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SKM 75GD123D - 2 34 5*     '

Absolute Maximum Ratings Symbol Conditions IGBT *6

-7 2 34 5*

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-7 2 /49 5*

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1

- 2 ;9 5*

49

1

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449

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5*

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IGBT Modules SKM 75GD123DL



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SKM 75GD123D

Module

SKM 75GDL123D

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-7 2 /49 5*

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Typical Applications*      

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- 2 34 5*     '

Characteristics Symbol Conditions IGBT =6 

=6 2 *6 %* 2 3 1

%*6

=6 2 9  *6 2 *6

*69 *6 *6   * *

=6 2 /4  %*  2 49 1 =6 2 /4  *6 2 34 =6 2 9 

min.

typ.

max.

Units

D4

44

#4



-7 2 34 5*

9D

/3

1

-7 2 34 5*

/D

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-7 2 /34 5*

/#

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-7 2 345*

33

3;

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-7 2 5* C

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1

1* /  C

<= 2 33 F <='' 2 33 F

6''

GD

Units

- 2 34 5*

=6

SEMITRANSÂŽ 6

Values

** 2 #99 %*2 491 -7 2 /34 5* =6 2 > /4

499 /99

4

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H 903

IJK

GDL

13-01-2009 NOS

Š by SEMIKRON


SKM 75GD123D Characteristics Symbol Conditions Inverse Diode ( 2 6*

%(  2 49 1? =6 2 9 

(9

min.

typ.

max.

Units

-7 2 34 5* C

3

34



-7 2 /34 5* C

/;

-7 2 34 5*

//

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-7 2 /34 5* (

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SEMITRANS 6 IGBT Modules



-7 2 34 5*

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3#

-7 2 /34 5* %<< L

%( 2 49 1 J 2 ;99 1JB

6

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-7 2 /34 5*

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1 B*

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H 9#

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994

IJK

Module SKM 75GD123DL SKM 75GD123D SKM 75GDL123D

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Features                                     

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This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal.

Typical Applications*      

  +*    "   -     ' 1* 

          '   

GD

2

GDL

13-01-2009 NOS

Š by SEMIKRON


SKM 75GD123D Zth Symbol Zth(j-c)l

Conditions

Values

Units

< < < <

 

 

 

2/ 23 20 2D 2/ 23 20

3D9 #; .3 3; 99# 9933; 999/0

MJK MJK MJK MJK   

 

2D

99993



SKM 75GD123D

< < < <

 

 

 

2/ 23 20 2D 2/ 23 20

D99 /#; 3; D 99;0/ 99//3 999/0

MJK MJK MJK MJK   

SKM 75GDL123D

 

2D

99;

SEMITRANS® 6

Zth(j-c)D

IGBT Modules SKM 75GD123DL



Features                                

      

 !     "  

    # $ % 

  & '  ( ) '   *   %  

 "     +*, + ,   - 

    .         /0 

Typical Applications*      

  +*    "   -     ' 1* 

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GD

3

GDL

13-01-2009 NOS

© by SEMIKRON


SKM 75GD123D

Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'

Fig. 2 Rated current vs. temperature IC = f (TC)

Fig. 3 Typ. turn-on /-off energy = f (IC)

Fig. 4 Typ. turn-on /-off energy = f (RG)

Fig. 5 Typ. transfer characteristic

Fig. 6 Typ. gate charge characteristic

4

13-01-2009 NOS

Š by SEMIKRON


SKM 75GD123D

Fig. 7 Typ. switching times vs. IC

Fig. 8 Typ. switching times vs. gate resistor RG

Fig. 9 Transient thermal impedance

Fig. 10 CAL diode forward characteristic

Fig. 11 Typ. CAL diode peak reverse recovery current

Fig. 12 Typ. CAL diode peak reverse recovery charge

5

13-01-2009 NOS

Š by SEMIKRON


SKM 75GD123D UL Recognized

File 63 532

* + 4#

* + #:

6

=+

* + :0

13-01-2009 NOS

=+

© by SEMIKRON


Modulo IGBT SEMIKRON SKM 75GD123D