=20V IC=200mA VGE=15V IC=200A VGE=0V VCE=10V f=1MHz VCC=300V IC=200A VGE=± 15V RG=9.1Ω IF=200A VGE=0V IF=200A

Min.

Symbols Rth(j-c) Rth(j-c) Rth(c-f)

Test Conditions IGBT Diode With Thermal Compound

Min.

Typ.

4.5 13200 2930 1330 0.6 0.2 0.6 0.2

Max. 2.0 30 7.5 2.8

Units mA µA V V pF

1.2 0.6 1.0 0.35 3.0 300

µs V ns

• Thermal Characteristics Items Thermal Resistance

Typ.

0.025

Max. 0.16 0.35

Units °C/W


Collector current vs. Collector-Emitter voltage

Collector current vs. Collector-Emitter voltage

T j=125°C

T j=25°C 500

500 V GE =20V,15V,12V

V GE =20V,15V,12V 400 C

300

Collector current : I

Collector current : I

C

[A]

[A]

400

10V

200

100

300

10V

200

100 8V 8V

0

0 0

1

2

3

4

5

6

0

3

4

5

6

Collector-Emitter vs. Gate-Emitter voltage

Collector-Emitter vs. Gate-Emitter voltage

T j=25°C

T j=125°C

CE

[V]

10

[V]

8

Collector-Emitter voltage : V

CE

Collector-Emitter voltage : V

2

Collector-Emitter voltage : V CE [V]

10

6

IC=

4

400A 200A 100A

2

0

8

6

IC=

4

400A 200A

2

100A 0

0

5

10

15

20

25

0

Gate-Emitter voltage : V GE [V]

5

10

15

20

25

Gate-Emitter voltage : V GE [V]

Switching time vs. Collector current

Switching time vs. Collector current

V CC =300V, R G =9.1 Ω , V GE =±15V, T j=25°C

V CC =300V, R G =9.1 Ω , V GE =±15V, Tj=125°C 1000

, t r , t off , t f [nsec]

t on t off tr

on

tf

tr tf

100

Switching time : t

Switching time : t

100

t off t on

, t r , t off , t f [nsec]

1000

on

1

Collector-Emitter voltage : V CE [V]

10

10 0

100

200

Collector current : I C [A]

300

0

100

200

Collector current : I C [A]

300


Switching time vs. R G

Dynamic input characteristics T j=25°C

V CC =300V, I C =200A, V GE =±15V, T j=25°C

CE

tr

Collector-Emitter voltage : V

Switching time : t

[V]

t on t off

1000

tf

on

, t r , t off , t f [nsec]

500

100

10

25 V CC =200V

400

300V 20 400V

300

15

200

10

100

5

0 1200

0 1

10

0

200

400

600

800

1000

Gate resistance : R G [ Ω ]

Gate charge : Q G [nC]

Forward current vs. Forward voltage

Reverse recovery characteristics

V GE = O V

t rr , I rr vs. I F

T j=125°C 25°C rr

[A]

[A]

400

rr [nsec]

500

I rr 125°C

200

100

:t

100 I rr 25°C

Reverse recovery time

Reverse recovery current : I

Forward current : I

F

t rr 125°C 300

0

t rr 25°C

10 0

1

2

3

4

0

100

200

300

Forward voltage : V F [V]

Forward current : I F [A]

Transient thermal resistance

+V GE =15V, -V GE <15V, T j<125°C, R G >9.1 Ω

Reversed biased safe operating area 2000

[A]

1600

C

IGBT 0,1

Collector current : I

Thermal resistance : R

th(j-c)

[°C/W]

Diode

SCSOA

1200

(non-repetitive pulse)

800

400 0,01 RBSOA (Repetitive pulse) 0 0,001

0,01

0,1

Pulse width : PW [sec]

1

0

100

200

300

400

500

Collector-Emitter voltage : V CE [V]

600


Capacitance vs. Collector-Emitter voltage

Switching loss vs. Collector current

T j=25°C

V CC=300V, R G =9.1 Ω , V GE =±15V

, C oes , C res [nF]

E off 125°C 15 E off 25°C

E on 125°C E on 25°C 5 E rr 125°C E rr 25°C

0 0

100

200

300

C ies

10

ies

10

Capacitance : C

Switching loss : E

on

, E off , E rr [mJ/cycle]

20

400

C oes 1 C res

0

Collector Current : I C [A]

5

10

15

20

25

30

35

Collector-Emitter Voltage : V CE [V]

Fuji Electric GmbH

Fuji Electric (UK) Ltd.

Lyoner Straße 26

Commonwealth House 2 Chalkhill Road Hammersmith

D-60528 Frankfurt/M

London W6 8DW, UK

Tel.: 069 - 66 90 29 - 0 Fax.: 069 - 66 90 29 - 56

Tel.: 0181 - 233 11 30 Fax.: 0181 - 233 11 60

Specification is subject to change without notice

May 97


This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.


2MBI200N-060